公开(公告)号：US20130126876A1

公开(公告)日：2013-05-23

申请号：US13679643

申请日：2012-11-16

Applicant: LG DISPLAY CO., LTD.

Inventor： DongSu SHIN ,  SeungKyu CHOI ,  CheolHwan LEE

IPC: H01L29/786 ,  H01L29/66

CPC classification number: H01L27/124 ,  G02F1/134363 ,  G02F1/1368 ,  G02F2001/134372 ,  H01L27/1248 ,  H01L29/6675 ,  H01L29/786

Abstract: The present invention relates to an array substrate for a fringe field switching (FFS) mode liquid crystal display device and a method for fabricating the same. The liquid crystal display device may include a gate line formed on the substrate; a data line crossed with the gate line to define a pixel region; a thin-film transistor (TFT) formed at an intersection of the gate and data line; an organic insulating layer formed to have an opening portion for exposing the TFT; a common electrode having an area formed at an upper portion of the organic insulating layer, and an auxiliary electrode pattern connected to the TFT through the opening portion; a passivation layer formed to expose the auxiliary electrode pattern connected to the TFT; and pixel electrodes electrically connected to the TFT through the exposed auxiliary electrode pattern.

公开(公告)号：US20150001541A1

公开(公告)日：2015-01-01

申请号：US14479151

申请日：2014-09-05

Applicant: LG Display Co., Ltd.

Inventor： DongSu SHIN ,  SeungKyu CHOI ,  CheolHwan LEE

IPC: H01L27/12 ,  G02F1/1368 ,  G02F1/1343

CPC classification number: H01L27/124 ,  G02F1/134363 ,  G02F1/1368 ,  G02F2001/134372 ,  H01L27/1248 ,  H01L29/6675 ,  H01L29/786

Abstract: The present invention relates to an array substrate for a fringe field switching (FFS) mode liquid crystal display device and a method for fabricating the same. The liquid crystal display device may include a gate line formed on the substrate; a data line crossed with the gate line to define a pixel region; a thin-film transistor (TFT) formed at an intersection of the gate and data line; an organic insulating layer formed to have an opening portion for exposing the TFT; a common electrode having an area formed at an upper portion of the organic insulating layer, and an auxiliary electrode pattern connected to the TFT through the opening portion; a passivation layer formed to expose the auxiliary electrode pattern connected to the TFT; and pixel electrodes electrically connected to the TFT through the exposed auxiliary electrode pattern.

Abstract translation: 本发明涉及一种用于边缘场切换（FFS）模式液晶显示装置的阵列基板及其制造方法。 液晶显示装置可以包括形成在基板上的栅极线; 数据线与栅极线交叉以限定像素区域; 形成在栅极和数据线的交点处的薄膜晶体管（TFT）; 形成为具有用于使所述TFT露出的开口部的有机绝缘层; 具有形成在所述有机绝缘层的上部的区域的公共电极和通过所述开口部连接到所述TFT的辅助电极图案; 形成为暴露与TFT连接的辅助电极图案的钝化层; 以及通过暴露的辅助电极图案与TFT电连接的像素电极。