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公开(公告)号:US20210005693A1
公开(公告)日:2021-01-07
申请号:US16921432
申请日:2020-07-06
Applicant: LG Display Co., Ltd.
Inventor: Seong-Pil CHO , Dong-Yup KIM , Kyung-Mo SON , Sang-Soon NOH , Jun-Seuk LEE , Yong-Bin KANG , Kye-Chul CHOI , Sung-Ho MOON , Sang-Gul LEE , Byeong-Keun KIM , Kyoung-Soo LEE , Hyun-Gyo JEONG , Jin-Kyu ROH , Jung-Doo JIN , Ki-Hyun KWON , Hee-Jin JUNG , Jang-Dae KIM , Won-Ho SON , Chan-Ho KIM
IPC: H01L27/32
Abstract: A display apparatus including a first thin-film transistor, a second thin-film transistor and a third thin-film transistor is provided. The first thin-film transistor includes a first active layer composed of a polysilicon material, a first gate electrode overlapping the first active layer such that a first gate insulating layer is interposed therebetween, a first source electrode and a first drain electrode. The first gate electrode includes n layers. The first source electrode and the first drain electrode are connected to the first active layer. The second thin-film transistor includes a second active layer composed of a polysilicon material, a second gate electrode overlapping the second active layer such that a first gate insulating layer is interposed therebetween, a second source electrode and a second drain electrode. The second gate electrode includes n+1 layers. The second source electrode and the second drain electrode are connected to the second active layer.
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公开(公告)号:US20230389358A1
公开(公告)日:2023-11-30
申请号:US18231546
申请日:2023-08-08
Applicant: LG Display Co., Ltd.
Inventor: Seong-Pil CHO , Dong-Yup KIM , Kyung-Mo SON , Sang-Soon NOH , Jun-Seuk LEE , Yong-Bin KANG , Kye-Chul CHOI , Sung-Ho MOON , Sang-Gul LEE , Byeong-Keun KIM , Kyoung-Soo LEE , Hyun-Gyo JEONG , Jin-Kyu ROH , Jung-Doo JIN , Ki-Hyun KWON , Hee-Jin JUNG , Jang-Dae KIM , Won-Ho SON , Chan-Ho KIM
IPC: H10K59/121 , H01L29/786 , H01L29/49 , H01L27/12
CPC classification number: H10K59/1213 , H10K59/1216 , H01L29/78675 , H01L29/4908 , H01L27/1255 , H01L27/1225 , H01L29/7869
Abstract: A display apparatus can include a first thin-film transistor including a first active layer having a first polysilicon material, a first gate electrode overlapping the first active layer, a first electrode and a second electrode; a second thin-film transistor including a second active layer having an oxide semiconductor, a second gate electrode overlapping the second active layer, a third electrode and a fourth electrode; and a first emitting electrode of a light emitting element electrically connected to the second electrode of the first thin-film transistor. Also, one end of the first active layer having the first polysilicon material is electrically connected to one or the other end of the second active layer having the oxide semiconductor.
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公开(公告)号:US20160005803A1
公开(公告)日:2016-01-07
申请号:US14745684
申请日:2015-06-22
Applicant: LG Display Co., Ltd.
Inventor: Won-Sang RYU , Sang-Soon NOH , Dong-Chae SHIN , Sun-Young CHOI
CPC classification number: H01L27/3265 , H01L27/3248 , H01L27/3258 , H01L27/3272 , H01L51/5253 , H01L2251/5338
Abstract: Disclosed is an organic electroluminescent device (OELD) includes a first substrate including a pixel region that includes an element region and a light emission region; a storage capacitor disposed at the element region, and including a first storage electrode, a first buffer layer on the first storage electrode, and a second storage electrode on the first buffer layer; a second buffer layer on the storage capacitor; a plurality of TFTs on the second buffer layer at the element region; and a passivation layer on the plurality of TFTs, wherein the storage capacitor overlaps at least one of the plurality of TFTs.
Abstract translation: 公开了一种有机电致发光器件(OELD),包括:包括元件区域和发光区域的像素区域的第一衬底; 设置在元件区域的存储电容器,包括第一存储电极,第一存储电极上的第一缓冲层和第一缓冲层上的第二存储电极; 存储电容器上的第二缓冲层; 元件区域上的第二缓冲层上的多个TFT; 以及多个TFT上的钝化层,其中所述存储电容器与所述多个TFT中的至少一个重叠。
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