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    PROCESS FOR PRODUCING TRANS-1, 4-CYCLOHEXANEDICARBOXYLIC ACID
    1.
    发明申请
    PROCESS FOR PRODUCING TRANS-1, 4-CYCLOHEXANEDICARBOXYLIC ACID 有权
    生产转-1,4-环己基二羧酸的方法

    公开(公告)号：US20080051600A1

    公开(公告)日：2008-02-28

    申请号：US11924161

    申请日：2007-10-25

    申请人： Koetsu ENDOU ,  Hirofumi Nakamura ,  Shinichi Tanaka

    发明人： Koetsu ENDOU ,  Hirofumi Nakamura ,  Shinichi Tanaka

    IPC分类号： C07C61/08

    CPC分类号： C07C51/353 ,  C07C51/363 ,  C07C2601/14 ,  C07C61/09

    摘要： A subject for the invention is to obtain trans-1,4-cyclohexanedicarboxylic acid (t-CHDA) in a high concentration by efficiently isomerizing cis-1,4-cyclohexanedicarboxylic acid (c-CHDA) by a simple method. The invention provides: (1) a process for producing t-CHDA which comprises heating crude CHDA to 180° C. or higher in an inert atmosphere and causing the t-CHDA formed by isomerization to precipitate in the molten c-CHDA while holding the crude CHDA at a temperature in the range of not lower than 180° C. and less than the melting point of t-CHDA; (2) a process for producing t-CHDA, wherein crude CHDA which is powdery or granular is heat-treated at a temperature of not lower than the melting point of c-CHDA and lower than the melting point of t-CHDA to thereby isomerize the cis isomer to the trans isomer while maintaining the powdery or granular state; (3) a process for producing t-CHDA, wherein crude CHDA is held at a temperature of not lower than the melting point of c-CHDA and lower than the melting point of t-CHDA in an inert atmosphere while maintaining flowing to thereby obtain powdery or granular t-CHDA; and (4) a process for purifying crude CHDA in which crude CHDA obtained through the step of hydrogenating TPA or the like is heated in an atmosphere of an inert gas to volatilize and remove impurities.

    摘要翻译： 本发明的目的是通过简单的方法有效地使顺式-1,4-环己烷二羧酸（c-CHDA）异构化，以高浓度获得反式-1,4-环己烷二羧酸（t-CHDA）。 本发明提供：（1）一种生产t-CHDA的方法，其包括在惰性气氛中将粗CHDA加热至180℃或更高，并使通过异构化形成的t-CHDA在熔融的c-CHDA中沉淀，同时保持 原料CHDA在不低于180℃且小于t-CHDA的熔点的温度范围内; （2）生产t-CHDA的方法，其中将粉末状或粒状的粗CHDA在不低于c-CHDA的熔点并低于t-CHDA的熔点的温度下进行热处理，从而异构化 顺式异构体反式异构体，同时保持粉状或颗粒状态; （3）生产t-CHDA的方法，其中将粗CHDA保持在不低于c-CHDA的熔点并低于在惰性气氛中的t-CHDA的熔点的温度，同时保持流动，从而获得 粉状或颗粒状t-CHDA; （4）一种纯化粗制CHDA的方法，其中通过氢化TPA等步骤得到的粗CHDA在惰性气体气氛中加热，挥发除去杂质。

    Process for producing trans-1,4-cyclohexanedicarboxylic acid
    2.
    发明授权
    Process for producing trans-1,4-cyclohexanedicarboxylic acid 有权
    反式-1,4-环己烷二羧酸的制备方法

    公开(公告)号：US07595423B2

    公开(公告)日：2009-09-29

    申请号：US11924161

    申请日：2007-10-25

    申请人： Koetsu Endou ,  Hirofumi Nakamura ,  Shinichi Tanaka

    发明人： Koetsu Endou ,  Hirofumi Nakamura ,  Shinichi Tanaka

    IPC分类号： C07C61/00

    CPC分类号： C07C51/353 ,  C07C51/363 ,  C07C2601/14 ,  C07C61/09

    摘要： A subject for the invention is to obtain trans-1,4-cyclohexanedicarboxylic acid (t-CHDA) in a high concentration by efficiently isomerizing cis-1,4-cyclohexanedicarboxylic acid (c-CHDA) by a simple method. The invention provides: (1) a process for producing t-CHDA which comprises heating crude CHDA to 180° C. or higher in an inert atmosphere and causing the t-CHDA formed by isomerization to precipitate in the molten c-CHDA while holding the crude CHDA at a temperature in the range of not lower than 180° C. and less than the melting point of t-CHDA; (2) a process for producing t-CHDA, wherein crude CHDA which is powdery or granular is heat-treated at a temperature of not lower than the melting point of c-CHDA and lower than the melting point of t-CHDA to thereby isomerize the cis isomer to the trans isomer while maintaining the powdery or granular state; (3) a process for producing t-CHDA, wherein crude CHDA is held at a temperature of not lower than the melting point of c-CHDA and lower than the melting point of t-CHDA in an inert atmosphere while maintaining flowing to thereby obtain powdery or granular t-CHDA; and (4) a process for purifying crude CHDA in which crude CHDA obtained through the step of hydrogenating TPA or the like is heated in an atmosphere of an inert gas to volatilize and remove impurities.

    摘要翻译： 本发明的目的是通过简单的方法有效地使顺式-1,4-环己烷二羧酸（c-CHDA）异构化，以高浓度获得反式-1,4-环己烷二羧酸（t-CHDA）。 本发明提供：（1）一种生产t-CHDA的方法，其包括在惰性气氛中将粗CHDA加热至180℃或更高，并使通过异构化形成的t-CHDA在熔融的c-CHDA中沉淀，同时保持 原料CHDA在不低于180℃且小于t-CHDA的熔点的温度范围内; （2）生产t-CHDA的方法，其中将粉末状或粒状的粗CHDA在不低于c-CHDA的熔点并低于t-CHDA的熔点的温度下进行热处理，从而异构化 顺式异构体反式异构体，同时保持粉状或颗粒状态; （3）生产t-CHDA的方法，其中将粗CHDA保持在不低于c-CHDA的熔点并低于在惰性气氛中的t-CHDA的熔点的温度，同时保持流动，从而获得 粉状或颗粒状t-CHDA; （4）一种纯化粗制CHDA的方法，其中通过氢化TPA等步骤得到的粗CHDA在惰性气体气氛中加热，挥发除去杂质。

    Process for producing trans-1,4-cyclohexanedicarboxylic acid
    3.
    发明申请
    Process for producing trans-1,4-cyclohexanedicarboxylic acid 有权
    反式-1,4-环己烷二羧酸的制备方法

    公开(公告)号：US20050014973A1

    公开(公告)日：2005-01-20

    申请号：US10831156

    申请日：2004-04-26

    申请人： Koetsu Endou ,  Hirofumi Nakamura ,  Shinichi Tanaka

    发明人： Koetsu Endou ,  Hirofumi Nakamura ,  Shinichi Tanaka

    IPC分类号： C07C51/353 ,  C07C51/363 ,  C07C61/24

    CPC分类号： C07C51/353 ,  C07C51/363 ,  C07C2601/14 ,  C07C61/09

    摘要： A subject for the invention is to obtain trans-1,4-cyclohexanedicarboxylic acid (t-CHDA) in a high concentration by efficiently isomerizing cis-1,4-cyclohexanedicarboxylic acid (c-CHDA) by a simple method. The invention provides: (1) a process for producing t-CHDA which comprises heating crude CHDA to 180° C. or higher in an inert atmosphere and causing the t-CHDA formed by isomerization to precipitate in the molten c-CHDA while holding the crude CHDA at a temperature in the range of not lower than 180° C. and less than the melting point of t-CHDA; (2) a process for producing t-CHDA, wherein crude CHDA which is powdery or granular is heat-treated at a temperature of not lower than the melting point of c-CHDA and lower than the melting point of t-CHDA to thereby isomerize the cis isomer to the trans isomer while maintaining the powdery or granular state; (3) a process for producing t-CHDA, wherein crude CHDA is held at a temperature of not lower than the melting point of c-CHDA and lower than the melting point of t-CHDA in an inert atmosphere while maintaining flowing to thereby obtain powdery or granular t-CHDA; and (4) a process for purifying crude CHDA in which crude CHDA obtained through the step of hydrogenating TPA or the like is heated in an atmosphere of an inert gas to volatilize and remove impurities.

    摘要翻译： 本发明的目的是通过简单的方法有效地使顺式-1,4-环己烷二羧酸（c-CHDA）异构化，以高浓度获得反式-1,4-环己烷二羧酸（t-CHDA）。 本发明提供：（1）一种生产t-CHDA的方法，其包括在惰性气氛中将粗CHDA加热至180℃或更高，并使通过异构化形成的t-CHDA在熔融的c-CHDA中沉淀，同时保持 原料CHDA在不低于180℃且小于t-CHDA的熔点的温度范围内; （2）生产t-CHDA的方法，其中将粉末状或粒状的粗CHDA在不低于c-CHDA的熔点并低于t-CHDA的熔点的温度下进行热处理，从而异构化 顺式异构体反式异构体，同时保持粉状或颗粒状态; （3）生产t-CHDA的方法，其中将粗CHDA保持在不低于c-CHDA的熔点并低于在惰性气氛中的t-CHDA的熔点的温度，同时保持流动，从而获得 粉状或颗粒状t-CHDA; （4）一种纯化粗制CHDA的方法，其中通过氢化TPA等步骤得到的粗CHDA在惰性气体气氛中加热，挥发除去杂质。

    Process for producing trans-1,4-cyclohexanedicarboxylic acid
    4.
    发明授权
    Process for producing trans-1,4-cyclohexanedicarboxylic acid 有权
    反式-1,4-环己烷二羧酸的制备方法

    公开(公告)号：US07420086B2

    公开(公告)日：2008-09-02

    申请号：US10831156

    申请日：2004-04-26

    申请人： Koetsu Endou ,  Hirofumi Nakamura ,  Shinichi Tanaka

    发明人： Koetsu Endou ,  Hirofumi Nakamura ,  Shinichi Tanaka

    IPC分类号： C07C61/00

    CPC分类号： C07C51/353 ,  C07C51/363 ,  C07C2601/14 ,  C07C61/09

    摘要： A subject for the invention is to obtain trans-1,4-cyclohexanedicarboxylic acid (t-CHDA) in a high concentration by efficiently isomerizing cis-1,4-cyclohexanedicarboxylic acid (c-CHDA) by a simple method. The invention provides: (1) a process for producing t-CHDA which comprises heating crude CHDA to 180° C. or higher in an inert atmosphere and causing the t-CHDA formed by isomerization to precipitate in the molten c-CHDA while holding the crude CHDA at a temperature in the range of not lower than 180° C. and less than the melting point of t-CHDA; (2) a process for producing t-CHDA, wherein crude CHDA which is powdery or granular is heat-treated at a temperature of not lower than the melting point of c-CHDA and lower than the melting point of t-CHDA to thereby isomerize the cis isomer to the trans isomer while maintaining the powdery or granular state; (3) a process for producing t-CHDA, wherein crude CHDA is held at a temperature of not lower than the melting point of c-CHDA and lower than the melting point of t-CHDA in an inert atmosphere while maintaining flowing to thereby obtain powdery or granular t-CHDA; and (4) a process for purifying crude CHDA in which crude CHDA obtained through the step of hydrogenating TPA or the like is heated in an atmosphere of an inert gas to volatilize and remove impurities.

    摘要翻译： 本发明的目的是通过简单的方法有效地使顺式-1,4-环己烷二羧酸（c-CHDA）异构化，以高浓度获得反式-1,4-环己烷二羧酸（t-CHDA）。 本发明提供：（1）一种生产t-CHDA的方法，其包括在惰性气氛中将粗CHDA加热至180℃或更高，并使通过异构化形成的t-CHDA在熔融的c-CHDA中沉淀，同时保持 原料CHDA在不低于180℃且小于t-CHDA的熔点的温度范围内; （2）生产t-CHDA的方法，其中将粉末状或粒状的粗CHDA在不低于c-CHDA的熔点并低于t-CHDA的熔点的温度下进行热处理，从而异构化 顺式异构体反式异构体，同时保持粉状或颗粒状态; （3）生产t-CHDA的方法，其中将粗CHDA保持在不低于c-CHDA的熔点并低于在惰性气氛中的t-CHDA的熔点的温度，同时保持流动，从而获得 粉状或颗粒状t-CHDA; （4）一种纯化粗制CHDA的方法，其中通过氢化TPA等步骤得到的粗CHDA在惰性气体气氛中加热，挥发除去杂质。

    SEMICONDUCTOR DEVICE
    10.
    发明申请
    SEMICONDUCTOR DEVICE 有权
    半导体器件

    公开(公告)号：US20090256260A1

    公开(公告)日：2009-10-15

    申请号：US12394911

    申请日：2009-02-27

    申请人： Hirofumi Nakamura

    发明人： Hirofumi Nakamura

    IPC分类号： H01L23/52 ,  H01L31/02 ,  H01L29/84

    CPC分类号： H01L27/14685 ,  H01L27/14618 ,  H01L27/14636 ,  H01L27/14683 ,  H01L2224/13

    摘要： A semiconductor device including a semiconductor element and a functional member fixed thereto with an adhesive film is provided, where the performance or reliability degradation due to moisture entered by way of the adhesive film itself or the interfaces between the adhesive film and members adjacent thereto can be suppressed with a simple structure. The semiconductor element has an active region for realizing a predetermined function, formed on a surface of the element. The functional member has a predetermined function and is fixed on a surface side of the semiconductor element with the adhesive film. A metal film covers a region including at least all outer side faces of the semiconductor element, all outer side faces of the adhesive film, an interface between the adhesive film and the semiconductor element, and an interface between the adhesive film and the functional member.

    摘要翻译： 提供一种半导体器件，其包括具有粘合剂膜的半导体元件和固定到其上的功能元件，其中由于通过粘合剂膜本身进入的水分的性能或可靠性劣化或者粘合剂膜与其相邻的构件之间的界面可以是 用简单的结构抑制。 半导体元件具有用于实现形成在元件的表面上的预定功能的有源区域。 功能元件具有预定的功能，并用粘合剂膜固定在半导体元件的表面侧。 金属膜覆盖包括半导体元件的至少所有外侧面，粘合膜的所有外侧面，粘合膜和半导体元件之间的界面以及粘合膜和功能元件之间的界面的区域。