公开(公告)号：US11329157B2

公开(公告)日：2022-05-10

申请号：US16607410

申请日：2019-08-20

Applicant: Korea Advanced Institute of Science and Technology

Inventor： Yang-Kyu Choi ,  Jun Woo Son ,  Jae Hur

IPC: H01L21/00 ,  H01L29/78 ,  H01L21/02 ,  H01L21/3205 ,  H01L27/108 ,  H01L29/861

Abstract: A two-terminal biristor in which a polysilicon emitter layer is inserted and a method of manufacturing the same are provided. The method of manufacturing the two-terminal biristor according to an embodiment of the present disclosure includes forming a first semiconductor layer of a first type on a substrate, forming a second semiconductor layer of a second type on the first semiconductor layer, forming a third semiconductor layer of the first type on the second semiconductor layer, and forming a polysilicon layer of the first type on the third semiconductor layer.