公开(公告)号：US09035319B2

公开(公告)日：2015-05-19

申请号：US13967923

申请日：2013-08-15

申请人： Kyungpook National University Industry-Academic Cooperation Foundation

发明人： Jung-hee Lee ,  Ki-sik Im ,  Dong-seok Kim ,  Hee-sung Kang ,  Dong-hyeok Son

IPC分类号： H01L29/15 ,  H01L31/0256 ,  H01L21/20 ,  H01L21/36 ,  H01L29/20 ,  H01L21/02 ,  H01L29/739 ,  H01L29/78

CPC分类号： H01L29/2003 ,  H01L21/02365 ,  H01L29/7391 ,  H01L29/785

摘要： The present disclosure relates to nitride semiconductor and a fabricating method thereof, and a nitride semiconductor according to an exemplary embodiment of the present disclosure includes a nitride based first and second electrode placed with a distance on a substrate, a nitride based channel layer which connects the first and second electrode, an insulating layer which covers the channel layer, and a third electrode which is formed to cover the insulating layer on the insulating layer.

摘要翻译： 本公开涉及氮化物半导体及其制造方法，根据本公开的示例性实施方案的氮化物半导体包括在衬底上放置一定距离的基于氮化物的第一和第二电极，将氮化物基沟道层连接 第一和第二电极，覆盖沟道层的绝缘层和形成为覆盖绝缘层上的绝缘层的第三电极。