公开(公告)号：US10014396B2

公开(公告)日：2018-07-03

申请号：US15487695

申请日：2017-04-14

Applicant: Korea Institute of Science and Technology

Inventor： Joon Yeon Chang ,  Tae Eon Park ,  Byoung Chul Min ,  Hyun Cheol Koo ,  Suk Hee Han

IPC: H01L29/47 ,  H01L43/02 ,  H01L29/66 ,  H01L29/06

CPC classification number: H01L29/66984 ,  B82Y10/00 ,  H01L27/222 ,  H01L29/045 ,  H01L29/0673 ,  H01L29/417 ,  H01L29/41725 ,  H01L29/47 ,  H01L29/82 ,  H01L43/08

Abstract: A spin control electronic device operable at room temperature according to an embodiment of the present invention includes a transfer channel that includes a low-dimensional nanostructure, the nanostructure being located on a substrate, having an elongate shape in a first direction and having a cross section, cut along a second direction that is perpendicular to the first direction, in the shape of a triangle; a source electrode located on the substrate and intersecting the transfer channel, the source electrode covering part of the transfer channel; and a drain electrode spaced apart from the source electrode on the substrate, the drain electrode intersecting the transfer channel and covering part of the transfer channel.

公开(公告)号：US09331266B2

公开(公告)日：2016-05-03

申请号：US14132492

申请日：2013-12-18

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY ,  THE UNITED STATES OF AMERICA, AS REPRESENTED BY THE SECRETARY OF THE NAVY

Inventor： Joon Yeon Chang ,  Jin Ki Hong ,  Jin Dong Song ,  Mark Johnson

IPC: H03K19/173 ,  H01L43/02 ,  H01L27/22 ,  H03K19/0175 ,  H03K19/16 ,  H01L43/08 ,  G11C11/16

CPC classification number: H01L43/02 ,  G11C11/161 ,  G11C11/1695 ,  H01L27/22 ,  H01L43/08 ,  H03K19/017581 ,  H03K19/16

Abstract: A non-volatile reconfigurable logic device executing logical operations and a memory function and controlled by a magnetic field is provided. The reconfigurable logic device includes i) at least one semiconductor device; and ii) a pair of magnetic field controlled devices respectively spaced apart from both sides of the semiconductor device and that are adapted to generate magnetic field leakage to control the semiconductor device. The semiconductor device includes i) a first semiconductor layer; and ii) a second semiconductor layer located on the first semiconductor layer. One of the first semiconductor layer and the second semiconductor layer is a p-type semiconductor layer and the other is an n-type semiconductor layer.

Abstract translation: 提供执行逻辑操作和存储功能并由磁场控制的非易失性可重构逻辑器件。 该可重构逻辑器件包括i）至少一个半导体器件; 以及ii）一对磁场控制装置，其分别与所述半导体器件的两侧间隔开并且适于产生磁场泄漏以控制所述半导体器件。 半导体器件包括i）第一半导体层; 以及ii）位于所述第一半导体层上的第二半导体层。 第一半导体层和第二半导体层中的一个是p型半导体层，另一个是n型半导体层。

公开(公告)号：US09099328B2

公开(公告)日：2015-08-04

申请号：US14052129

申请日：2013-10-11

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Hyun Cheol Koo ,  Hyung-Jun Kim ,  Joon Yeon Chang ,  Jun Woo Choi ,  Suk Hee Han

IPC: H01L21/02 ,  H01L29/08 ,  H01L29/66 ,  H01L29/82 ,  H01L29/06 ,  H01L29/417 ,  H01L29/423

CPC classification number: H01L29/0673 ,  H01L29/41725 ,  H01L29/4238 ,  H01L29/66984

Abstract: A complementary device including a gate electrode, a channel, a source electrode connected to the gate electrode and the channel, and a first drain electrode and a second drain electrode connected to the gate electrode and the channel is provided. The first/second drain electrode is formed so that, in accordance with a voltage applied to the gate electrode, electron spins injected into the source electrode are moved from the source electrode to the first/second drain electrode through the channel while rotating in a first/second direction. Directions of the electron spins that reach the first drain electrode and the second drain electrode are opposite to each other.

Abstract translation: 提供了包括栅电极，沟道，连接到栅电极和沟道的源电极以及连接到栅电极和沟道的第一漏电极和第二漏电极的互补器件。 第一/第二漏极形成为使得根据施加到栅电极的电压，注入到源电极的电子自旋通过沟道从源电极移动到第一/第二漏电极，同时在第一 /第二个方向。 到达第一漏电极和第二漏电极的电子自旋的方向彼此相反。

公开(公告)号：US08587044B2

公开(公告)日：2013-11-19

申请号：US13667380

申请日：2012-11-02

Applicant: Korea Institute of Science and Technology

Inventor： Hyun Cheol Koo ,  Hyung Jun Kim ,  Joon Yeon Chang ,  Suk Hee Han ,  Hi Jung Kim

IPC: H01L21/02

CPC classification number: H01L29/66984 ,  G11C11/161 ,  H01L21/823807 ,  H01L21/823828 ,  H01L21/8252 ,  H01L27/0605 ,  H03K19/18

Abstract: A complementary logic device includes: an insulating layer formed on a substrate; a source electrode formed of a ferromagnetic body on the insulating layer; a gate insulating film; a gate electrode formed on the gate insulating film and controlling a magnetization direction of the source electrode; a channel layer formed on each of a first side surface and a second side surface of the source electrode and transmitting spin-polarized electrons from the source electrode; a first drain electrode formed on the first side surface of the source electrode; and a second drain electrode formed on the second side surface of the source electrode, wherein a magnetization direction of the first drain electrode and a magnetization direction of the second drain electrode are antiparallel to each other. Therefore, not only characteristics of low power and high speed but also characteristics of non-volatility and multiple switching by spin may be obtained.

Abstract translation: 互补逻辑器件包括：形成在衬底上的绝缘层; 在所述绝缘层上由铁磁体形成的源电极; 栅极绝缘膜; 形成在所述栅极绝缘膜上并控制所述源电极的磁化方向的栅电极; 形成在所述源电极的第一侧面和第二侧面的每一个上的沟道层，并且从所述源电极传输自旋极化电子; 形成在所述源电极的所述第一侧表面上的第一漏电极; 以及形成在所述源电极的所述第二侧表面上的第二漏电极，其中所述第一漏电极的磁化方向和所述第二漏电极的磁化方向彼此反平行。 因此，不仅可以获得低功率和高速度的特性，而且可以获得非挥发性和通过自旋的多次切换的特性。