公开(公告)号：US20250105023A1

公开(公告)日：2025-03-27

申请号：US18817372

申请日：2024-08-28

Applicant: Kioxia Corporation

Inventor： Shunichi YONEDA ,  Kazuhiro MATSUO ,  Masaya TODA ,  Kota TAKAHASHI ,  Masaya NAKATA ,  Kenichiro TORATANI ,  Ha HOANG ,  Takuma DOI ,  Wakako MORIYAMA

IPC: H01L21/46 ,  C23C8/12

Abstract: A manufacturing method includes loading a substrate into a chamber, the substrate including oxide semiconductor; configuring a temperature in the chamber to a first temperature; supplying an oxidizing gas into the chamber; lowering the temperature in the chamber from the first temperature; stopping supplying the oxidizing gas into the chamber after lowering the temperature; and unloading the substrate from the chamber after the temperature in the chamber reaches a second temperature lower than the first temperature.

公开(公告)号：US20240324170A1

公开(公告)日：2024-09-26

申请号：US18589286

申请日：2024-02-27

Applicant: Kioxia Corporation

Inventor： Masaya TODA ,  Kazuhiro MATSUO ,  Ha HOANG ,  Kota TAKAHASHI ,  Kenichiro TORATANI ,  Wakako MORIYAMA

IPC: H10B12/00

CPC classification number: H10B12/05 ,  H10B12/33

Abstract: A semiconductor device manufacturing method includes transferring a substrate including a structure that has a first surface at which indium is exposed, and a second surface at which a metal is exposed, to a chamber of a film forming device, supplying an indium reducing gas to the chamber at a first temperature at which indium is able to transition to a gaseous state, and supplying a film forming gas to the chamber at a second temperature higher than the first temperature to form a first film on the first surface and the second surface, after supplying the reducing gas.

公开(公告)号：US20240321995A1

公开(公告)日：2024-09-26

申请号：US18341865

申请日：2023-06-27

Applicant: Kioxia Corporation

Inventor： Masaya TODA ,  Kazuhiro MATSUO ,  Kota TAKAHASHI ,  Kenichiro TORATANI ,  Shosuke FUJII ,  Shoichi KABUYANAGI ,  Masayuki TANAKA ,  Wakako MORIYAMA

IPC: H01L29/49 ,  H01L29/66 ,  H01L29/775 ,  H01L29/786 ,  H10B12/00

CPC classification number: H01L29/4908 ,  H01L29/66969 ,  H01L29/775 ,  H01L29/78696 ,  H10B12/30 ,  H10B12/33 ,  H01L29/0676 ,  H01L29/413 ,  H01L29/42392 ,  H01L29/7869

Abstract: A semiconductor device of embodiments includes: a first electrode; a second electrode; an oxide semiconductor layer provided between the first electrode and the second electrode and including a first region, a second region, and a third region between the first region and the second region; a gate electrode facing the third region; a first insulating layer facing the first region; a second insulating layer facing the second region; and a gate insulating layer between the gate electrode and the oxide semiconductor layer, containing oxygen (O) and at least one metal element selected from a group consisting of Al, Hf, Zr, La, Y, Zn, In, Sn, and Ga, and having a chemical composition different from that of the oxide semiconductor layer.