公开(公告)号：US20210082528A1

公开(公告)日：2021-03-18

申请号：US16817371

申请日：2020-03-12

Applicant: Kioxia Corporation

Inventor： Kazutaka TAKIZAWA ,  Yoshihisa KOJIMA ,  Sumio KURODA ,  Masaaki NIIJIMA

IPC: G11C16/34 ,  G11C16/26 ,  G11C16/14 ,  G11C16/12 ,  G11C29/44

Abstract: According to one embodiment, a memory system includes a first memory and a memory controller. The first memory is nonvolatile and includes a plurality of memory cell transistors, each of which stores data corresponding to a threshold voltage. The memory controller causes the first memory to execute a read operation to acquire data corresponding to the threshold voltage from the plurality of memory cell transistors on the basis of a result of comparison between the threshold voltage and a read voltage. The memory controller selects a first candidate value from among a plurality of candidate values for the read voltage in accordance with a degree of stress that affects the threshold voltage; and causes the first memory to execute the read operation using the first candidate value as the read voltage.