摘要:
A method comprising transforming Schizosaccharomyces pombe with a deletion cassette, constructed by four-round serial PCR, block PCR or total gene synthesis, containing a homologous recombination site is provided for preparing gene-targeted heterozygous deletion Schizosaccharomyces pombe. Also provided are gene-targeted hetero2ygous deletion Schizosaccharomyces pombe mutants prepared by the method, and a library of gene-targeted heterozygous deletion Schizosaccharomyces pombe mutants. Further, the library is useful in constructing a method and a kit for screening a drug's modes of action.
摘要:
A method comprising transforming Schizosaccharomyces pombe with a deletion cassette, constructed by four-round serial PCR, block PCR or total gene synthesis, containing a homologous recombination site is provided for preparing gene-targeted heterozygous deletion Schizosaccharomyces pombe. Also provided are gene-targeted hetero2ygous deletion Schizosaccharomyces pombe mutants prepared by the method, and a library of gene-targeted heterozygous deletion Schizosaccharomyces pombe mutants. Further, the library is useful in constructing a method and a kit for screening a drug's modes of action.
摘要:
A method of fabricating a halftone phase shift mask, comprising: forming a structure by sequentially stacking a light blocking layer pattern defining a side surface and a phase shift layer pattern over a light transmitting substrate; and treating the structure with heat to make the phase shift layer pattern flow and cover the side surface of the light blocking layer pattern.
摘要:
A method of fabricating a halftone phase shift mask, comprising: forming a structure by sequentially stacking a light blocking layer pattern defining a side surface and a phase shift layer pattern over a light transmitting substrate; and treating the structure with heat to make the phase shift layer pattern flow and cover the side surface of the light blocking layer pattern.
摘要:
Provided are a binary mask, a method for fabricating the binary mask, and a method for fabricating a fine pattern of semiconductor device. In the method for fabricating the fine pattern, a binary mask including phase shift layer patterns is prepared on a transparent substrate. A semiconductor substrate including an etch objective layer and a resist layer is prepared. An exposure operation using the binary mask and a light source of a short wavelength is performed to transfer the phase shift layer patterns of the binary mask onto the resist layer of the semiconductor substrate. The resist layer to which the patterns have been transferred is developed to form resist layer patterns selectively exposing the etch objective layer. Exposed portions of the etch objective layer are etched using the resist layer patterns as an etch mask to form etch objective layer patterns. The resist layer patterns are removed.