公开(公告)号：US20160372497A1

公开(公告)日：2016-12-22

申请号：US15182265

申请日：2016-06-14

Applicant: LG DISPLAY CO., LTD.

Inventor： Sohyung LEE ,  Youngyoung CHANG ,  Kwonshik PARK ,  Mincheol KIM ,  Jeongsuk YANG

IPC: H01L27/12 ,  G02F1/1343 ,  G02F1/1362 ,  G02F1/1333 ,  H01L27/32 ,  G02F1/1368

CPC classification number: H01L27/1255 ,  G02F1/136213 ,  G02F1/1368 ,  G02F2001/134372 ,  H01L27/1222 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1251 ,  H01L27/3265

Abstract: A thin film transistor (TFT) substrate and a display device using the same are disclosed. The TFT substrate includes a first TFT including a polycrystalline semiconductor layer, a first gate electrode, a first source electrode, and a first drain electrode deposited on a substrate, a second TFT separated from the first TFT, the second TFT including a second gate electrode, an oxide semiconductor layer, a second source electrode, and a second drain electrode deposited on the first gate electrode, and a plurality of storage capacitors separated from the first and second TFTs, each storage capacitor including a first dummy semiconductor layer, a first gate insulating layer on the first dummy semiconductor layer, a first dummy gate electrode on the first gate insulating layer, and an intermediate insulating layer on the first dummy gate electrode.

Abstract translation: 公开了一种薄膜晶体管（TFT）基板和使用其的显示装置。 TFT基板包括：第一TFT，包括多晶半导体层，第一栅极电极，第一源电极和沉积在基板上的第一漏极电极，与第一TFT分离的第二TFT，第二TFT包括第二栅电极 ，沉积在第一栅电极上的氧化物半导体层，第二源极和第二漏电极以及与第一和第二TFT分离的多个存储电容器，每个存储电容器包括第一虚拟半导体层，第一栅极 第一虚设半导体层上的绝缘层，第一栅极绝缘层上的第一伪栅电极和第一伪栅电极上的中间绝缘层。