公开(公告)号：US11228013B2

公开(公告)日：2022-01-18

申请号：US16165691

申请日：2018-10-19

Applicant: LG Display Co., Ltd.

Inventor： Sung-Il Woo ,  Dong-Young Kim ,  Hye-Ock Choi

IPC: H01L51/50 ,  H01L27/32 ,  H01L51/00 ,  H01L51/56

Abstract: The present disclosure relates to a light-emitting diode including a first electrode and a second electrode facing each other; an electron transfer layer between the first electrode and the second electrode; and a light emitting material between the first electrode and the second electrode, wherein the electron transfer layer consists of anisotropic nanorods, and the long axes of the anisotropic nanorods are arranged at an angle of about 20 degrees to about 90 degrees with respect to an interface with an adjacent layer into which electrons are injected.

公开(公告)号：US20190123292A1

公开(公告)日：2019-04-25

申请号：US16165691

申请日：2018-10-19

Applicant: LG Display Co., Ltd.

Inventor： Sung-ll Woo ,  Dong-Young Kim ,  Hye-Ock Choi

IPC: H01L51/50 ,  H01L51/00 ,  H01L51/56

Abstract: The present disclosure relates to a light-emitting diode including a first electrode and a second electrode facing each other; an electron transfer layer between the first electrode and the second electrode; and a light emitting material between the first electrode and the second electrode, wherein the electron transfer layer consists of anisotropic nanorods, and the long axes of the anisotropic nanorods are arranged at an angle of about 20 degrees to about 90 degrees with respect to an interface with an adjacent layer into which electrons are injected.

公开(公告)号：US11849594B2

公开(公告)日：2023-12-19

申请号：US16129114

申请日：2018-09-12

Applicant: LG Display Co., Ltd.

Inventor： Min-Jee Kim ,  Sung-Il Woo ,  Hye-Ock Choi ,  Ji-Yeon Kang

IPC: H10K50/115 ,  C08L29/04 ,  C08K3/22 ,  C08K3/36 ,  C09D129/04 ,  H10K50/16 ,  H10K50/81 ,  H10K50/82 ,  H10K50/17 ,  H10K59/121 ,  H10K50/15 ,  H10K50/165 ,  H10K102/00

CPC classification number: H10K50/115 ,  C08K3/22 ,  C08K3/36 ,  C08L29/04 ,  C09D129/04 ,  H10K50/16 ,  H10K50/171 ,  H10K50/81 ,  H10K50/82 ,  H10K59/1213 ,  C08K2003/2217 ,  C08K2003/2231 ,  C08K2003/2296 ,  C08L2207/53 ,  H10K50/15 ,  H10K50/165 ,  H10K2102/331 ,  H10K2102/351

Abstract: A quantum dot emitting diode includes first and second electrodes facing each other; a quantum dot emitting material layer between the first and second electrodes; and an electron transporting layer including an electron transporting material and disposed between the quantum dot emitting material layer and the second electrode, wherein the electron transporting material includes a core of metal oxide and a shell of silica.