公开(公告)号：US20230268731A1

公开(公告)日：2023-08-24

申请号：US18170552

申请日：2023-02-17

Applicant: LAPIS Technology Co., Ltd.

Inventor： Masayuki Otsuka ,  Satoru KUROTSU

IPC: H02H9/04 ,  G01K7/34 ,  G01K1/08

CPC classification number: H02H9/04 ,  G01K1/08 ,  G01K7/343

Abstract: An electrostatic breakdown protection circuit and a capacitance sensor device are provided. An electrostatic breakdown protection circuit included in an electronic device including an external terminal and an internal circuit connected to the external terminal includes: a first series diode group in which n diodes including a first diode having an anode connected to the external terminal and a second diode having a cathode applied with a power supply voltage are connected in series; and a second series diode group in which n diodes including a third diode having a cathode connected to the external terminal and a fourth diode having an anode applied with a ground voltage are connected in series.

公开(公告)号：US20250070550A1

公开(公告)日：2025-02-27

申请号：US18803607

申请日：2024-08-13

Applicant: LAPIS Technology Co., Ltd.

Inventor： Satoru KUROTSU

IPC: H02H9/02 ,  H02H9/00

Abstract: An RC circuit 110 is connected in series between VDD and GND. A RC circuit 120 is set with a time constant different from that of the RC circuit 110 connected in series between VDD and GND. In the inverter circuit 210, a potential is input between a resistance element 111 and a capacitance element 112. In the inverter circuit 220, a potential is input between a resistance element 121 and a capacitance element 122. In an NMOS transistor 310, an output of the inverter circuit 210 is input to a gate terminal, and a drain terminal is connected to VDD. In an NMOS transistor 320, an output of the inverter circuit 220 is input to a gate terminal, a drain terminal is connected with a source terminal of the NMOS transistor 310, and a source terminal is connected with GND.