公开(公告)号：US20190237324A1

公开(公告)日：2019-08-01

申请号：US16254167

申请日：2019-01-22

申请人： KYOCERA Corporation

发明人： Masahiro ARAKI

IPC分类号： H01L21/02 ,  H01L21/033 ,  C30B25/04 ,  C30B25/18 ,  C30B29/40

CPC分类号： H01L21/0262 ,  C30B25/04 ,  C30B25/18 ,  C30B29/406 ,  H01L21/02507 ,  H01L21/0254 ,  H01L21/0337

摘要： A semiconductor device manufacturing method according to the present disclosure includes: preparing a substrate having a surface layer at least made of semiconductor; forming a mask pattern having a plurality of openings on the surface layer using materials free of semiconductor vapor-phase growth; forming a brittle portion in each opening by a vapor-phase growth process; forming crystal growth-derived layer on the mask pattern by a vapor-phase growth process by growth of semiconductor crystals on a surface of the brittle portion ; and separating, at brittle portion, a crystal growth-derived layer from substrate.

公开(公告)号：US20190186041A1

公开(公告)日：2019-06-20

申请号：US15849088

申请日：2017-12-20

申请人： International Business Machines Corporation

发明人： Alexander Reznicek ,  Karthik Balakrishnan ,  Stephen W. Bedell ,  Pouya Hashemi ,  Bahman Hekmatshoartabari ,  Keith E. Fogel

IPC分类号： C30B29/06 ,  H01L29/16 ,  H01L29/04 ,  H01L29/06 ,  H01L21/683 ,  H01L21/02 ,  H01L23/498 ,  C30B25/18

CPC分类号： C30B29/06 ,  C30B25/18 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/02598 ,  H01L21/0262 ,  H01L21/6835 ,  H01L23/4985 ,  H01L29/04 ,  H01L29/0657 ,  H01L29/16 ,  H01L2221/68345 ,  H01L2221/68381

摘要： A structure including a three-dimensionally stretchable single crystalline semiconductor membrane located on a substrate is provided. The structure is formed by providing a three-dimensional (3D) wavy silicon germanium alloy layer on a silicon handler substrate. A single crystalline semiconductor material membrane is then formed on a physically exposed surface of the 3D wavy silicon germanium alloy layer. A substrate is then formed on a physically exposed surface of the single crystalline semiconductor material membrane. The 3D wavy silicon germanium alloy layer and the silicon handler substrate are thereafter removed providing the structure.

公开(公告)号：US20180305839A1

公开(公告)日：2018-10-25

申请号：US15769912

申请日：2016-09-27

申请人： NexWafe GmbH

发明人： Stefan Reber ,  Kai Schillinger ,  Frank Siebke

IPC分类号： C30B33/02 ,  C30B25/18 ,  C30B29/06 ,  H01L21/02 ,  H01L21/683

CPC分类号： C30B33/02 ,  C30B25/18 ,  C30B29/06 ,  C30B33/06 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/6835

摘要： A method for producing a semiconductor layer (3), including the following method steps: A creating a release layer (2) on a carrier substrate (1); B applying a semiconductor layer (3) to the release layer (2); C detaching the semiconductor layer (3) from the carrier substrate. The invention is characterized in that, in method step A, the release layer (2) is created so as to fully cover at least a processing side of the carrier substrate, in that, in method step B, the semiconductor layer (3) is applied so as to fully cover the release layer (2) at least on the processing side and partially overlap one or more peripheral sides (5a, 5b) of the carrier substrate and in that, between method steps B and C, in a method step C0, regions of the semiconductor layer (3) that overlap a peripheral side are removed. The invention also relates to a semiconductor wafer, to a device for edge correction, to a detaching unit and to a device for producing a semiconductor layer.

公开(公告)号：US20180258550A1

公开(公告)日：2018-09-13

申请号：US15635796

申请日：2017-06-28

申请人： Epileds Technologies, Inc.

发明人： Kung-Hsieh Hsu ,  Ming-Sen Hsu

IPC分类号： C30B25/18 ,  H01L21/02 ,  C30B29/40 ,  C23C16/34

CPC分类号： C30B25/18 ,  C23C16/34 ,  C30B25/183 ,  C30B29/403 ,  H01L21/02378 ,  H01L21/02381 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262

摘要： The present application provides a growth method of aluminum nitride (AlN), including the following steps: providing a substrate; using a metal organic chemical vapor deposition (MOCVD) device to simultaneously supply metal source gas, nitrogen source gas and group VI element source gas to the substrate to form an AlN nucleation layer on the substrate; and using the MOCVD device to simultaneously supply the nitrogen source gas and the metal source gas to the AlN nucleation layer to form an AlN crystalline layer on the AlN nucleation layer.

公开(公告)号：US20180204960A1

公开(公告)日：2018-07-19

申请号：US15745174

申请日：2016-07-06

申请人： SUMCO CORPORATION

发明人： Kazuhisa TORIGOE ,  Toshiaki ONO

IPC分类号： H01L31/0288 ,  C30B15/20 ,  C30B29/06 ,  C30B33/02 ,  H01L27/146 ,  C30B25/18 ,  H01L21/322

CPC分类号： H01L31/0288 ,  C30B15/203 ,  C30B15/305 ,  C30B25/18 ,  C30B29/06 ,  C30B30/04 ,  C30B33/02 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02664 ,  H01L21/3225 ,  H01L27/14687

摘要： An epitaxial silicon wafer is provided with a boron-doped silicon substrate and an epitaxial layer formed on a surface of the silicon substrate, wherein the boron concentration in the silicon substrate is 2.7×1017 atoms/cm3 or more and 1.3×1019 atoms/cm3 or less, and an initial oxygen concentration in the silicon substrate is 11×1017 atoms/cm3 or less. When an oxygen precipitate evaluation heat treatment, such as a heat treatment at 700° C. for 3 hours and a heat treatment at 1,000° C. for 16 hours is executed on the epitaxial silicon wafer, the density of oxygen precipitate in the silicon substrate is 1×1010/cm3 or less.

公开(公告)号：US10023974B2

公开(公告)日：2018-07-17

申请号：US14648256

申请日：2013-12-04

申请人： RFHIC Corporation

发明人： Timothy Mollart ,  Quanzhong Jiang ,  Michael John Edwards ,  Duncan Allsopp ,  Christopher Rhys Bowen ,  Wang Nang Wang

IPC分类号： H01L21/02 ,  C30B25/18 ,  C30B29/36 ,  C30B29/40 ,  C23C16/27 ,  C30B29/04 ,  H01L23/373

CPC分类号： C30B25/18 ,  C23C16/27 ,  C30B25/183 ,  C30B29/04 ,  C30B29/36 ,  C30B29/40 ,  C30B29/403 ,  C30B29/406 ,  H01L21/02376 ,  H01L21/02428 ,  H01L21/02433 ,  H01L21/0245 ,  H01L21/02513 ,  H01L21/02521 ,  H01L21/02538 ,  H01L21/0254 ,  H01L21/0262 ,  H01L23/3732 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method of fabricating a composite semiconductor component comprising: (i) providing a bowed substrate comprising a wafer of synthetic diamond material having a thickness td, the bowed substrate being bowed by an amount B and comprising a convex face and a concave face; (ii) growing a layer of compound semiconductor material on the convex face of the bowed substrate via a chemical vapour deposition technique at a growth temperature T to form a bowed composite semiconductor component comprising the layer of compound semiconductor material of thickness tsc on the convex face of the bowed substrate, the compound semiconductor material having a higher average thermal expansion coefficient than the synthetic diamond material between the growth temperature T and room temperature providing a thermal expansion mismatch ΔTec; and (iii) cooling the bowed composite semiconductor component, wherein the layer of compound semiconductor material contracts more than the wafer of synthetic diamond material during cooling due to the thermal expansion mismatch ΔTec, wherein B, td, tsc, and ΔTec are selected such that the layer of compound semiconductor material contracts on cooling by an amount which off-sets bowing in the bowed substrate thus pulling the bowed composite semiconductor component into a flat configuration, the layer of compound semiconductor material having a tensile stress after cooling of less than 500 MPa.

公开(公告)号：US20180174911A1

公开(公告)日：2018-06-21

申请号：US15825035

申请日：2017-11-28

申请人： Panasonic Intellectual Property Management Co., Ltd.

发明人： SHINSUKE KOMATSU ,  YOSHIO OKAYAMA ,  MASAKI NOBUOKA

IPC分类号： H01L21/78 ,  C30B29/40 ,  H01L21/02 ,  C01F17/00 ,  C30B25/18 ,  H01L33/00

CPC分类号： H01L21/7813 ,  C01F17/0025 ,  C30B25/18 ,  C30B29/403 ,  H01L21/02428 ,  H01L21/0254 ,  H01L33/007

摘要： An RAMO4 substrate that includes an RAMO4 monocrystalline substrate formed of a single crystal represented by general formula RAMO4, wherein R represents one or more trivalent elements selected from the group consisting of Sc, In, Y, and lanthanoid elements, A represents one or more trivalent elements selected from the group consisting of Fe(III), Ga, and Al, and M represents one or more divalent elements selected from the group consisting of Mg, Mn, Fe(II), Co, Cu, Zn, and Cd. The RAMO4 monocrystalline substrate has a principal surface with a plurality of grooves. The principal surface has an off-angle θ with respect to a cleaving surface of the single crystal. The RAMO4 monocrystalline substrate satisfies tan θ≤Wy/Wx, where Wx is the width at the top surface of a raised portion between the grooves, and Wy is the height of the raised portion.

公开(公告)号：US09997353B1

公开(公告)日：2018-06-12

申请号：US15498468

申请日：2017-04-26

申请人： Ananda H. Kumar ,  Srinivas H. Kumar ,  Tue Nguyen

发明人： Ananda H. Kumar ,  Srinivas H. Kumar ,  Tue Nguyen

IPC分类号： H01L21/30 ,  H01L21/02 ,  H01L29/20 ,  C30B1/02 ,  C30B29/06 ,  C30B25/18

CPC分类号： H01L21/0245 ,  C30B25/18 ,  C30B29/06 ,  C30B29/406 ,  C30B33/06 ,  H01L21/02422 ,  H01L21/0254 ,  H01L21/02658 ,  H01L29/2003

摘要： A composite substrate includes a single crystal silicon layer on a glass or glass ceramic layer on a support layer can be used to form GaN layer without cracks. The glass or glass ceramic layer can have a set point and/or strain point below the deposition temperature of GaN, which can assist in releasing stress in the deposited GaN layer. Additionally, the composite substrate can be exposed to a heated and dry hydrogen ambient to reduce an oxide layer between the silicon layer and the glass or glass ceramic layer, to allow the formation of free standing GaN layer.

公开(公告)号：US20180114715A1

公开(公告)日：2018-04-26

申请号：US15789654

申请日：2017-10-20

申请人： NuFlare Technology, Inc.

发明人： Yasushi IYECHIKA ,  Masayuki TSUKUI ,  Yoshitaka ISHIKAWA

IPC分类号： H01L21/687 ,  H01L21/02 ,  H01L21/67 ,  C30B25/10 ,  C30B25/18 ,  C30B25/12 ,  C30B29/40 ,  C30B29/68

CPC分类号： H01L21/68735 ,  C30B25/10 ,  C30B25/12 ,  C30B25/18 ,  C30B29/403 ,  C30B29/406 ,  C30B29/68 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02658 ,  H01L21/67103 ,  H01L21/68764 ,  H01L33/007 ,  H01L33/06 ,  H01L33/12 ,  H01L33/32

摘要： A vapor phase growth apparatus according to an embodiment includes a reaction chamber, a ring-shaped holder provided in the reaction chamber, the ring-shaped holder configured to hold a substrate, the ring-shaped holder including an outer portion having ring-shape and an inner portion having ring-shape, the inner portion including a substrate mounting surface positioned below an upper surface of the outer portion, the substrate mounting surface being a curved surface, the curved surface having convex regions and concave regions repeated in a circumferential direction, the curved surface having six-fold rotational symmetry, and a heater provided below the ring-shaped holder.

公开(公告)号：US09951442B2

公开(公告)日：2018-04-24

申请号：US15037854

申请日：2014-11-17

申请人： AIXATECH GMBH

发明人： Yilmaz Dikme

IPC分类号： H01L29/04 ,  H01L21/02 ,  C30B25/18 ,  C23C14/02 ,  C30B23/02 ,  C30B29/40 ,  C23C14/00 ,  C30B25/06 ,  C30B29/06 ,  C30B29/20

CPC分类号： C30B25/186 ,  C23C14/0036 ,  C23C14/022 ,  C23C14/024 ,  C30B23/025 ,  C30B25/06 ,  C30B25/18 ,  C30B29/06 ,  C30B29/20 ,  C30B29/403 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02631 ,  H01L29/04

摘要： The invention relates to a process for producing a composite body (36) having at least one functional layer or for the further use for producing an electronic or optoelectronic component (40, 42, 44). The composite body (36) is in the form of a layer structure and comprises at least one substrate (34), which is in the form of a plate and has at least one planar substrate surface, and at least one substantially polycrystalline or at least one substantially single-crystal layer (38), which comprises at least one compound semiconductor, a ceramic material or a metallic hard material.The process is characterized by the following steps: heating at least part of the planar substrate surface to a temperature of at least 100° C. and at most 550° C.; cleaning the substrate surface by supplying hydrogen from a first material source (20) and a plasma produced specifically therefor; terminating the substrate surface by applying carbon, nitrogen or oxygen from the first material source (20) or a second material source (22) and a plasma produced specifically therefor; and growing the at least one layer (38) by supplying material components of the compound semiconductor, of the ceramic material or of the metallic hard material from the first material source (20) and the second material source (22) to the at least one planar substrate surface. The invention also relates to the use of the composite body (36) produced according to one of the disclosed embodiments of the process or a combination thereof for producing an electronic or optoelectronic component.