公开(公告)号：US20220077174A1

公开(公告)日：2022-03-10

申请号：US17190865

申请日：2021-03-03

Applicant: Kioxia Corporation

Inventor： Toshifumi KURODA ,  Yusuke SHIMADA ,  Satoshi NAGASHIMA

IPC: H01L27/11578 ,  H01L27/11519 ,  H01L27/11524 ,  H01L27/11551 ,  H01L27/1157 ,  H01L27/11565

Abstract: A semiconductor storage device includes: a conductive layer and a second conductive layer that are arranged in a first direction; a plurality of first semiconductor layers facing the first conductive layer between the first conductive layer and the second conductive layer, the plurality of first semiconductor layers being arranged in a second direction that intersects the first direction; a first charge storage layer that is provided between the plurality of first semiconductor layers and the first conductive layer in the first direction, and extends in the second direction over a plurality of regions between the plurality of first semiconductor layers and the first conductive layer; and a first insulating layer provided between the plurality of first semiconductor layers and the first charge storage layer in the first direction. The first insulating layer includes a first region that faces one end of each of the first semiconductor layers in the second direction, in the first direction, a second region that faces the other end of each of the first semiconductor layers in the second direction, in the first direction, and a third region provided between the first region and the second region in the second direction. A nitrogen concentration in the first region and the second region is lower than a nitrogen concentration in the third region.

公开(公告)号：US20220085060A1

公开(公告)日：2022-03-17

申请号：US17191217

申请日：2021-03-03

Applicant: Kioxia Corporation

Inventor： Ryota NARASAKI ,  Weili CAI ,  Satoshi NAGASHIMA ,  Takayuki ISHIKAWA ,  Yusuke SHIMADA ,  Yefei HAN

IPC: H01L27/11582 ,  H01L23/522 ,  H01L27/11556

Abstract: A semiconductor storage device includes a first conductive layer; a first insulating layer between the first and second conductive layers; a second insulating layer between the first conductive layer and the first insulating layer; a third insulating layer between the second conductive layer and the first insulating layer; a fourth insulating layer between the second conductive layer and the third conductive layer; a fifth insulating layer between the second conductive layer and the fourth insulating layer; and a sixth insulating layer between the third conductive layer and the fourth insulating layer. The first conductive layer has a first surface. The second conductive layer has a second surface. A barrier conductive film containing at least one of nitrogen (N) or titanium (Ti) is provided on the first surface and the second surface.