公开(公告)号：US20230389358A1

公开(公告)日：2023-11-30

申请号：US18231546

申请日：2023-08-08

Applicant: LG Display Co., Ltd.

Inventor： Seong-Pil CHO ,  Dong-Yup KIM ,  Kyung-Mo SON ,  Sang-Soon NOH ,  Jun-Seuk LEE ,  Yong-Bin KANG ,  Kye-Chul CHOI ,  Sung-Ho MOON ,  Sang-Gul LEE ,  Byeong-Keun KIM ,  Kyoung-Soo LEE ,  Hyun-Gyo JEONG ,  Jin-Kyu ROH ,  Jung-Doo JIN ,  Ki-Hyun KWON ,  Hee-Jin JUNG ,  Jang-Dae KIM ,  Won-Ho SON ,  Chan-Ho KIM

IPC: H10K59/121 ,  H01L29/786 ,  H01L29/49 ,  H01L27/12

CPC classification number: H10K59/1213 ,  H10K59/1216 ,  H01L29/78675 ,  H01L29/4908 ,  H01L27/1255 ,  H01L27/1225 ,  H01L29/7869

Abstract: A display apparatus can include a first thin-film transistor including a first active layer having a first polysilicon material, a first gate electrode overlapping the first active layer, a first electrode and a second electrode; a second thin-film transistor including a second active layer having an oxide semiconductor, a second gate electrode overlapping the second active layer, a third electrode and a fourth electrode; and a first emitting electrode of a light emitting element electrically connected to the second electrode of the first thin-film transistor. Also, one end of the first active layer having the first polysilicon material is electrically connected to one or the other end of the second active layer having the oxide semiconductor.

公开(公告)号：US20210005693A1

公开(公告)日：2021-01-07

申请号：US16921432

申请日：2020-07-06

Applicant: LG Display Co., Ltd.

Inventor： Seong-Pil CHO ,  Dong-Yup KIM ,  Kyung-Mo SON ,  Sang-Soon NOH ,  Jun-Seuk LEE ,  Yong-Bin KANG ,  Kye-Chul CHOI ,  Sung-Ho MOON ,  Sang-Gul LEE ,  Byeong-Keun KIM ,  Kyoung-Soo LEE ,  Hyun-Gyo JEONG ,  Jin-Kyu ROH ,  Jung-Doo JIN ,  Ki-Hyun KWON ,  Hee-Jin JUNG ,  Jang-Dae KIM ,  Won-Ho SON ,  Chan-Ho KIM

IPC: H01L27/32

Abstract: A display apparatus including a first thin-film transistor, a second thin-film transistor and a third thin-film transistor is provided. The first thin-film transistor includes a first active layer composed of a polysilicon material, a first gate electrode overlapping the first active layer such that a first gate insulating layer is interposed therebetween, a first source electrode and a first drain electrode. The first gate electrode includes n layers. The first source electrode and the first drain electrode are connected to the first active layer. The second thin-film transistor includes a second active layer composed of a polysilicon material, a second gate electrode overlapping the second active layer such that a first gate insulating layer is interposed therebetween, a second source electrode and a second drain electrode. The second gate electrode includes n+1 layers. The second source electrode and the second drain electrode are connected to the second active layer.

公开(公告)号：US20210005638A1

公开(公告)日：2021-01-07

申请号：US16920467

申请日：2020-07-03

Applicant: LG Display Co., Ltd.

Inventor： So-Young NOH ,  Ki-Tae KIM ,  Kyeong-Ju MOON ,  Hyuk JI ,  Jin-Kyu ROH ,  Jung-Doo JIN ,  Kye-Chul CHOI ,  Dong-Yup KIM ,  Chan-Ho KIM

IPC: H01L27/12 ,  H01L27/32

Abstract: A display apparatus includes an oxide semiconductor pattern disposed on a device substrate and including a channel region disposed between a source region and a drain region, a gate electrode overlapping the channel region of the oxide semiconductor pattern and having a structure in which a first hydrogen barrier layer and a gate conductive layer are stacked, and a gate insulating film disposed between the oxide semiconductor pattern and the gate electrode to expose the source region and the drain region of the oxide semiconductor pattern. The gate electrode exposes a portion of the gate insulating film that is adjacent to the source region and a portion of the gate insulating film that is adjacent to the drain region.