Temperature detecting apparatus
    1.
    发明授权
    Temperature detecting apparatus 有权
    温度检测装置

    公开(公告)号:US07573340B2

    公开(公告)日:2009-08-11

    申请号:US11580188

    申请日:2006-10-13

    Applicant: Kyong-Ha Lee

    Inventor: Kyong-Ha Lee

    CPC classification number: G01K7/32 G01K7/346

    Abstract: There is provided a temperature detecting apparatus for improving operational characteristics, which vary according to the temperature, of elements in a semiconductor memory device. The temperature detecting apparatus of the present invention includes: a first oscillator that outputs a first oscillating signal in response to a first oscillator reset signal, the first oscillating signal being independent of the temperature; a second oscillator that outputs a second oscillating signal in response to a second oscillator enable signal, the second oscillating signal being dependent on the temperature; a comparator that compares an output pulse of the first oscillator with an output pulse of the second oscillator and then outputs a temperature detection comparison signal; and an output unit that outputs a temperature detection signal in response to an input of the temperature detection comparison signals.

    Abstract translation: 提供一种温度检测装置,用于改善半导体存储器件中元件的温度变化的操作特性。 本发明的温度检测装置包括:第一振荡器,响应于第一振荡器复位信号输出第一振荡信号,第一振荡信号独立于温度; 第二振荡器,其响应于第二振荡器使能信号输出第二振荡信号,所述第二振荡信号取决于所述温度; 比较器,将第一振荡器的输出脉冲与第二振荡器的输出脉冲进行比较,然后输出温度检测比较信号; 以及输出单元,其响应于温度检测比较信号的输入而输出温度检测信号。

    Circuit and method for selecting test self-refresh period of semiconductor memory device
    2.
    发明申请
    Circuit and method for selecting test self-refresh period of semiconductor memory device 有权
    用于选择半导体存储器件测试自刷新周期的电路和方法

    公开(公告)号:US20080062799A1

    公开(公告)日:2008-03-13

    申请号:US11976356

    申请日:2007-10-24

    Applicant: Kyong-Ha Lee

    Inventor: Kyong-Ha Lee

    Abstract: The present invention provides a self-refresh period adaptable for testing cells that are weak against hot temperature stress. An apparatus for controlling a self-refresh operation in a semiconductor memory device includes a first period selector for generating one of a period-fixed pulse signal having a constant period and a period-variable pulse signal having a variable period based on a temperature of the semiconductor memory device in a test mode; and a self-refresh block for performing the self-refresh operation in response to an output of the first period selector.

    Abstract translation: 本发明提供适用于测试对热温度应力弱的细胞的自刷新周期。 一种用于控制半导体存储器件中的自刷新操作的装置包括:第一周期选择器,用于产生具有恒定周期的周期固定脉冲信号和基于温度的可变周期的周期可变脉冲信号 半导体存储器件处于测试模式; 以及自刷新块,用于响应于第一周期选择器的输出执行自刷新操作。

    Circuit for outputting data of semiconductor memory apparatus
    3.
    发明授权
    Circuit for outputting data of semiconductor memory apparatus 失效
    用于输出半导体存储装置的数据的电路

    公开(公告)号:US07633832B2

    公开(公告)日:2009-12-15

    申请号:US11826923

    申请日:2007-07-19

    Applicant: Kyong-Ha Lee

    Inventor: Kyong-Ha Lee

    Abstract: A circuit for outputting data of a semiconductor memory apparatus is provided. A circuit for outputting data of a semiconductor memory apparatus according to an embodiment of the present invention includes a data clock generating unit that generates a data clock, a delayed clock generating unit that receives the data clock and outputs a delayed clock according to a change in an external voltage level, and a clock synchronizing unit that outputs data synchronized with the delayed clock as output data.

    Abstract translation: 提供一种用于输出半导体存储装置的数据的电路。 根据本发明实施例的用于输出半导体存储装置的数据的电路包括:数据时钟产生单元,用于产生数据时钟;延迟时钟产生单元,用于接收数据时钟并输出延迟时钟, 外部电压电平和时钟同步单元,其输出与延迟时钟同步的数据作为输出数据。

    Circuit for outputting data of semiconductor memory apparatus
    4.
    发明申请
    Circuit for outputting data of semiconductor memory apparatus 失效
    用于输出半导体存储装置的数据的电路

    公开(公告)号:US20080151680A1

    公开(公告)日:2008-06-26

    申请号:US11826923

    申请日:2007-07-19

    Applicant: Kyong-Ha Lee

    Inventor: Kyong-Ha Lee

    Abstract: A circuit for outputting data of a semiconductor memory apparatus is provided. A circuit for outputting data of a semiconductor memory apparatus according to an embodiment of the present invention includes a data clock generating unit that generates a data clock, a delayed clock generating unit that receives the data clock and outputs a delayed clock according to a change in an external voltage level, and a clock synchronizing unit that outputs data synchronized with the delayed clock as output data.

    Abstract translation: 提供一种用于输出半导体存储装置的数据的电路。 根据本发明实施例的用于输出半导体存储装置的数据的电路包括:数据时钟产生单元,用于产生数据时钟;延迟时钟产生单元,用于接收数据时钟并输出延迟时钟, 外部电压电平和时钟同步单元,其输出与延迟时钟同步的数据作为输出数据。

    Apparatus and method of detecting refresh cycle of semiconductor memory
    5.
    发明申请
    Apparatus and method of detecting refresh cycle of semiconductor memory 失效
    检测半导体存储器的刷新周期的装置和方法

    公开(公告)号:US20070237017A1

    公开(公告)日:2007-10-11

    申请号:US11638363

    申请日:2006-12-14

    Applicant: Kyong-Ha Lee

    Inventor: Kyong-Ha Lee

    CPC classification number: G11C11/406 G11C11/40615 G11C2211/4061

    Abstract: An apparatus for detecting a refresh period of a semiconductor memory includes a signal generating unit that generates a plurality of signal pairs, each of which includes one among a plurality of first reference signals that are respectively generated with the same timing as first to (N−1)-th pulses of a refresh period signal of order N, and one among a plurality of second reference signals that correspond to the plurality of first reference signals and are respectively generated with the same timing as second to N-th pulses of the refresh period signal. A refresh period detecting unit detects the period of the refresh period signal using one among the plurality of signal pairs.

    Abstract translation: 一种用于检测半导体存储器的刷新周期的装置,包括产生多个信号对的信号产生单元,每个信号对都包括分别以与第一至第(N)个相同的时序生成的多个第一参考信号之一, 1次刷新周期信号的序列N的脉冲,以及与多个第一参考信号相对应的多个第二参考信号中的一个脉冲,并分别以与刷新的第二至第N个脉冲相同的定时生成 周期信号。 刷新周期检测单元使用多个信号对中的一个来检测刷新周期信号的周期。

    Apparatus and method of detecting refresh cycle of semiconductor memory
    6.
    发明授权
    Apparatus and method of detecting refresh cycle of semiconductor memory 失效
    检测半导体存储器的刷新周期的装置和方法

    公开(公告)号:US07551504B2

    公开(公告)日:2009-06-23

    申请号:US11638363

    申请日:2006-12-14

    Applicant: Kyong-Ha Lee

    Inventor: Kyong-Ha Lee

    CPC classification number: G11C11/406 G11C11/40615 G11C2211/4061

    Abstract: An apparatus for detecting a refresh period of a semiconductor memory includes a signal generating unit that generates a plurality of signal pairs, each of which includes one among a plurality of first reference signals that are respectively generated with the same timing as first to (N−1)-th pulses of a refresh period signal of order N, and one among a plurality of second reference signals that correspond to the plurality of first reference signals and are respectively generated with the same timing as second to N-th pulses of the refresh period signal. A refresh period detecting unit detects the period of the refresh period signal using one among the plurality of signal pairs.

    Abstract translation: 一种用于检测半导体存储器的刷新周期的装置,包括产生多个信号对的信号产生单元,每个信号对都包括分别以与第一至第(N)个相同的时序生成的多个第一参考信号之一, 1次刷新周期信号的序列N的脉冲,以及与多个第一参考信号相对应的多个第二参考信号中的一个脉冲,并分别以与刷新的第二至第N个脉冲相同的定时生成 周期信号。 刷新周期检测单元使用多个信号对中的一个来检测刷新周期信号的周期。

    Circuit and method for selecting test self-refresh period of semiconductor memory device
    7.
    发明授权
    Circuit and method for selecting test self-refresh period of semiconductor memory device 有权
    用于选择半导体存储器件测试自刷新周期的电路和方法

    公开(公告)号:US07548478B2

    公开(公告)日:2009-06-16

    申请号:US11976356

    申请日:2007-10-24

    Applicant: Kyong-Ha Lee

    Inventor: Kyong-Ha Lee

    Abstract: The present invention provides a self-refresh period adaptable for testing cells that are weak against hot temperature stress. An apparatus for controlling a self-refresh operation in a semiconductor memory device includes a first period selector for generating one of a period-fixed pulse signal having a constant period and a period-variable pulse signal having a variable period based on a temperature of the semiconductor memory device in a test mode; and a self-refresh block for performing the self-refresh operation in response to an output of the first period selector.

    Abstract translation: 本发明提供适用于测试对热温度应力弱的细胞的自刷新周期。 一种用于控制半导体存储器件中的自刷新操作的装置包括:第一周期选择器,用于产生具有恒定周期的周期固定脉冲信号和基于温度的可变周期的周期可变脉冲信号 半导体存储器件处于测试模式; 以及自刷新块,用于响应于第一周期选择器的输出执行自刷新操作。

    Circuit and method for selecting test self-refresh period of semiconductor memory device
    9.
    发明授权
    Circuit and method for selecting test self-refresh period of semiconductor memory device 有权
    用于选择半导体存储器件测试自刷新周期的电路和方法

    公开(公告)号:US07301841B2

    公开(公告)日:2007-11-27

    申请号:US11320650

    申请日:2005-12-30

    Applicant: Kyong-Ha Lee

    Inventor: Kyong-Ha Lee

    Abstract: The present invention provides a self-refresh period adaptable for testing cells that are weak against hot temperature stress. An apparatus for controlling a self-refresh operation in a semiconductor memory device includes a first period selector for generating one of a period-fixed pulse signal having a constant period and a period-variable pulse signal having a variable period based on a temperature of the semiconductor memory device in a test mode; and a self-refresh block for performing the self-refresh operation in response to an output of the first period selector.

    Abstract translation: 本发明提供适用于测试对热温度应力弱的细胞的自刷新周期。 一种用于控制半导体存储器件中的自刷新操作的装置包括:第一周期选择器,用于产生具有恒定周期的周期固定脉冲信号和基于温度的可变周期的周期可变脉冲信号 半导体存储器件处于测试模式; 以及自刷新块,用于响应于第一周期选择器的输出执行自刷新操作。

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