公开(公告)号：US09799653B2

公开(公告)日：2017-10-24

申请号：US15181110

申请日：2016-06-13

申请人： Aeroflex Colorado Springs Inc.

发明人： David B. Kerwin ,  Joseph M. Benedetto

IPC分类号： H01L29/66 ,  H01L21/20 ,  H01L27/092 ,  H01L21/18 ,  H01L23/552 ,  H01L23/556 ,  H01L29/10

CPC分类号： H01L27/0921 ,  H01L21/187 ,  H01L23/552 ,  H01L23/556 ,  H01L29/1087

摘要： A bonded wafer structure having a handle wafer, a device wafer, and an interface region with an abrupt transition between the conductivity profile of the device wafer and the handle wafer is used for making semiconductor devices. The improved doping profile of the bonded wafer structure is well suited for use in the manufacture of integrated circuits. The bonded wafer structure is especially suited for making radiation-hardened integrated circuits.

公开(公告)号：US20170243935A1

公开(公告)日：2017-08-24

申请号：US15295779

申请日：2016-10-17

申请人： General Electric Company

发明人： Alexander Viktorovich Bolotnikov ,  Ljubisa Dragoljub Stevanovic ,  Peter Almern Losee

IPC分类号： H01L29/06 ,  G06F17/50 ,  H01L23/556 ,  H01L29/16 ,  H01L23/552

CPC分类号： H01L29/06 ,  G06F17/5036 ,  G06F17/5068 ,  G06F2217/06 ,  H01L23/552 ,  H01L23/556 ,  H01L29/1608 ,  H01L29/66068 ,  H01L29/732 ,  H01L29/7395 ,  H01L29/745 ,  H01L29/7802 ,  H01L29/7813 ,  H01L29/8083 ,  H01L29/861 ,  H01L29/8611 ,  H01L29/868 ,  H01L29/872

摘要： In one embodiment, a method of manufacturing a silicon-carbide (SiC) device includes receiving a selection of a specific terrestrial cosmic ray (TCR) rating at a specific applied voltage, determining a breakdown voltage for the SiC device based at least on the specific TCR rating at the specific applied voltage, determining drift layer design parameters based at least on the breakdown voltage. The drift layer design parameters include doping concentration and thickness of the drift layer. The method also includes fabricating the SiC device having a drift layer with the determined drift layer design parameters. The SiC device has the specific TCR rating at the specific applied voltage.

公开(公告)号：US20160148885A1

公开(公告)日：2016-05-26

申请号：US14899378

申请日：2013-06-19

申请人： SENJU METAL INDUSTRY CO., LTD.

发明人： Hiroyoshi Kawasaki ,  Tomohiko Hashimoto ,  Atsushi Ikeda ,  Takahiro Roppongi ,  Daisuke Soma ,  Isamu Sato ,  Yuji Kawamata

IPC分类号： H01L23/00 ,  C22C13/00 ,  C22C9/00 ,  H05K3/34 ,  B23K35/02 ,  B23K35/30 ,  B23K35/26 ,  H01L23/498 ,  C22C43/00

CPC分类号： H01L24/13 ,  B22F1/025 ,  B23K35/0244 ,  B23K35/26 ,  B23K35/262 ,  B23K35/30 ,  B23K35/302 ,  C22C9/00 ,  C22C13/00 ,  C22C43/00 ,  C23C28/021 ,  H01L23/49816 ,  H01L23/556 ,  H01L24/11 ,  H01L24/14 ,  H01L2224/111 ,  H01L2224/1112 ,  H01L2224/13014 ,  H01L2224/13016 ,  H01L2224/13111 ,  H01L2224/13147 ,  H01L2224/13347 ,  H01L2224/13411 ,  H01L2224/13611 ,  H01L2224/13655 ,  H01L2224/13657 ,  H01L2224/16145 ,  H01L2224/16227 ,  H01L2924/1434 ,  H01L2924/3841 ,  H05K3/3457 ,  H05K2203/041 ,  H01L2924/01082 ,  H01L2924/01083 ,  H01L2924/01047 ,  H01L2924/01029 ,  H01L2924/01049 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/01028 ,  H01L2924/01027 ,  H01L2924/01051 ,  H01L2924/01032 ,  H01L2924/01015 ,  H01L2924/01026 ,  H01L2924/01079 ,  H01L2924/01092 ,  H01L2924/0109 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01048 ,  H01L2924/01016 ,  H01L2924/01203 ,  H01L2924/01204 ,  H01L2924/0103

摘要： A Cu core ball is provided that prevents any soft errors and decreases any connection failure. The Cu core ball includes a solder plating film formed on the surface of a Cu ball that is a Sn solder plating film or is made of a lead-free solder alloy, a principal ingredient of which is Sn. The solder plating film contains U of 5 ppb or less and Th of 5 ppb or less. The Cu ball has a purity of not less than 99.9% Cu and not more than 99.995% Cu. Pb and/or Bi contents therein are at a total of 1 ppm or more. The sphericity thereof is 0.95 or more. The obtained Cu core ball has an α dose of 0.0200 cph/cm2 or less.

摘要翻译： 提供铜芯球，防止任何软错误并减少任何连接故障。 铜芯球包括在作为Sn焊料镀覆膜的Cu球的表面上形成的焊锡镀膜，或者由主要成分为Sn的无铅焊料合金制成。 焊锡镀膜含有5ppb以下的U，5ppb以下的U。 Cu球的纯度为99.9％以上，Cu不大于99.995％。 其中Pb和/或Bi含量总共为1ppm以上。 其球形度为0.95以上。 得到的Cu芯球的α剂量为0.0200cph / cm 2以下。

公开(公告)号：US08999764B2

公开(公告)日：2015-04-07

申请号：US11836819

申请日：2007-08-10

申请人： Mukta G. Farooq ,  Ian D. Melville ,  Kevin S. Petrarca ,  Kenneth P. Rodbell

发明人： Mukta G. Farooq ,  Ian D. Melville ,  Kevin S. Petrarca ,  Kenneth P. Rodbell

IPC分类号： H01L21/00 ,  H01L23/532 ,  H01L23/556

CPC分类号： H01L23/5329 ,  H01L23/556 ,  H01L2924/0002 ,  Y10S438/958 ,  Y10S438/967 ,  H01L2924/00

摘要： Methods of blocking ionizing radiation to reduce soft errors and resulting IC chips are disclosed. One embodiment includes forming a front end of line (FEOL) for an integrated circuit (IC) chip; and forming at least one back end of line (BEOL) dielectric layer including ionizing radiation blocking material therein. Another embodiment includes forming a front end of line (FEOL) for an integrated circuit (IC) chip; and forming an ionizing radiation blocking layer positioned in a back end of line (BEOL) of the IC chip. The ionizing radiation blocking material or layer absorbs ionizing radiation and reduces soft errors within the IC chip.

摘要翻译： 公开了阻止电离辐射以减少软错误的方法和产生的IC芯片。 一个实施例包括形成用于集成电路（IC）芯片的线路前端（FEOL）; 以及在其中形成包括其中的电离辐射阻挡材料的至少一个后端线（BEOL）电介质层。 另一实施例包括形成用于集成电路（IC）芯片的线路前端（FEOL）; 以及形成位于IC芯片的后端（BEOL）的电离辐射阻挡层。 电离辐射阻挡材料或层吸收电离辐射并减少IC芯片内的软误差。

公开(公告)号：US08815614B2

公开(公告)日：2014-08-26

申请号：US13483124

申请日：2012-05-30

申请人： John C. Rodgers

发明人： John C. Rodgers

IPC分类号： H01L21/00 ,  H04B1/10 ,  H01L23/556 ,  H01L23/64

CPC分类号： H01L23/642 ,  H01L23/556 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2924/00014

摘要： A system and method for improving the prompt dose radiation response of mixed-signal integrated circuits is disclosed. An internal analog circuit inside a mixed-signal integrated circuit generates an internal analog reference voltage that has been used for various purposes in the integrated circuit. At least one external capacitor is added either internal or external to a device package of the integrated circuit. The external capacitor reduces any change in the internal reference voltage due to prompt dose radiation by stabilizing the internal reference voltage and thus improves prompt dose radiation response of mixed-signal integrated circuits. A much greater value of capacitance may be provided without increase in dielectric rupture suceptability or decrease in manufacturing yield which may be associated with added on-chip capacitance. This increased capacitance primarily reduce the amount of disturbance caused to the internal node during a prompt dose radiation event.

摘要翻译： 公开了一种用于改善混合信号集成电路的迅速剂量辐射响应的系统和方法。 混合信号集成电路内的内部模拟电路产生已经用于集成电路中的各种目的的内部模拟参考电压。 在集成电路的器件封装内部或外部添加至少一个外部电容器。 外部电容器通过稳定内部参考电压，因迅速的剂量辐射而减小了内部参考电压的变化，从而改善了混合信号集成电路的迅速剂量辐射响应。 可以提供更大的电容值，而不会增加介电破裂的可接受性或降低制造成品率，这可能与添加的片上电容有关。 这种增加的电容主要减少在迅速剂量辐射事件期间对内部节点造成的干扰的量。

公开(公告)号：US08785217B2

公开(公告)日：2014-07-22

申请号：US13230798

申请日：2011-09-12

申请人： Michael A. Gaynes ,  Michael S. Gordon ,  Nancy C. LaBianca ,  Kenneth P. Rodbell

发明人： Michael A. Gaynes ,  Michael S. Gordon ,  Nancy C. LaBianca ,  Kenneth P. Rodbell

IPC分类号： G01R31/26 ,  H01L21/66

CPC分类号： H01L23/556 ,  G01R31/2881 ,  G06F17/5036 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2924/00

摘要： An energy distribution of soft error-inducing radiation likely to be encountered by an electronic circuit during operation is determined. A tuned radiation source having a source energy distribution similar to the determined energy distribution is prepared. The electronic circuit is tested using the tuned radiation source.

摘要翻译： 确定在操作期间可能由电子电路遇到的软误差诱发辐射的能量分布。 制备具有与所确定的能量分布相似的源能分布的调谐辐射源。 使用调谐的辐射源测试电子电路。

公开(公告)号：US20140197404A1

公开(公告)日：2014-07-17

申请号：US13806718

申请日：2012-09-21

申请人： Shenzhen China Star Optoelectronics Technology Co.

发明人： Chenglung Chiang ,  Polin Chen

IPC分类号： H01L27/12

CPC分类号： H01L27/1225 ,  H01L23/552 ,  H01L23/556 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/7869 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present invention relates to a thin-film transistor (TFT) active device. The TFT active device includes: a gate electrode; a gate insulation layer covering the gate electrode; an oxide semiconductor layer formed on the gate insulation layer; a first protection layer formed on the oxide semiconductor layer; a source/drain electrode electrically connected with the oxide semiconductor layer; and a second protection layer covering the source/drain electrode. At least one of the gate insulation layer, the first protection layer, and the second protection layer is made of a nitride of silicon and has a refractive index between 2.0-3.0. The TFT active device according to the present invention helps suppressing diffusion of metal ions from a metal electrode and reducing hydrogen content of the GI layer, the ES layer, or the PV layer so as to effectively improve the stability of the manufacture operation of TFT.

摘要翻译： 本发明涉及薄膜晶体管（TFT）有源器件。 TFT有源器件包括：栅电极; 覆盖栅电极的栅极绝缘层; 形成在所述栅极绝缘层上的氧化物半导体层; 形成在氧化物半导体层上的第一保护层; 与氧化物半导体层电连接的源极/漏极; 以及覆盖源极/漏极的第二保护层。 栅绝缘层，第一保护层和第二保护层中的至少一个由硅的氮化物制成，折射率在2.0-3.0之间。 根据本发明的TFT有源器件有助于抑制金属离子从金属电极的扩散并降低GI层，ES层或PV层的氢含量，从而有效地提高TFT的制造操作的稳定性。

公开(公告)号：US08569876B2

公开(公告)日：2013-10-29

申请号：US11603935

申请日：2006-11-22

申请人： Andrey Grinman ,  David Ovrutsky ,  Charles Rosenstein ,  Vage Oganesian

发明人： Andrey Grinman ,  David Ovrutsky ,  Charles Rosenstein ,  Vage Oganesian

IPC分类号： H01L23/50

CPC分类号： H01L23/3128 ,  H01L23/29 ,  H01L23/3114 ,  H01L23/3135 ,  H01L23/49816 ,  H01L23/49827 ,  H01L23/4985 ,  H01L23/556 ,  H01L24/17 ,  H01L25/0657 ,  H01L25/105 ,  H01L2224/16148 ,  H01L2224/274 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/1058 ,  H01L2225/1064 ,  H01L2924/01019 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/14 ,  H01L2924/1436 ,  H01L2924/3025 ,  H01L2924/00

摘要： A chip-sized, wafer level packaged device including a portion of a semiconductor wafer including a device, at least one packaging layer containing silicon and formed over the device, a first ball grid array formed over a surface of the at least one packaging layer and being electrically connected to the device and a second ball grid array formed over a surface of the portion of the semiconductor wafer and being electrically connected to the device.

公开(公告)号：US20120122260A1

公开(公告)日：2012-05-17

申请号：US13357728

申请日：2012-01-25

申请人： Ethan H. Cannon ,  Michael J. Hauser ,  Timothy D. Sullivan

发明人： Ethan H. Cannon ,  Michael J. Hauser ,  Timothy D. Sullivan

IPC分类号： H01L31/18

CPC分类号： H01L31/115 ,  H01L23/552 ,  H01L23/556 ,  H01L25/0657 ,  H01L2924/0002 ,  H01L2924/00

摘要： An array of radiation sensors or detectors is integrated within a three-dimensional semiconductor IC. The sensor array is located relatively close to the device layer of a circuit (e.g., a microprocessor) to be protected from the adverse effects of the ionizing radiation particles. As such, the location where the radiation particles intersect the device layer can be calculated with coarse precision (e.g., to within 10 s of microns).

摘要翻译： 辐射传感器或检测器阵列集成在三维半导体IC内。 传感器阵列相对靠近电路（例如，微处理器）的器件层定位，以防止电离辐射粒子的不利影响。 因此，辐射粒子与器件层相交的位置可以用粗精度（例如，在10微米以内）来计算。

公开(公告)号：US08120131B2

公开(公告)日：2012-02-21

申请号：US12547519

申请日：2009-08-26

申请人： Ethan H. Cannon ,  Michael J. Hauser ,  Timothy D. Sullivan

发明人： Ethan H. Cannon ,  Michael J. Hauser ,  Timothy D. Sullivan

IPC分类号： H01L31/02

CPC分类号： H01L31/115 ,  H01L23/552 ,  H01L23/556 ,  H01L25/0657 ,  H01L2924/0002 ,  H01L2924/00

摘要： An array of radiation sensors or detectors is integrated within a three-dimensional semiconductor IC. The sensor array is located relatively close to the device layer of a circuit (e.g., a microprocessor) to be protected from the adverse effects of the ionizing radiation particles. As such, the location where the radiation particles intersect the device layer can be calculated with coarse precision (e.g., to within 10 s of microns).

摘要翻译： 辐射传感器或检测器阵列集成在三维半导体IC内。 传感器阵列相对靠近电路（例如，微处理器）的器件层定位，以防止电离辐射粒子的不利影响。 因此，辐射粒子与器件层相交的位置可以用粗精度（例如，在10微米以内）来计算。