Memory system and method for controlling semiconductor memory

    公开(公告)号:US12300328B2

    公开(公告)日:2025-05-13

    申请号:US18177877

    申请日:2023-03-03

    Abstract: A memory controller receives first, second, and third data by first, second, and third reads, specifying a first address, and respectively specifying first, second, and third read voltages higher in this order. The controller instructs a memory to execute a fourth read specifying a fourth read voltage lower than the first read voltage and the first address when a first difference between a first-value-bit count of the first data and an expected value is smaller than a second difference between a first-value-bit count of the third data and the expected value. The memory controller instructs the memory to execute a fifth read specifying a fifth read voltage higher than the third read voltage and the first address when the first difference is larger than the second difference.

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