公开(公告)号：US20250048738A1

公开(公告)日：2025-02-06

申请号：US18783354

申请日：2024-07-24

Applicant: LG Display Co., Ltd.

Inventor： Dohyun KWAK ,  Dohyung LEE ,  HongRak CHOI ,  GaWon YANG

IPC: H01L27/12

Abstract: A thin film transistor and a display apparatus including the same are provided. The thin film transistor includes an active layer, a sub-conductive material layer on the active layer, a gate electrode spaced apart from the active layer and at least partially overlapping the active layer, and a conductive material layer on the active layer. The active layer includes a channel portion partially overlapping the gate electrode, a first connection portion connected to one side of the channel portion, and a second connection portion connected to the other side of the channel portion. The sub-conductive material layer includes a source conductive material layer on the first connection portion, and a drain conductive material layer on the second connection portion. The conductive material layer is disposed on the channel portion and is disposed on the same layer as the sub-conductive material layer.

公开(公告)号：US20250048739A1

公开(公告)日：2025-02-06

申请号：US18783662

申请日：2024-07-25

Applicant: LG DISPLAY CO., LTD.

Inventor： ChanYong JEONG ,  JuHeyuck BAECK ,  Dohyung LEE ,  Younghyun KO ,  HongRak CHOI ,  Dohyun KWAK

IPC: H01L27/12 ,  H01L25/16

Abstract: A thin film transistor substrate includes a thin film transistor, on a substrate, including an active layer; a conductive material layer; and a gate electrode spaced apart and partially overlapping the active layer. The active layer includes a channel area partially overlapping the gate electrode, and a source area and a drain area connected to respective sides of the channel area. The conductive material layer includes a first and second conductive material layer respectively on the source drain areas. The first conductive material layer overlaps at least a portion of the channel area. The active layer includes an active hole in which the active layer is absent within an area defined by the active layer, and, in a plan view, the active hole extends from the channel area to the drain area.

公开(公告)号：US20250031410A1

公开(公告)日：2025-01-23

申请号：US18763082

申请日：2024-07-03

Applicant: LG Display Co., Ltd.

Inventor： Dohyung LEE ,  HongRak CHOI ,  Dohyun KWAK ,  JuHeyuck BAECK

IPC: H01L29/786 ,  H01L29/66 ,  H10K59/121 ,  H10K59/126

Abstract: A thin film transistor, and a method for manufacturing the same and a display apparatus comprising the same are provided. The thin film transistor includes a light shielding layer, an active layer on the light shielding layer, a gate electrode spaced apart from the active layer and overlapping at least a portion of the active layer, and an internal bridge electrically connecting the light shielding layer and the gate electrode being insulated from the active layer. The internal bridge overlaps the gate electrode and penetrates the active layer along a direction from the gate electrode to the light shielding layer. In addition, one embodiment of the present disclosure provides a display apparatus including the thin film transistor.