公开(公告)号：US20070023866A1

公开(公告)日：2007-02-01

申请号：US11161230

申请日：2005-07-27

申请人： Kiran Chatty ,  Robert Gauthier ,  Andreas Stricker ,  Min Woo

发明人： Kiran Chatty ,  Robert Gauthier ,  Andreas Stricker ,  Min Woo

IPC分类号： H01L27/082

CPC分类号： H01L27/0262 ,  H01L29/732

摘要： A vertical silicon controlled rectifier (SCR) that directs an electro-static discharge (ESD) current directly to ground from the input/output pad. The vertical SCR is includes a vertical NPN and a vertical PNP that creates a very good SCR exhibiting very low ohmic on-resistance. The vertical SCR provides a low on-resistance and fast turn on, and can be adjusted to alter the trigger voltage value, holding voltage and how it is triggered. It can be optimized to trigger under ESD events and discharge the ESD current effectively to ground.

摘要翻译： 将静电放电（ESD）电流从输入/输出焊盘直接引导到地的垂直可控硅整流器（SCR）。 垂直SCR包括垂直NPN和垂直PNP，其产生非常好的SCR，表现出非常低的欧姆导通电阻。 垂直SCR提供低导通电阻和快速导通，可以调整以改变触发电压值，保持电压以及如何触发。 它可以优化以在ESD事件下触发并将ESD电流有效地放电到地。

公开(公告)号：US07005686B1

公开(公告)日：2006-02-28

申请号：US11161184

申请日：2005-07-26

申请人： Kiran V. Chatty ,  Robert J. Gauthier, Jr. ,  Mujahid Muhammad ,  Andreas D. Stricker ,  Min Woo

发明人： Kiran V. Chatty ,  Robert J. Gauthier, Jr. ,  Mujahid Muhammad ,  Andreas D. Stricker ,  Min Woo

IPC分类号： H01L29/66 ,  H01L21/33

CPC分类号： H01L27/0262 ,  H01L29/87

摘要： Disclosed is a method for increasing substrate resistance in a silicon controlled rectifier in order to decrease turn on time so that the silicon controlled rectifier may be used as an effective electrostatic discharge protection device to protect against HBM, MM and CDM discharge events. Additionally, disclosed is an improved SCR structure that is adapted for use as an electrostatic discharge device to protect against human body model events by delivering an electrostatic discharge current directly to a ground rail. The improved SCR structure incorporates various features for increasing substrate resistance and, thereby, for decreasing turn on time. These features include a second n-well that functions as an obstacle to current flow, a narrow current flow channel between co-planar buried n-bands connected to a lower portion of the second n-well, a zero threshold voltage area, and an external resistor electrically connected between the SCR and the ground rail.

摘要翻译： 公开了一种用于增加可控硅整流器中的衬底电阻以减少导通时间的方法，使得可控硅整流器可以用作有效的静电放电保护装置，以防止HBM，MM和CDM放电事件。 此外，公开了一种改进的SCR结构，其适于用作静电放电装置，以通过将静电放电电流直接递送到接地轨来防止人体模型事件。 改进的SCR结构包含用于增加衬底电阻并因此减少导通时间的各种特征。 这些特征包括作为电流流动的障碍的第二n阱，连接到第二n阱的下部的共平面埋入n波段之间的窄电流流动通道，零阈值电压区域和 外部电阻电连接在SCR和接地导轨之间。