公开(公告)号：US07298010B1

公开(公告)日：2007-11-20

申请号：US11358391

申请日：2006-02-21

申请人： Kwok K. Ma

发明人： Kwok K. Ma

IPC分类号： H01L23/62

CPC分类号： H01L23/556 ,  H01L29/78 ,  H01L2924/0002 ,  H01L2924/3011 ,  H03K19/00338 ,  H01L2924/00

摘要： A composite transistor is disclosed for use in radiation hardening a CMOS IC formed on an SOI or bulk semiconductor substrate. The composite transistor has a circuit transistor and a blocking transistor connected in series with a common gate connection. A body terminal of the blocking transistor is connected only to a source terminal thereof, and to no other connection point. The blocking transistor acts to prevent a single-event transient (SET) occurring in the circuit transistor from being coupled outside the composite transistor. Similarly, when a SET occurs in the blocking transistor, the circuit transistor prevents the SET from being coupled outside the composite transistor. N-type and P-type composite transistors can be used for each and every transistor in the CMOS IC to radiation harden the IC, and can be used to form inverters and transmission gates which are the building blocks of CMOS ICs.

摘要翻译： 公开了用于辐射硬化形成在SOI或体半导体衬底上的CMOS IC的复合晶体管。 复合晶体管具有与公共栅极连接串联的电路晶体管和阻塞晶体管。 阻塞晶体管的主体端子仅连接到其源极端子，而不连接到其它连接点。 阻塞晶体管用于防止在电路晶体管中发生的单事件瞬态（SET）耦合到复合晶体管外部。 类似地，当在阻塞晶体管中发生SET时，电路晶体管防止SET耦合到复合晶体管的外部。 可以使用CMOS IC中的每个晶体管的N型和P型复合晶体管来辐射硬化IC，并且可以用于形成作为CMOS IC的构建块的反相器和传输门。