公开(公告)号：US20120015489A1

公开(公告)日：2012-01-19

申请号：US13181907

申请日：2011-07-13

申请人： Kwan-Heum LEE ,  Wook-Je KIM ,  Soon-Wook JUNG ,  Sang-Bom KANG ,  Ki-Hong KIM

发明人： Kwan-Heum LEE ,  Wook-Je KIM ,  Soon-Wook JUNG ,  Sang-Bom KANG ,  Ki-Hong KIM

IPC分类号： H01L21/8238 ,  H01L21/336 ,  B82Y40/00

CPC分类号： H01L21/823807 ,  H01L21/823814 ,  H01L29/7848

摘要： A semiconductor device and a method of manufacturing a semiconductor device are provided. In a method of manufacturing a semiconductor device, a gate structure is formed on a substrate. An epitaxial layer is formed on a top surface of the substrate adjacent to the gate structure. An elevated source/drain (ESD) layer and an impurity region are formed by implanting impurities and carbon in the epitaxial layer and an upper portion of the substrate using the gate structure as an ion implantation mask. A metal silicide layer is formed on the ESD layer.

摘要翻译： 提供半导体器件和制造半导体器件的方法。 在制造半导体器件的方法中，在衬底上形成栅极结构。 在与栅极结构相邻的衬底的顶表面上形成外延层。 通过使用栅极结构作为离子注入掩模，将外延层中的杂质和碳注入到衬底的上部，形成升高的源极/漏极（ESD）层和杂质区。 在ESD层上形成金属硅化物层。

公开(公告)号：US20120015490A1

公开(公告)日：2012-01-19

申请号：US13183630

申请日：2011-07-15

申请人： Kwan-Heum LEE ,  Soon-Wook JUNG ,  Jung-Hyun PARK ,  Wook-Je KIM ,  Jong-Sang BAN

发明人： Kwan-Heum LEE ,  Soon-Wook JUNG ,  Jung-Hyun PARK ,  Wook-Je KIM ,  Jong-Sang BAN

IPC分类号： H01L21/8238 ,  H01L21/336

CPC分类号： H01L21/823814 ,  H01L21/823864 ,  H01L29/7848

摘要： A method of manufacturing a semiconductor device includes forming a gate structure on a substrate; forming a sacrificial spacer may be formed on a sidewall of the gate substrate; implanting first impurities into portions of the substrate by a first ion implantation process using the gate structure and the sacrificial spacer as ion implantation masks to form source and drain regions; removing the sacrificial spacer; and implanting second impurities and carbon atoms into portions of the substrate by a second ion implantation process using the gate structure as an ion implantation mask to form source and drain extension regions and carbon doping regions, respectively.

摘要翻译： 一种制造半导体器件的方法包括在衬底上形成栅极结构; 形成牺牲隔离物可以形成在栅极衬底的侧壁上; 通过使用栅极结构和牺牲隔离物作为离子注入掩模的第一离子注入工艺将第一杂质注入到衬底的部分中以形成源区和漏区; 去除牺牲隔离物; 以及通过使用所述栅极结构作为离子注入掩模的第二离子注入工艺将第二杂质和碳原子注入到所述衬底的部分中，以分别形成源极和漏极延伸区域和碳掺杂区域。

公开(公告)号：US20160005806A1

公开(公告)日：2016-01-07

申请号：US14858069

申请日：2015-09-18

申请人： Hyun-Jeong YANG ,  Soon-Wook JUNG ,  Bong-Jin KUH ,  Wan-Don KIM ,  Byung-Hong CHUNG ,  Yong-Suk TAK

发明人： Hyun-Jeong YANG ,  Soon-Wook JUNG ,  Bong-Jin KUH ,  Wan-Don KIM ,  Byung-Hong CHUNG ,  Yong-Suk TAK

IPC分类号： H01L49/02

CPC分类号： H01L28/60 ,  H01L27/10852 ,  H01L28/87 ,  H01L28/91

摘要： A semiconductor device includes a plurality of lower electrodes having a vertical length greater than a horizontal width on a substrate, a supporter disposed between the lower electrodes, an upper electrode disposed on the lower electrodes, and a capacitor dielectric layer disposed between the lower electrodes and the upper electrode. The supporter includes a first element, a second element, and oxygen, an oxide of the second element has a higher band gap energy than an oxide of the first element, and the content of the second element in the supporter is from about 10 at % to 90 at %.

摘要翻译： 半导体器件包括多个下电极，其垂直长度大于衬底上的水平宽度，设置在下电极之间的支撑体，设置在下电极上的上电极，以及设置在下电极和下电极之间的电容器电介质层 上电极。 支撑体包括第一元件，第二元件和氧，第二元件的氧化物具有比第一元件的氧化物更高的带隙能量，并且支撑件中的第二元件的含量为约10原子％ 至90原子％。

公开(公告)号：US20140138794A1

公开(公告)日：2014-05-22

申请号：US14066000

申请日：2013-10-29

申请人： Hyun-Jeong YANG ,  Soon-Wook JUNG ,  Bong-Jin KUH ,  Wan-Don KIM ,  Byung-Hong CHUNG ,  Yong-Suk TAK

发明人： Hyun-Jeong YANG ,  Soon-Wook JUNG ,  Bong-Jin KUH ,  Wan-Don KIM ,  Byung-Hong CHUNG ,  Yong-Suk TAK

IPC分类号： H01L49/02

CPC分类号： H01L28/60 ,  H01L27/10852 ,  H01L28/87 ,  H01L28/91

摘要： A semiconductor device includes a plurality of lower electrodes having a vertical length greater than a horizontal width on a substrate, a supporter disposed between the lower electrodes, an upper electrode disposed on the lower electrodes, and a capacitor dielectric layer disposed between the lower electrodes and the upper electrode. The supporter includes a first element, a second element, and oxygen, an oxide of the second element has a higher band gap energy than an oxide of the first element, and the content of the second element in the supporter is from about 10 at % to 90 at %.

摘要翻译： 半导体器件包括多个下电极，其垂直长度大于衬底上的水平宽度，设置在下电极之间的支撑体，设置在下电极上的上电极，以及设置在下电极和下电极之间的电容器电介质层 上电极。 支撑体包括第一元件，第二元件和氧，第二元件的氧化物具有比第一元件的氧化物更高的带隙能量，并且支撑件中的第二元件的含量为约10原子％ 至90原子％。