公开(公告)号：US11616072B2

公开(公告)日：2023-03-28

申请号：US17656143

申请日：2022-03-23

Applicant: Kioxia Corporation

Inventor： Tetsuya Yamashita ,  Takuyo Nakayama ,  Takashi Ichikawa ,  Tadayoshi Uechi ,  Takashi Izumida

IPC: H01L27/11565 ,  H01L27/11575 ,  H01L27/11582 ,  H01L27/11578

Abstract: According to one embodiment, a semiconductor memory device includes a first stacked body in which a plurality of first conductive layers are stacked at intervals in a first direction above a semiconductor substrate; a second stacked body in which a plurality of second conductive layers are stacked at intervals in the first direction above the semiconductor substrate; and a first slit extending in a second direction perpendicular to the first direction, the first slit isolating the first stacked body and the second stacked body in a third direction perpendicular to the first and second directions.

公开(公告)号：US11355510B2

公开(公告)日：2022-06-07

申请号：US16801312

申请日：2020-02-26

Applicant: Kioxia Corporation

Inventor： Tetsuya Yamashita ,  Takuyo Nakayama ,  Takashi Ichikawa ,  Tadayoshi Uechi ,  Takashi Izumida

IPC: H01L27/11575 ,  H01L27/11582 ,  H01L27/11565 ,  H01L27/11578

Abstract: According to one embodiment, a semiconductor memory device includes a first stacked body in which a plurality of first conductive layers are stacked at intervals in a first direction above a semiconductor substrate; a second stacked body in which a plurality of second conductive layers are stacked at intervals in the first direction above the semiconductor substrate; and a first slit extending in a second direction perpendicular to the first direction, the first slit isolating the first stacked body and the second stacked body in a third direction perpendicular to the first and second directions.

公开(公告)号：US20230292505A1

公开(公告)日：2023-09-14

申请号：US17897056

申请日：2022-08-26

Applicant: KIOXIA CORPORATION

Inventor： Shinichi FURUKAWA ,  Saori Kashiwada ,  Takashi Ichikawa

IPC: H01L27/11582 ,  H01L27/11519 ,  H01L27/11556 ,  H01L27/11565

CPC classification number: H01L27/11582 ,  H01L27/11519 ,  H01L27/11556 ,  H01L27/11565

Abstract: According to one embodiment, a semiconductor device includes a substrate, a first film including electrode layers and insulating layers alternately stacked on the substrate, and a plurality of insulating films in the first film. The insulating films extend in a first direction parallel to a surface of the substrate and spaced from one another in a second direction parallel to the surface of the substrate. The semiconductor device further includes a semiconductor layer provided in at least one of the insulating films and first and second charge accumulation units between the semiconductor layer and one of the electrode layers. The insulating films include a first insulating film having a first width in the second direction and a second insulating film having a second width in the second direction that is greater than the first width.