公开(公告)号：US5663893A

公开(公告)日：1997-09-02

申请号：US433730

申请日：1995-05-03

申请人： Kurt E. Wampler ,  Thomas L. Laidig

发明人： Kurt E. Wampler ,  Thomas L. Laidig

IPC分类号： G03F1/00 ,  G03F7/20 ,  H01L21/027 ,  G03F7/00 ,  H01J37/302

CPC分类号： G03F7/70441 ,  G03F1/36 ,  H01J2237/31762 ,  H01J2237/31769

摘要： A method for synthesizing correction features for an entire mask pattern that initially divides mask pattern data into tiles of data--each tile representing an overlapping section of the original mask pattern. Each of the tiles of data is sequentially processed through correction feature synthesis phases--each phase synthesizing a different type of correction feature. All of the correction features are synthesized for a given tile before synthesizing the correction features for the next tile. Each correction feature synthesis phase formats the data stored in the tile into a representation that provides information needed to synthesize the correction feature for the given phase. Methods for implementing edge bar and serif correction features synthesis phases are also described. The method for synthesizing external type edge bars is performed by oversizing feature data in the tile by an amount equal to the desired spacing of the external edge bar, formatting the oversized data into an edge representation and expanding each of the edges in the edge representation of the oversized data into edge bars having a predetermined width. Internal type of edge bars for the tile are synthesized by initially inverting feature data and then performing the same steps as for generating the external edge bars. The method for serif synthesis is performed by initially formatting tile data into a vertex representation, eliminating certain of the vertices not requiring serifs, synthesizing a positive serif for each convex corner and a negative vertex for each concave corner, and eliminating any disallowed serifs. Internal bars and negative serifs are "cut-out" of original tile data by performing geometric Boolean operations and external bars and positive serifs are concatenated with the "cut-out" tile data, equivalent to performing a geometric OR operation.

摘要翻译： 一种用于将最初将掩模图案数据划分成数据块的整个掩模图案的校正特征的方法，每个瓦片表示原始掩模图案的重叠部分。 通过校正特征合成阶段顺序地处理每个数据块，每个相合成不同类型的校正特征。 在合成下一个图块的修正特征之前，为给定的图块合成所有的修正特征。 每个校正特征合成阶段将存储在瓦片中的数据格式化为提供合成给定阶段的校正特征所需的信息的表示。 还描述了实现边缘条和衬线修正特征合成阶段的方法。 用于合成外部边缘条的方法是通过将平铺中的特征数据超过等于外部边缘条的期望间隔的量来执行的，将大尺寸数据格式化为边缘表示，并且将边缘表示中的每个边缘扩展 大尺寸数据成为具有预定宽度的边条。 通过初始反转特征数据然后执行与产生外边缘条相同的步骤来合成瓦片的边缘条的内部类型。 通过将瓦片数据初始格式化为顶点表示，消除某些不需要衬线的顶点，为每个凸角组合正衬线和每个凹角的负顶点，并消除任何不允许的衬线，执行衬线合成的方法。 内部条形和负衬里是通过执行几何布尔运算和外部条，原始瓦片数据“切出”，正衬线与“切出”瓦片数据相连，相当于执行几何或运算。

公开(公告)号：US5821014A

公开(公告)日：1998-10-13

申请号：US808587

申请日：1997-02-28

申请人： Jang Fung Chen ,  Kurt Wampler ,  Thomas L. Laidig

发明人： Jang Fung Chen ,  Kurt Wampler ,  Thomas L. Laidig

IPC分类号： G03F1/00 ,  G03F7/20 ,  H01L21/027 ,  G03F9/00

CPC分类号： G03F7/70125 ,  G03F1/36 ,  G03F7/70441

摘要： A method for providing scattering bars for optical proximity effect correction on a mask used in a lithographic process. Scattering bar spacing and characteristics are adjusted and varied along with primary feature edge location in order to control CD's of features that are spaced a distance greater than the minimum pitch of a lithographic process but less than a nominal distance for two feature edges having independent scattering bars.

摘要翻译： 一种用于在光刻工艺中使用的掩模上提供用于光学邻近效应校正的散射棒的方法。 散射条的间距和特性随主要特征边缘位置一起被调节和变化，以便控制CD的特征距离大于光刻过程的最小间距的距离，但小于具有独立散射条的两个特征边缘的标称距离 。