公开(公告)号：US20180190931A1

公开(公告)日：2018-07-05

申请号：US15859017

申请日：2017-12-29

Applicant: LG DISPLAY CO., LTD.

Inventor： In-Sang JUNG ,  Kum-Mi OH ,  Won-Sang RYU ,  Sun-Wook KO

IPC: H01L51/52 ,  H01L27/32 ,  G09G3/3225

CPC classification number: H01L51/5203 ,  G09G3/3225 ,  G09G2300/0426 ,  G09G2300/0465 ,  G09G2310/0264 ,  H01L27/3209 ,  H01L27/3248 ,  H01L27/3262 ,  H01L27/3276 ,  H01L29/786

Abstract: A driving thin-film transistor can include a substrate; a first active layer disposed on the substrate and including a first protruding portion; a second active layer overlapping with the first active layer and including a second protruding portion; a gate electrode disposed between the first active layer and the second active layer; a source electrode connected to the first protruding portion of the first active layer; and a drain electrode connected to the second protruding portion of the second active layer, in which the first protruding portion of the first active layer and the second protruding portion of the second active layer are located at different positions.

公开(公告)号：US20230215956A1

公开(公告)日：2023-07-06

申请号：US18055337

申请日：2022-11-14

Applicant: LG Display Co., Ltd.

Inventor： Kum-Mi OH ,  Deuk-Ho YEON ,  Sun-Wook KO

IPC: H01L29/786 ,  H01L29/417 ,  H01L27/12

CPC classification number: H01L29/78696 ,  H01L29/41733 ,  H01L27/3262 ,  H01L27/1214

Abstract: A thin film transistor and a display panel having the same are provided. A display panel includes a substrate, an active layer disposed over the substrate and including a source region, a drain region, and a middle region between the source region and the drain region, and a gate electrode over the active layer and disposed overlapping with the middle region, and the active layer includes a plurality of holes disposed symmetrically with respect to the middle region. The display panel can improve its reliability owing to heat dissipation paths through the plurality of holes.

公开(公告)号：US20230163137A1

公开(公告)日：2023-05-25

申请号：US17977368

申请日：2022-10-31

Applicant: LG DISPLAY CO., LTD.

Inventor： Kum-Mi OH ,  Deuk-Ho YEON ,  Sun-Wook KO

IPC: H01L27/12 ,  H01L25/16

CPC classification number: H01L27/1237 ,  H01L25/167

Abstract: A driving thin film transistor includes an insulation layer disposed on a substrate and including a first groove; a first active layer corresponding to the first groove and including a channel region and source and drain regions at both sides of the channel region; first source and first drain electrodes spaced apart from each other and being in contact with the source and drain regions, respectively; and a gate electrode overlapping the channel region, wherein the channel region is disposed on a bottom surface and inner side surfaces of the first groove, and the source and drain regions are disposed on a top surface of the insulation layer.