公开(公告)号：US5747387A

公开(公告)日：1998-05-05

申请号：US519399

申请日：1995-08-25

申请人： Koutarou Koizumi ,  Sukeyoshi Tsunekawa ,  Kazuhiko Kawai ,  Maki Shimoda ,  Katsuhiko Itoh ,  Haruo Itoh ,  Akio Saito

发明人： Koutarou Koizumi ,  Sukeyoshi Tsunekawa ,  Kazuhiko Kawai ,  Maki Shimoda ,  Katsuhiko Itoh ,  Haruo Itoh ,  Akio Saito

IPC分类号： G03F7/42 ,  H01L21/027 ,  H01L21/302 ,  H01L21/304 ,  H01L21/306 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/00

CPC分类号： H01L21/02043 ,  G03F7/42 ,  H01L21/31138 ,  Y10S438/906

摘要： According to the present invention, the surface of the sample is cleaned with water immediately after ashing of the resist the quality of which has been changed through ion implantation by ozone-containing gas, or ozone-containing gas and ultraviolet ray, or the sample is cleaned with water without being exposed to the atmosphere after ashing, thereby allowing the number of residues to be reduced to 1/100, decreasing the load in cleaning process by solution, cutting down the semiconductor device production cost and improving the semiconductor device productivity.

摘要翻译： 根据本发明，在通过含臭氧气体或含臭氧气体和紫外线的离子注入改变了质量的抗蚀剂灰化后，样品的表面立即被清洗，或者样品是 在灰化后不用暴露于大气中，用水清洗，从而使残留物数减少到+ E，fra 1/100 + EE，减少溶液清洗过程中的负荷，减少半导体器件的生产成本，改善 半导体器件的生产率。