公开(公告)号：US20230047644A1

公开(公告)日：2023-02-16

申请号：US17835180

申请日：2022-06-08

Applicant: Kioxia Corporation

Inventor： Shota KASHIYAMA ,  Weili CAI

IPC: H01L27/11582 ,  H01L27/11556

Abstract: A semiconductor storage device according to an embodiment includes a substrate, an interconnection layer region, a multi-layered body, a semiconductor body, and a columnar part. The multi-layered body has an end portion facing the interconnection layer region as an end portion in the first direction. The columnar part includes a first portion and a second portion, the first portion is at the end portion of the multi-layered body, the second portion is closer to the substrate than the first portion is. The first portion has a center. The second portion has a center. The center of the second portion in a second direction is displaced in the second direction with respect to the center of the first portion in the second direction. The second direction crosses the first direction.

公开(公告)号：US20220085060A1

公开(公告)日：2022-03-17

申请号：US17191217

申请日：2021-03-03

Applicant: Kioxia Corporation

Inventor： Ryota NARASAKI ,  Weili CAI ,  Satoshi NAGASHIMA ,  Takayuki ISHIKAWA ,  Yusuke SHIMADA ,  Yefei HAN

IPC: H01L27/11582 ,  H01L23/522 ,  H01L27/11556

Abstract: A semiconductor storage device includes a first conductive layer; a first insulating layer between the first and second conductive layers; a second insulating layer between the first conductive layer and the first insulating layer; a third insulating layer between the second conductive layer and the first insulating layer; a fourth insulating layer between the second conductive layer and the third conductive layer; a fifth insulating layer between the second conductive layer and the fourth insulating layer; and a sixth insulating layer between the third conductive layer and the fourth insulating layer. The first conductive layer has a first surface. The second conductive layer has a second surface. A barrier conductive film containing at least one of nitrogen (N) or titanium (Ti) is provided on the first surface and the second surface.

公开(公告)号：US20210296338A1

公开(公告)日：2021-09-23

申请号：US17018682

申请日：2020-09-11

Applicant: Kioxia Corporation

Inventor： Yefei HAN ,  Weili CAI ,  Naoya YOSHIMURA

IPC: H01L27/11556 ,  G11C5/02 ,  G11C5/06

Abstract: According to one embodiment, a semiconductor storage device includes a semiconductor pillar including a channel. The channel includes a first channel portion and a second channel portion. A virtual cross section intersecting a first direction and including a first interconnection, a first electrode, the semiconductor pillar, a second electrode, and a second interconnection is determined. Both first end portions of the first channel portion and a first midpoint between both the first end portions are determined in the virtual cross section. Both second end portions of the second channel portion and a second midpoint between both the second end portions are determined in the virtual cross section. In this case, an angle between a second direction and a center line connecting the first midpoint and the second midpoint is an acute angle.