公开(公告)号：US07291185B2

公开(公告)日：2007-11-06

申请号：US10479594

申请日：2002-06-06

申请人： Kohei Shiota ,  Toshiharu Saito ,  Kazumi Osamura ,  Hiroki Takeoka ,  Kazuhiro Nakatsubo ,  Toshiyuki Nishimori ,  Masatoshi Shibuya ,  Toshihiro Sasaki ,  Shigeo Okabe

发明人： Kohei Shiota ,  Toshiharu Saito ,  Kazumi Osamura ,  Hiroki Takeoka ,  Kazuhiro Nakatsubo ,  Toshiyuki Nishimori ,  Masatoshi Shibuya ,  Toshihiro Sasaki ,  Shigeo Okabe

IPC分类号： H01G9/00

CPC分类号： H01G13/006 ,  C23C14/08 ,  C23C14/562 ,  C23C14/5853 ,  H01G4/32 ,  Y10T29/417 ,  Y10T29/435 ,  Y10T29/49117

摘要： A method of manufacturing a both-side metallized insulation film comprises steps of: depositing zinc or a blend of zinc and aluminum onto both sides of an insulation film; and winding this metallized film into a product roll. The method is characterized in spraying an oxidizing gas onto a deposited layer on an inner side of the insulation film to be wound, during the winding step. During a vacuum deposition step, an oil layer is formed on at least one side of the metallized film. In addition, an oxide layer is formed by exposing a deposited layer on at least one side to oxygen, or by spraying an oxygen-containing gas onto the deposited layer on at least one side during the winding of the metallized film into the product roll.

摘要翻译： 制造双面金属化绝缘膜的方法包括以下步骤：在绝缘膜的两侧上沉积锌或锌和铝的共混物; 并将该金属化膜卷绕成产品卷。 该方法的特征在于，在卷绕步骤期间，将氧化气体喷射到待缠绕的绝缘膜的内侧上的沉积层上。 在真空沉积步骤期间，在金属化膜的至少一侧上形成油层。 此外，通过将至少一侧的沉积层暴露于氧，或者在将金属化膜卷入产品辊期间，在至少一侧上将含氧气体喷射到沉积层上形成氧化物层。

公开(公告)号：US5219500A

公开(公告)日：1993-06-15

申请号：US446598

申请日：1989-12-06

申请人： Makoto Yoshida ,  Masahiro Sato ,  Kazunori Koga ,  Kazumi Osamura ,  Shoji Kousaka ,  Tatsumi Maeda ,  Kiyoshi Yokoyama ,  Masafumi Matsunaka

发明人： Makoto Yoshida ,  Masahiro Sato ,  Kazunori Koga ,  Kazumi Osamura ,  Shoji Kousaka ,  Tatsumi Maeda ,  Kiyoshi Yokoyama ,  Masafumi Matsunaka

IPC分类号： C04B35/593

CPC分类号： C04B35/5935

摘要： Disclosed is a silicon nitride sintered body comprising 85 to 99 mole % of .beta.-Si.sub.3 N.sub.4, 1 to 5 mole % as the oxide (M.sub.2 O.sub.3) of at least one compound of an element (M) selected from the group consisting of Sc, Vb, Er, Ho and Dy and less than 10 mole % of excessive oxygen (O.sub.2) based on the three components, wherein the excessive oxygen/M.sub.2 O.sub.3 molar ratio is lower than 2.

摘要翻译： 公开了一种氮化硅烧结体，其包含85至99摩尔％的β-Si 3 N 4，1至5摩尔％的至少一种元素（M）的化合物的氧化物（M 2 O 3），其选自Sc，Vb， Er，Ho和Dy，并且基于三种组分小于10摩尔％的过量氧（O 2），其中过量的氧/ M 2 O 3摩尔比低于2。

公开(公告)号：US5114889A

公开(公告)日：1992-05-19

申请号：US618480

申请日：1990-11-27

申请人： Kazumi Osamura ,  Masaki Terazono ,  Shoji Kohsaka ,  Kazunori Koga ,  Akira Saito ,  Masahiro Sato ,  Hideki Uchimura

发明人： Kazumi Osamura ,  Masaki Terazono ,  Shoji Kohsaka ,  Kazunori Koga ,  Akira Saito ,  Masahiro Sato ,  Hideki Uchimura

IPC分类号： C04B35/593

CPC分类号： C04B35/593

摘要： Disclosed is a silicon nitride sintered body comprising 70 to 99 mole % of silicon nitride, 0.1 to 5 moles % of a rare earth element oxide and up to 25 moles % of silicon oxide and having a silicon oxide-to-rare earth element oxide molar ratio of from 2 to 25, wherein silicon nitride crystal grains have a fine acicular structure having an average particle major axis of up to 7 .mu.m and an average aspect ratio of at least 3.

摘要翻译： 公开了一种氮化硅烧结体，其包含70至99摩尔％的氮化硅，0.1至5摩尔％的稀土元素氧化物和至多25摩尔％的氧化硅，并且具有氧化硅与稀土元素氧化物摩尔 比例为2至25，其中氮化硅晶粒具有平均粒子长轴高达7μm，平均纵横比至少为3的细针状结构。

公开(公告)号：US4920085A

公开(公告)日：1990-04-24

申请号：US176605

申请日：1988-04-01

申请人： Makoto Yoshida ,  Masahiro Sato ,  Kazunori Koga ,  Kazumi Osamura ,  Shoji Kousaka ,  Tatsumi Maeda ,  Kiyoshi Yokoyama ,  Masafumi Matsunaka

发明人： Makoto Yoshida ,  Masahiro Sato ,  Kazunori Koga ,  Kazumi Osamura ,  Shoji Kousaka ,  Tatsumi Maeda ,  Kiyoshi Yokoyama ,  Masafumi Matsunaka

IPC分类号： C04B35/593

CPC分类号： C04B35/5935

摘要： Disclosed is a silicon nitride sintered body comprising 85 to 99 mol % of .beta.-Si.sub.3 N.sub.4, 1 to 5 mol % as the oxide (M.sub.2 O.sub.3) of at least one compound of an element (M) selected from the group consisting of Sc, Vb, Er, Ho and Dy and less than 10 mol % of excessive oxygen (O.sub.2) based on the three components, wherein the excessive oxygen/M.sub.2 O.sub.3 molar ratio is lower than 2.

摘要翻译： 公开了一种氮化硅烧结体，其包含85至99mol％的β-Si 3 N 4，1至5mol％的至少一种元素（M）的化合物的氧化物（M 2 O 3），其选自Sc，Vb， Er，Ho和Dy，并且基于三种组分小于10mol％的过量氧（O 2），其中过量的氧/ M 2 O 3摩尔比低于2。