公开(公告)号：US08652876B2

公开(公告)日：2014-02-18

申请号：US13672943

申请日：2012-11-09

Applicant: Korea Institute of Science and Technology

Inventor： Young Hwan Kim ,  Yong Tae Kim ,  Jinn Il Choi

IPC: H01L45/00

CPC classification number: H01L45/16 ,  H01L27/2463 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/144 ,  H01L45/1675

Abstract: A method of manufacturing a phase-change random access memory includes: sequentially depositing an insulating layer, a first electrode layer, a phase change material layer, and a transfer material layer on a substrate; forming an array pattern in the transfer material layer using a laser interference lithography process; forming a metal layer on the transfer material layer having the array pattern formed; forming a second electrode layer by removing the transfer material layer; and forming a phase change layer by etching the phase change material layer using the second electrode layer as a mask. Accordingly, the manufacturing process of the phase-change random access memory may achieve an increase in speed and may be simplified.

Abstract translation: 制造相变随机存取存储器的方法包括：在衬底上依次沉积绝缘层，第一电极层，相变材料层和转移材料层; 使用激光干涉光刻工艺在转印材料层中形成阵列图案; 在形成有阵列图案的转印材料层上形成金属层; 通过去除转移材料层形成第二电极层; 以及通过使用第二电极层作为掩模蚀刻相变材料层来形成相变层。 因此，相变随机存取存储器的制造过程可以实现速度的提高并且可以被简化。