公开(公告)号：US10944067B2

公开(公告)日：2021-03-09

申请号：US16689919

申请日：2019-11-20

Applicant: LG Display Co., Ltd.

Inventor： Ji-Yeon Kang ,  Min-Jee Kim ,  Jae-Hyun Park

IPC: H01L51/50

Abstract: A quantum dot light emitting diode comprises first and second electrodes facing each other; a hole injection layer disposed between the first electrode and the second electrode and having a first HOMO level; a first hole transporting layer disposed between the hole injection layer and the second electrode and having a second HOMO level that is lower than the first HOMO level; a second hole transporting layer disposed between the first hole transporting layer and the second electrode and having a third HOMO level that is lower than the second HOMO level; and a quantum dot light emitting layer disposed between the second hole transporting layer and the second electrode and having a fourth HOMO level that is lower than the third HOMO level, wherein a difference between the first HOMO level and the second HOMO level is greater than a difference between the second HOMO level and the third HOMO level and less than a difference between the third HOMO level and the fourth HOMO level.

公开(公告)号：US11849594B2

公开(公告)日：2023-12-19

申请号：US16129114

申请日：2018-09-12

Applicant: LG Display Co., Ltd.

Inventor： Min-Jee Kim ,  Sung-Il Woo ,  Hye-Ock Choi ,  Ji-Yeon Kang

IPC: H10K50/115 ,  C08L29/04 ,  C08K3/22 ,  C08K3/36 ,  C09D129/04 ,  H10K50/16 ,  H10K50/81 ,  H10K50/82 ,  H10K50/17 ,  H10K59/121 ,  H10K50/15 ,  H10K50/165 ,  H10K102/00

CPC classification number: H10K50/115 ,  C08K3/22 ,  C08K3/36 ,  C08L29/04 ,  C09D129/04 ,  H10K50/16 ,  H10K50/171 ,  H10K50/81 ,  H10K50/82 ,  H10K59/1213 ,  C08K2003/2217 ,  C08K2003/2231 ,  C08K2003/2296 ,  C08L2207/53 ,  H10K50/15 ,  H10K50/165 ,  H10K2102/331 ,  H10K2102/351

Abstract: A quantum dot emitting diode includes first and second electrodes facing each other; a quantum dot emitting material layer between the first and second electrodes; and an electron transporting layer including an electron transporting material and disposed between the quantum dot emitting material layer and the second electrode, wherein the electron transporting material includes a core of metal oxide and a shell of silica.