公开(公告)号：US20060075686A1

公开(公告)日：2006-04-13

申请号：US11288094

申请日：2005-11-29

申请人： Kou Hasegawa ,  Hozumi Satou ,  Osamu Ishikawa ,  Yukio Hosaka

发明人： Kou Hasegawa ,  Hozumi Satou ,  Osamu Ishikawa ,  Yukio Hosaka

IPC分类号： B24B7/30 ,  B24D18/00

CPC分类号： B24B37/245 ,  B24B37/24 ,  B24D3/28 ,  B24D11/001 ,  B24D18/0009 ,  C09K3/1454

摘要： An object of the present invention is to provide a polishing body, wherein the abrasive in the polishing body are extremely dispersed well, which provides stable polishing performance in the polishing process, and which can effectively reduce the occurrence of scratches even in a case a large quantity of the abrasive are contained. A polishing part constituting the polishing body in the invention is produced obtained by loading predetermined amounts of butadiene, styrene, methyl methacrylate, itaconic acid, acrylic acid, α-methylstyrenedimer, and t-dodecylmercaptan in an autoclave, making the mixture react for 16 hours at 75° C. to obtain an emulsion wherein a copolymer is dispersed, adjusting this emulsion to pH 8.5, incorporating cerium oxide powder with an average primary particle diameter of 0.3 μm and stirring to obtain an aqueous dispersion, drying this aqueous dispersion by spreading it thinly across a film, and mold pressing the dried product obtained. The above-mentioned polishing part may have a crosslinked structure. The polishing body in the invention can be used favorably in a polishing pad and the like, for polishing the surface of a semiconductor wafer or the like.

摘要翻译： 本发明的目的是提供一种抛光体，其中抛光体中的磨料非常分散，在抛光过程中提供稳定的抛光性能，并且即使在大的情况下也能有效地减少划痕的发生 含有磨料的数量。 通过在高压釜中加载预定量的丁二烯，苯乙烯，甲基丙烯酸甲酯，衣康酸，丙烯酸，α-甲基苯乙炔二酮和叔十二烷基硫醇，制得本发明中构成抛光体的抛光部分，使混合物反应16小时 在75℃下得到其中分散共聚物的乳液，将该乳液调节至pH8.5，并加入平均一次粒径为0.3μm的二氧化铈粉末并搅拌，得到水分散液，通过涂布干燥该水性分散体 薄膜穿过薄膜，并模压所获得的干燥产品。 上述抛光部分可以具有交联结构。 本发明的研磨体可以在抛光垫等中有利地使用，用于研磨半导体晶片等的表面。

公开(公告)号：US07201641B2

公开(公告)日：2007-04-10

申请号：US11288086

申请日：2005-11-29

申请人： Kou Hasegawa ,  Hozumi Satou ,  Osamu Ishikawa ,  Yukio Hosaka

发明人： Kou Hasegawa ,  Hozumi Satou ,  Osamu Ishikawa ,  Yukio Hosaka

IPC分类号： B24B1/00

CPC分类号： B24B37/245 ,  B24B37/24 ,  B24D3/28 ,  B24D11/001 ,  B24D18/0009 ,  C09K3/1454

摘要： An object of the present invention is to provide a polishing body, wherein the abrasive in the polishing body are extremely dispersed well, which provides stable polishing performance in the polishing process, and which can effectively reduce the occurrence of scratches even in a case a large quantity of the abrasive are contained. A polishing part constituting the polishing body in the invention is produced obtained by loading predetermined amounts of butadiene, styrene, methyl methacrylate, itaconic acid, acrylic acid, α-methylstyrenedimer, and t-dodecylmercaptan in an autoclave, making the mixture react for 16 hours at 75° C. to obtain an emulsion wherein a copolymer is dispersed, adjusting this emulsion to pH 8.5, incorporating cerium oxide powder with an average primary particle diameter of 0.3 μm and stirring to obtain an aqueous dispersion, drying this aqueous dispersion by spreading it thinly across a film, and mold pressing the dried product obtained. The above-mentioned polishing part may have a crosslinked structure. The polishing body in the invention can be used favorably in a polishing pad and the like, for polishing the surface of a semiconductor wafer or the like.

摘要翻译： 本发明的目的是提供一种抛光体，其中抛光体中的磨料非常分散，在抛光过程中提供稳定的抛光性能，并且即使在大的情况下也能有效地减少划痕的发生 含有磨料的数量。 通过在高压釜中加载预定量的丁二烯，苯乙烯，甲基丙烯酸甲酯，衣康酸，丙烯酸，α-甲基苯乙炔二酮和叔十二烷基硫醇，制得本发明中构成抛光体的抛光部分，使混合物反应16小时 在75℃下得到其中分散共聚物的乳液，将该乳液调节至pH8.5，并加入平均一次粒径为0.3μm的二氧化铈粉末并搅拌，得到水分散液，通过涂布干燥该水性分散体 薄膜穿过薄膜，并模压所获得的干燥产品。 上述抛光部分可以具有交联结构。 本发明的研磨体可以在抛光垫等中有利地使用，用于研磨半导体晶片等的表面。

公开(公告)号：US20060116054A1

公开(公告)日：2006-06-01

申请号：US11288086

申请日：2005-11-29

申请人： Kou Hasegawa ,  Hozumi Satou ,  Osamu Ishikawa ,  Yukio Hosaka

发明人： Kou Hasegawa ,  Hozumi Satou ,  Osamu Ishikawa ,  Yukio Hosaka

IPC分类号： B24B7/30

CPC分类号： B24B37/245 ,  B24B37/24 ,  B24D3/28 ,  B24D11/001 ,  B24D18/0009 ,  C09K3/1454

摘要： An object of the present invention is to provide a polishing body, wherein the abrasive in the polishing body are extremely dispersed well, which provides stable polishing performance in the polishing process, and which can effectively reduce the occurrence of scratches even in a case a large quantity of the abrasive are contained. A polishing part constituting the polishing body in the invention is produced obtained by loading predetermined amounts of butadiene, styrene, methyl methacrylate, itaconic acid, acrylic acid, α-methylstyrenedimer, and t-dodecylmercaptan in an autoclave, making the mixture react for 16 hours at 75° C. to obtain an emulsion wherein a copolymer is dispersed, adjusting this emulsion to pH 8.5, incorporating cerium oxide powder with an average primary particle diameter of 0.3 μm and stirring to obtain an aqueous dispersion, drying this aqueous dispersion by spreading it thinly across a film, and mold pressing the dried product obtained. The above-mentioned polishing part may have a crosslinked structure. The polishing body in the invention can be used favorably in a polishing pad and the like, for polishing the surface of a semiconductor wafer or the like.

公开(公告)号：US07001252B2

公开(公告)日：2006-02-21

申请号：US10030141

申请日：2001-05-29

申请人： Kou Hasegawa ,  Hozumi Satou ,  Osamu Ishikawa ,  Yukio Hosaka

发明人： Kou Hasegawa ,  Hozumi Satou ,  Osamu Ishikawa ,  Yukio Hosaka

IPC分类号： B24B7/22

CPC分类号： B24B37/245 ,  B24B37/24 ,  B24D3/28 ,  B24D11/001 ,  B24D18/0009 ,  C09K3/1454

摘要： An object of the present invention is to provide a polishing body, wherein the abrasive in the polishing body are extremely dispersed well, which provides stable polishing performance in the polishing process, and which can effectively reduce the occurrence of scratches even in a case a large quantity of the abrasive are contained. A polishing part constituting the polishing body in the invention is produced obtained by loading predetermined amounts of butadiene, styrene, methyl methacrylate, itaconic acid, acrylic acid, α-methylstyrenedimer, and t-dodecylmercaptan in an autoclave, making the mixture react for 16 hours at 75° C. to obtain an emulsion wherein a copolymer is dispersed, adjusting this emulsion to pH8.5, incorporating cerium oxide powder with an average primary particle diameter of 0.3 μm and stirring to obtain an aqueous dispersion, drying this aqueous dispersion by spreading it thinly across a film, and mold pressing the dried product obtained. The above-mentioned polishing part may have a crosslinked structure. The polishing body in the invention can be used favorably in a polishing pad and the like, for polishing the surface of a semiconductor wafer or the like.

摘要翻译： 本发明的目的是提供一种抛光体，其中抛光体中的磨料非常分散，在抛光过程中提供稳定的抛光性能，并且即使在大的情况下也能有效地减少划痕的发生 含有磨料的数量。 通过在高压釜中加载预定量的丁二烯，苯乙烯，甲基丙烯酸甲酯，衣康酸，丙烯酸，α-甲基苯乙炔二酮和叔十二烷基硫醇，制得本发明中构成抛光体的抛光部分，使混合物反应16小时 在75℃下，得到其中分散共聚物的乳液，将该乳液调节至pH8.5，并加入平均一次粒径为0.3μm的二氧化铈粉末并搅拌，得到水分散体，通过涂布干燥该水性分散体 薄膜穿过薄膜，模压所得干燥产品。 上述抛光部分可以具有交联结构。 本发明的研磨体可以在抛光垫等中有利地使用，用于研磨半导体晶片等的表面。

公开(公告)号：US07217305B2

公开(公告)日：2007-05-15

申请号：US11288094

申请日：2005-11-29

申请人： Kou Hasegawa ,  Hozumi Satou ,  Osamu Ishikawa ,  Yukio Hosaka

发明人： Kou Hasegawa ,  Hozumi Satou ,  Osamu Ishikawa ,  Yukio Hosaka

IPC分类号： B24D3/00 ,  B24B7/22

CPC分类号： B24B37/245 ,  B24B37/24 ,  B24D3/28 ,  B24D11/001 ,  B24D18/0009 ,  C09K3/1454

摘要： An object of the present invention is to provide a polishing body, wherein the abrasive in the polishing body are extremely dispersed well, which provides stable polishing performance in the polishing process, and which can effectively reduce the occurrence of scratches even in a case a large quantity of the abrasive are contained. A polishing part constituting the polishing body in the invention is produced obtained by loading predetermined amounts of butadiene, styrene, methyl methacrylate, itaconic acid, acrylic acid, α-methylstyrenedimer, and t-dodecylmercaptan in an autoclave, making the mixture react for 16 hours at 75° C. to obtain an emulsion wherein a copolymer is dispersed, adjusting this emulsion to pH8.5, incorporating cerium oxide powder with an average primary particle diameter of 0.3 μm and stirring to obtain an aqueous dispersion, drying this aqueous dispersion by spreading it thinly across a film, and mold pressing the dried product obtained. The above-mentioned polishing part may have a crosslinked structure. The polishing body in the invention can be used favorably in a polishing pad and the like, for polishing the surface of a semiconductor wafer or the like.

摘要翻译： 本发明的目的是提供一种抛光体，其中抛光体中的磨料非常分散，在抛光过程中提供稳定的抛光性能，并且即使在大的情况下也能有效地减少划痕的发生 含有磨料的数量。 通过在高压釜中加载预定量的丁二烯，苯乙烯，甲基丙烯酸甲酯，衣康酸，丙烯酸，α-甲基苯乙炔二酮和叔十二烷基硫醇，制得本发明中构成抛光体的抛光部分，使混合物反应16小时 在75℃下，得到其中分散共聚物的乳液，将该乳液调节至pH8.5，并加入平均一次粒径为0.3μm的二氧化铈粉末并搅拌，得到水分散体，通过涂布干燥该水性分散体 薄膜穿过薄膜，模压所得干燥产品。 上述抛光部分可以具有交联结构。 本发明的研磨体可以在抛光垫等中有利地使用，用于研磨半导体晶片等的表面。

公开(公告)号：US07183213B2

公开(公告)日：2007-02-27

申请号：US10892096

申请日：2004-07-16

申请人： Hiroshi Shiho ,  Yukio Hosaka ,  Kou Hasegawa ,  Nobuo Kawahashi

发明人： Hiroshi Shiho ,  Yukio Hosaka ,  Kou Hasegawa ,  Nobuo Kawahashi

IPC分类号： H01L21/302

CPC分类号： B24B37/205 ,  B24B37/013

摘要： A chemical mechanical polishing pad. The pad contains a water-insoluble matrix and Water-soluble particles dispersed in the water-insoluble matrix material and has a polishing surface and a non-polishing surface on a side opposite to the polishing surface. The pad has a light transmitting area which optically communicates from the polishing surface to the non-polishing surface. The non-polishing surface of the light transmitting area has a surface roughness (Ra) of 10 pm or less.

摘要翻译： 化学机械抛光垫。 垫包含分散在水不溶性基质材料中的水不溶性基质和水溶性颗粒，并且在与抛光表面相对的一侧上具有抛光表面和非抛光表面。 垫具有从抛光表面与非抛光表面光学连通的透光区域。 透光区域的非抛光面的表面粗糙度（Ra）为10μm以下。

公开(公告)号：US20050014376A1

公开(公告)日：2005-01-20

申请号：US10892096

申请日：2004-07-16

申请人： Hiroshi Shiho ,  Yukio Hosaka ,  Kou Hasegawa ,  Nobuo Kawahashi

发明人： Hiroshi Shiho ,  Yukio Hosaka ,  Kou Hasegawa ,  Nobuo Kawahashi

IPC分类号： B24B37/013 ,  B24B37/20 ,  H01L21/302 ,  H01L21/461

CPC分类号： B24B37/205 ,  B24B37/013

摘要： A chemical mechanical polishing pad. The pad contains a water-insoluble matrix and water-soluble particles dispersed in the water-insoluble matrix material and has a polishing surface and a non-polishing surface on a side opposite to the polishing surface. The pad has a light transmitting area which optically communicates from the polishing surface to the non-polishing surface. The non-polishing surface of the light transmitting area has a surface roughness (Ra) of 10 μm or less.

摘要翻译： 化学机械抛光垫。 垫包含分散在水不溶性基质材料中的水不溶性基质和水溶性颗粒，并且在与抛光表面相对的一侧上具有抛光表面和非抛光表面。 垫具有从抛光表面与非抛光表面光学连通的透光区域。 透光区域的非抛光表面的表面粗糙度（Ra）为10μm以下。

公开(公告)号：US06848974B2

公开(公告)日：2005-02-01

申请号：US10252696

申请日：2002-09-24

申请人： Kou Hasegawa ,  Yukio Hosaka

发明人： Kou Hasegawa ,  Yukio Hosaka

IPC分类号： B24B37/20 ,  B24B37/22 ,  B24B37/24 ,  B24D13/12 ,  B24D13/14 ,  H01L21/304 ,  H01L21/306 ,  B24B1/00

CPC分类号： B24B37/22 ,  H01L21/30625

摘要： An object of the present invention is to provide a polishing pad for a semiconductor wafer which can perform a stable polishing while preventing a polishing layer from floating up from a supporting layer and a surface of a polishing pad from bending during polishing using a polishing pad having a multi-layered structure of a polishing layer and a supporting layer, and a polishing process using thereof. The polishing pad of the present invention is characterized in that it is comprising a supporting layer which is a non-porous elastic body and a polishing layer which is laminated on one surface of the supporting layer, and a polishing process using thereof. Shore D hardness of the polishing layer is preferably 35 or more, and hardness of the supporting layer is preferably lower than that of the polishing layer.

摘要翻译： 本发明的目的是提供一种用于半导体晶片的抛光垫，其可以执行稳定的抛光，同时防止抛光层从支撑层浮起并且抛光垫的表面在抛光期间使用抛光垫弯曲， 抛光层和支撑层的多层结构，以及使用其的抛光工艺。 本发明的抛光垫的特征在于，其包括作为无孔弹性体的支撑层和层叠在支撑层的一个表面上的研磨层和使用其的研磨工序。 抛光层的肖氏D硬度优选为35以上，并且支撑层的硬度优选低于抛光层的硬度。

公开(公告)号：US07323415B2

公开(公告)日：2008-01-29

申请号：US10529742

申请日：2004-04-23

申请人： Hiroshi Shiho ,  Yukio Hosaka ,  Kou Hasegawa ,  Nobuo Kawahashi

发明人： Hiroshi Shiho ,  Yukio Hosaka ,  Kou Hasegawa ,  Nobuo Kawahashi

IPC分类号： H01L21/302

CPC分类号： B24B37/205

摘要： An objective of the present invention is to provide a polishing pad for a semiconductor wafer and a laminated body for polishing of a semiconductor wafer equipped with the same which can perform optical endpoints detection without lowering the polishing performance as well as methods for polishing of a semiconductor wafer using them. The polishing pad of the present invention comprises a substrate 11 for a polishing pad provided with a through hole penetrating from surface to back, a light transmitting part 12 fitted in the through hole, the light transmitting part comprises a water-insoluble matrix material (1,2-polybutadiene) and a water-soluble particle (β-cyclodextrin) dispersed in the water-insoluble matrix material, and the water-soluble particle is less than 5% by volume based on 100% by volume of the total amount of the water-insoluble matrix material and the water-soluble particle. In addition, the laminated body for polishing of the present invention comprises a supporting layer on a backside of the polishing pad. These polishing pad and laminated body for polishing can comprise a fixing layer 13 on a backside.

摘要翻译： 本发明的目的是提供一种用于半导体晶片的抛光垫和用于抛光其配备的半导体晶片的层叠体，其可以在不降低抛光性能的情况下进行光学终点检测以及半导体的抛光方法 晶圆使用它们。 本发明的抛光垫包括用于抛光垫的基板11，该抛光垫具有从表面向后穿透的通孔，安装在通孔中的透光部12，透光部包括水不溶性基质材料（1 ，2-聚丁二烯）和分散在水不溶性基质材料中的水溶性颗粒（β-环糊精），并且水溶性颗粒的体积百分比小于5体积％ 水不溶性基质材料和水溶性颗粒。 另外，本发明的研磨用层叠体在研磨垫的背面具有支撑层。 这些抛光垫和用于抛光的层压体可以在背面上包括固定层13。

公开(公告)号：US06976910B2

公开(公告)日：2005-12-20

申请号：US10849782

申请日：2004-05-21

申请人： Yukio Hosaka ,  Hiroshi Shiho ,  Kou Hasegawa ,  Nobuo Kawahashi

发明人： Yukio Hosaka ,  Hiroshi Shiho ,  Kou Hasegawa ,  Nobuo Kawahashi

IPC分类号： B24B37/20 ,  B24B37/24 ,  B24D3/00 ,  B24D13/14 ,  H01L21/304 ,  B24D11/00

CPC分类号： B24B37/26

摘要： A polishing pad comprising a recessed portion in the non-polishing surface. This polishing pad can prevent the surface to be polished of an object from being scratched.