公开(公告)号：US20240194791A1

公开(公告)日：2024-06-13

申请号：US18380359

申请日：2023-10-16

Applicant: LG Display Co., Ltd.

Inventor： Jaeyoon PARK ,  Jinwon JUNG ,  Hyeonjoo SEUL ,  Sungju CHOI ,  Dongyeon KANG

IPC: H01L29/786 ,  G09G3/32 ,  H10K59/121

CPC classification number: H01L29/7869 ,  G09G3/32 ,  H01L29/78618 ,  H01L29/78696 ,  H10K59/1213 ,  G09G2300/0842 ,  G09G2300/0861

Abstract: A thin film transistor comprises an active layer; and a gate electrode spaced apart from the active layer to at least partially overlap the active layer in a plan view. The active layer includes a channel area that is overlapped by the gate electrode in the plan view; a source area connected to one side of the channel area without being overlapped by the gate electrode in the plan view; and a drain area connected to the other side of the channel area without being overlapped by the gate electrode in the plan view. The source area and the drain area are spaced apart from each other with the channel area interposed therebetween. The active layer includes a first source conductorization control area and a first drain conductorization control area, which are spaced apart from each other. The first source conductorization control area corresponds to at least a portion of the channel area in the plan view, and the first drain conductorization control area corresponds to at least a portion of the channel area in the plan view.

公开(公告)号：US20240222452A1

公开(公告)日：2024-07-04

申请号：US18380497

申请日：2023-10-16

Applicant: LG Display Co., Ltd.

Inventor： Jaeyoon PARK ,  Jinwon JUNG ,  Hyeonjoo SEUL ,  Sungju CHOI ,  Dongyeon KANG

IPC: H01L29/417 ,  G09G3/3266 ,  G09G3/3275 ,  H01L29/423 ,  H01L29/786

CPC classification number: H01L29/41733 ,  G09G3/3266 ,  G09G3/3275 ,  H01L29/42384 ,  H01L29/78696 ,  G09G2310/0286

Abstract: A thin film transistor substrate includes a substrate; an active layer on the substrate; a gate electrode on the active layer; a source electrode connected to a first side of the active layer, and a drain electrode connected to a second side of the active layer. The gate electrode includes a body portion and at least one first protrusion on a first side of the body part with the at least one first protrusion overlapping the active layer in a plan view.

公开(公告)号：US20240429242A1

公开(公告)日：2024-12-26

申请号：US18749931

申请日：2024-06-21

Applicant: LG Display Co., Ltd.

Inventor： Hyeonjoo SEUL ,  Jaeyoon PARK ,  Jinwon JUNG ,  Dongyeon KANG

IPC: H01L27/12 ,  H01L29/417

Abstract: A thin film transistor substrate for a display device can include a light blocking layer disposed on a substrate, an active layer overlapping with the light blocking layer, a first lower hole penetrating through the active layer, a gate electrode overlapping with the active layer, a source electrode penetrating through the active layer and contacting with the light blocking layer, an insulating layer disposed on the active layer, and a first upper hole penetrating through the insulating layer. Also, the source electrode includes a first lower electrode disposed in the first lower hole and a first upper electrode disposed in the first upper hole, in which a width of the first upper electrode is greater than a width of the first lower electrode.