公开(公告)号：US06664177B1

公开(公告)日：2003-12-16

申请号：US10062645

申请日：2002-02-01

申请人： Kwang-Ming Lin ,  Chung-Hung Lu ,  Szu-An Wu ,  Ya-Li Tai ,  Kun-Yi Liu

发明人： Kwang-Ming Lin ,  Chung-Hung Lu ,  Szu-An Wu ,  Ya-Li Tai ,  Kun-Yi Liu

IPC分类号： H01L214763

CPC分类号： H01L21/31144 ,  H01L21/0276 ,  H01L21/76807

摘要： This invention relates to a method of fabrication used for semiconductor integrated circuit devices, and more specifically, to improve the photolithography processing window of a multi-layered dual damascene process by using a dielectric anti-reflective coating, DARC, comprised of multiple layers of silicon oxynitride, SiON, with varying k, dielectric constant values and thickness, to reduce reflectivity and improve light absorption. By varying both the thickness and the dielectric constant of the layers, the optical properties of light absorption, refractive indices, and light reflection are optimized.

摘要翻译： 本发明涉及用于半导体集成电路器件的制造方法，更具体地说，涉及通过使用由多层硅构成的介电抗反射涂层DARC来改进多层双镶嵌工艺的光刻处理窗口 氧氮化物，SiON，具有不同的k，介电常数值和厚度，以减少反射率并改善光吸收。 通过改变层的厚度和介电常数，优化光吸收，折射率和光反射的光学性质。