公开(公告)号：US08587044B2

公开(公告)日：2013-11-19

申请号：US13667380

申请日：2012-11-02

Applicant: Korea Institute of Science and Technology

Inventor： Hyun Cheol Koo ,  Hyung Jun Kim ,  Joon Yeon Chang ,  Suk Hee Han ,  Hi Jung Kim

IPC: H01L21/02

CPC classification number: H01L29/66984 ,  G11C11/161 ,  H01L21/823807 ,  H01L21/823828 ,  H01L21/8252 ,  H01L27/0605 ,  H03K19/18

Abstract: A complementary logic device includes: an insulating layer formed on a substrate; a source electrode formed of a ferromagnetic body on the insulating layer; a gate insulating film; a gate electrode formed on the gate insulating film and controlling a magnetization direction of the source electrode; a channel layer formed on each of a first side surface and a second side surface of the source electrode and transmitting spin-polarized electrons from the source electrode; a first drain electrode formed on the first side surface of the source electrode; and a second drain electrode formed on the second side surface of the source electrode, wherein a magnetization direction of the first drain electrode and a magnetization direction of the second drain electrode are antiparallel to each other. Therefore, not only characteristics of low power and high speed but also characteristics of non-volatility and multiple switching by spin may be obtained.

Abstract translation: 互补逻辑器件包括：形成在衬底上的绝缘层; 在所述绝缘层上由铁磁体形成的源电极; 栅极绝缘膜; 形成在所述栅极绝缘膜上并控制所述源电极的磁化方向的栅电极; 形成在所述源电极的第一侧面和第二侧面的每一个上的沟道层，并且从所述源电极传输自旋极化电子; 形成在所述源电极的所述第一侧表面上的第一漏电极; 以及形成在所述源电极的所述第二侧表面上的第二漏电极，其中所述第一漏电极的磁化方向和所述第二漏电极的磁化方向彼此反平行。 因此，不仅可以获得低功率和高速度的特性，而且可以获得非挥发性和通过自旋的多次切换的特性。