摘要:
An ink jet recording device for jetting an ink droplet from a free surface of an ink material includes: an ink container for containing the ink material and providing the free surface of the ink material therein; a vibrating member for providing a vibrating energy to the free surface of the ink material by contacting thereto at an interface portion between the free surface of the ink material and the ink container, wherein the vibrating means surrounds the free surface so that the vibrating energy is concentrated at one specific portion on the free surface of the ink material in order to jet the ink droplet therefrom; and an actuating system for actuating the vibrating member. An ink jet recording method using the same is also disclosed.
摘要:
A recording element and a recording device is disclosed which may stably eject very fine liquid drops without nozzles and with low frequency low voltage driving. The element of the present invention provides vibrators on a substrate. On the vibrators are provided elastic members. The elastic members have their tips in a sharpened form, plate-like form, or needle-like form. The free surface of liquid are positioned closer to the bottom side of the elastic members than the tip of the elastic members to drive the vibrators with an external driving means.
摘要:
A recording head for carrying out printing by jetting ink drops for deposition at predetermined positions on recording media, and allowing minute drops to be jetted without using a nozzle to record high-definition images. The recording head includes an elastic member vibrating in response to the excitation of a vibration generating means vibrating in accordance with a pixel signal, wherein capillary waves are generated on the surface of ink by the vibration of the elastic member to jet the ink for deposition on recording media. The elastic member is of a cantilever construction that bending vibration is made by excitation. Also, the elastic member has a length of about 2&lgr; as the width of a side perpendicular to a vibration direction of bending vibration in the neighborhood of the tip of a free end of a cantilever construction, where &lgr; is given by the following expression: &lgr;={8&pgr;&sgr;/(&rgr;fe2)}⅓×104 (&mgr;m), where &sgr; is an ink surface tension (mN/m), &rgr; is an ink density (g/cm3), and fe is an excitation frequency (Hz).
摘要:
An object of this invention is to provide a semiconductor element manufacturing method in which, in forming a polycrystal semiconductor layer by applying ultraviolet rays to an amorphous semiconductor layer formed on a large substrate, an excimer laser employed in the conventional art is used in such a manner that the layer is made uniform in crystallinity, thereby to manufacture a polycrystal semiconductor layer high in quality. According to the present invention, in a semiconductor element manufacturing method comprising a step of applying an excimer laser beam providing a beam spot having a predetermined irradiation area to an amorphous semiconductor layer formed on an insulating substrate to crystallize the amorphous semiconductor layer to obtain a polycrystal semiconductor layer, the beam spot is moved over said amorphous semiconductor layer in a scanning mode while being shifted with a pitch of at most 1 mm, so that all the parts of the semiconductor layer are substantially equal to one another in the energy applied thereto.
摘要:
The first feature of the present invention resides in that in a method of semiconductor crystallization, comprising a characteristic determining step of applying first crystallizing energy to a predetermined area of an amorphous semiconductor thin film to determine the size of an area so as to form a single crystal nucleus on the area; and a polycrystalline semiconductor thin film forming step of forming a polycrystalline semiconductor thin film from the amorphous semiconductor thin film, the polycrystalline semiconductor thin film forming step, comprises: a film forming step of forming an amorphous semiconductor thin film on the surface of a substrate; a first crystallizing step of applying first crystallizing energy at regular intervals on the area having the size determined by the characteristic determining step of the amorphous semiconductor thin film; and a second crystallizing step of applying second crystallizing energy to the amorphous semiconductor thin film to grow the crystal of the amorphous semiconductor thin film from the crystal nucleus formed by the first crystallizing step.