公开(公告)号：US20240047582A1

公开(公告)日：2024-02-08

申请号：US18226067

申请日：2023-07-25

Applicant: LG Display Co., Ltd.

Inventor： Sungju CHOI ,  Jaeyoon PARK ,  JungSeok SEO ,  Seoyeon IM ,  Jinwon JUNG

IPC: H01L29/786 ,  H01L29/417 ,  H10K59/121 ,  H10K59/126

CPC classification number: H01L29/78633 ,  H01L29/41733 ,  H01L29/78696 ,  H10K59/1213 ,  H10K59/126

Abstract: Discussed is a thin film transistor and a display apparatus. The thin film transistor can include a light shielding layer disposed on the substrate and formed of, or include conductive materials, an active layer disposed on the light shielding layer and overlapping the light shielding layer, a source electrode connected to a first side of the active layer and the light shielding layer, a drain electrode connected to a second side of the active layer, a gate electrode overlapping the active layer, and a connection layer disposed between the light shielding layer and the active layer, and electrically connecting the light shielding layer with the active layer.

公开(公告)号：US20230207702A1

公开(公告)日：2023-06-29

申请号：US18117416

申请日：2023-03-04

Applicant: LG Display Co., Ltd.

Inventor： SeHee PARK ,  JungSeok SEO ,  PilSang YUN ,  Jeyong JEON ,  Jaeyoon PARK ,  ChanYong JEONG

IPC: H01L29/786 ,  H01L29/66 ,  H01L29/49 ,  H01L29/24

CPC classification number: H01L29/7869 ,  H01L29/66742 ,  H01L29/4908 ,  H01L29/24

Abstract: A thin-film transistor, a display device including a thin-film transistor, and a method of manufacturing a thin-film transistor are provided. A thin-film transistor includes: a base substrate, a semiconductor layer on the base substrate, the semiconductor layer including: a first oxide semiconductor layer, and a second oxide semiconductor layer on the first oxide semiconductor layer, the second oxide semiconductor layer having a Hall mobility smaller than a Hall mobility of the first oxide semiconductor layer, and a gate electrode spaced apart from the semiconductor layer and partially overlapping the semiconductor layer, wherein a concentration of gallium (Ga) in the second oxide semiconductor layer is higher than a concentration of gallium (Ga) in the first oxide semiconductor layer.

公开(公告)号：US20190206972A1

公开(公告)日：2019-07-04

申请号：US16219440

申请日：2018-12-13

Applicant: LG Display Co., Ltd.

Inventor： SeHee PARK ,  PilSang YUN ,  Jaeyoon PARK

IPC: H01L27/32 ,  H01L27/12 ,  H01L51/52 ,  G09G3/3291

Abstract: An organic light emitting display panel can include a substrate; pixels disposed on the substrate; a driving transistor including: a driving active layer, a driving gate electrode overlapping with the driving active layer, a driving first conductor extended from one end of the driving active layer, a driving second conductor extended from the other end of the driving active layer, and a driving first gate insulating film overlapping with the driving active layer; a switching transistor including: a switching active layer, a switching gate electrode overlapping with the switching active layer, a switching first conductor extended from one end of the switching active layer, a switching second conductor extended from the other end of the switching active layer, and a switching first gate insulating film overlapping with the switching active layer; an organic light emitting diode; and a second gate insulating film disposed between the driving and switching gate electrodes of the driving and switching transistors, and the driving first conductor, the driving second conductor, the driving first gate insulating film, the switching first conductor, the switching second conductor and the switching first gate insulating film.

公开(公告)号：US20240282863A1

公开(公告)日：2024-08-22

申请号：US18634854

申请日：2024-04-12

Applicant: LG Display Co., Ltd.

Inventor： SeHee PARK ,  JungSeok SEO ,  PilSang YUN ,  Jeyong JEON ,  Jaeyoon PARK ,  ChanYong JEONG

IPC: H01L29/786 ,  H01L29/24 ,  H01L29/49 ,  H01L29/66

CPC classification number: H01L29/7869 ,  H01L29/24 ,  H01L29/4908 ,  H01L29/66742

Abstract: A thin-film transistor includes: a base substrate; a semiconductor layer on the base substrate, the semiconductor layer including a first oxide semiconductor layer and a second oxide semiconductor layer on the first oxide semiconductor layer, the second oxide semiconductor layer having a Hall mobility smaller than a Hall mobility of the first oxide semiconductor layer; a gate electrode spaced apart from the semiconductor layer and partially overlapping the semiconductor layer; a gate insulating layer between the semiconductor layer and the gate electrode; and a first mixture area between the first oxide semiconductor layer and the second oxide semiconductor layer. The second oxide semiconductor layer includes gallium (Ga) of 40 atom % or more in comparison with a total metallic element with respect to a number of atoms. The first mixture area, the first oxide semiconductor layer, and the second oxide semiconductor layer are formed by metal-organic chemical vapor deposition (MOCVD).

公开(公告)号：US20240194791A1

公开(公告)日：2024-06-13

申请号：US18380359

申请日：2023-10-16

Applicant: LG Display Co., Ltd.

Inventor： Jaeyoon PARK ,  Jinwon JUNG ,  Hyeonjoo SEUL ,  Sungju CHOI ,  Dongyeon KANG

IPC: H01L29/786 ,  G09G3/32 ,  H10K59/121

CPC classification number: H01L29/7869 ,  G09G3/32 ,  H01L29/78618 ,  H01L29/78696 ,  H10K59/1213 ,  G09G2300/0842 ,  G09G2300/0861

Abstract: A thin film transistor comprises an active layer; and a gate electrode spaced apart from the active layer to at least partially overlap the active layer in a plan view. The active layer includes a channel area that is overlapped by the gate electrode in the plan view; a source area connected to one side of the channel area without being overlapped by the gate electrode in the plan view; and a drain area connected to the other side of the channel area without being overlapped by the gate electrode in the plan view. The source area and the drain area are spaced apart from each other with the channel area interposed therebetween. The active layer includes a first source conductorization control area and a first drain conductorization control area, which are spaced apart from each other. The first source conductorization control area corresponds to at least a portion of the channel area in the plan view, and the first drain conductorization control area corresponds to at least a portion of the channel area in the plan view.

公开(公告)号：US20180151606A1

公开(公告)日：2018-05-31

申请号：US15824974

申请日：2017-11-28

Applicant: LG Display Co., Ltd.

Inventor： SeHee PARK ,  HongRak CHOI ,  PilSang YUN ,  HyungJoon KOO ,  Kwanghwan JI ,  Jaeyoon PARK

IPC: H01L27/12 ,  H01L51/56 ,  H01L27/32 ,  H01L29/49

CPC classification number: H01L27/1288 ,  H01L27/0733 ,  H01L27/1214 ,  H01L27/1225 ,  H01L27/1237 ,  H01L27/1248 ,  H01L27/1255 ,  H01L27/3246 ,  H01L27/3248 ,  H01L27/3258 ,  H01L27/3262 ,  H01L29/41733 ,  H01L29/4908 ,  H01L29/78645 ,  H01L29/78696 ,  H01L51/56 ,  H01L2924/1426

Abstract: Disclosed are a transistor substrate, an organic light emitting display panel including the same, a method of manufacturing the transistor substrate, and an organic light emitting display device including the organic light emitting display panel, in which a driving transistor and a switching transistor are provided and each include an oxide semiconductor of which both ends are covered by an insulation layer, and a gate of the driving transistor and a gate of the switching transistor are provided on different layers.

公开(公告)号：US20240222452A1

公开(公告)日：2024-07-04

申请号：US18380497

申请日：2023-10-16

Applicant: LG Display Co., Ltd.

Inventor： Jaeyoon PARK ,  Jinwon JUNG ,  Hyeonjoo SEUL ,  Sungju CHOI ,  Dongyeon KANG

IPC: H01L29/417 ,  G09G3/3266 ,  G09G3/3275 ,  H01L29/423 ,  H01L29/786

CPC classification number: H01L29/41733 ,  G09G3/3266 ,  G09G3/3275 ,  H01L29/42384 ,  H01L29/78696 ,  G09G2310/0286

Abstract: A thin film transistor substrate includes a substrate; an active layer on the substrate; a gate electrode on the active layer; a source electrode connected to a first side of the active layer, and a drain electrode connected to a second side of the active layer. The gate electrode includes a body portion and at least one first protrusion on a first side of the body part with the at least one first protrusion overlapping the active layer in a plan view.

公开(公告)号：US20230317855A1

公开(公告)日：2023-10-05

申请号：US18127408

申请日：2023-03-28

Applicant: LG Display Co., Ltd. ,  Hanyang University Industry-University Cooperation Foundation

Inventor： JungSeok SEO ,  Jin Seong PARK ,  Jaeyoon PARK ,  Ki Lim HAN ,  Taewon HWANG ,  Won-Bum LEE

IPC: H01L29/786 ,  H01L29/417

CPC classification number: H01L29/7869 ,  H01L29/41733 ,  H10K59/1213

Abstract: A thin film transistor substrate and a display apparatus including the same includes a substrate; an active layer and a gate electrode on the substrate, the active layer and gate electrode being spaced apart from each other vertically; a gate insulating film including a first gate insulating film and a second gate insulating film provided between the active layer and the gate electrode; and a source electrode and a drain electrode, each of the source electrode and the drain electrode connected to the active layer. The first gate insulating film is provided closer to the gate electrode than the second gate insulating film, a dielectric constant of the first gate insulating film is higher than a dielectric constant of the second gate insulating film, and a hydrogen content of the first gate insulating film is lower than a hydrogen content of the second gate insulating film.

公开(公告)号：US20210384357A1

公开(公告)日：2021-12-09

申请号：US17406994

申请日：2021-08-19

Applicant: LG Display Co., Ltd.

Inventor： SeHee PARK ,  JungSeok SEO ,  PilSang YUN ,  Jeyong JEON ,  Jaeyoon PARK ,  ChanYong JEONG

IPC: H01L29/786 ,  H01L29/66 ,  H01L29/49 ,  H01L29/24

Abstract: A thin-film transistor, a display device including a thin-film transistor, and a method of manufacturing a thin-film transistor are provided. A thin-film transistor includes: a base substrate, a semiconductor layer on the base substrate, the semiconductor layer including: a first oxide semiconductor layer, and a second oxide semiconductor layer on the first oxide semiconductor layer, the second oxide semiconductor layer having a Hall mobility smaller than a Hall mobility of the first oxide semiconductor layer, and a gate electrode spaced apart from the semiconductor layer and partially overlapping the semiconductor layer, wherein a concentration of gallium (Ga) in the second oxide semiconductor layer is higher than a concentration of gallium (Ga) in the first oxide semiconductor layer.

公开(公告)号：US20240429242A1

公开(公告)日：2024-12-26

申请号：US18749931

申请日：2024-06-21

Applicant: LG Display Co., Ltd.

Inventor： Hyeonjoo SEUL ,  Jaeyoon PARK ,  Jinwon JUNG ,  Dongyeon KANG

IPC: H01L27/12 ,  H01L29/417

Abstract: A thin film transistor substrate for a display device can include a light blocking layer disposed on a substrate, an active layer overlapping with the light blocking layer, a first lower hole penetrating through the active layer, a gate electrode overlapping with the active layer, a source electrode penetrating through the active layer and contacting with the light blocking layer, an insulating layer disposed on the active layer, and a first upper hole penetrating through the insulating layer. Also, the source electrode includes a first lower electrode disposed in the first lower hole and a first upper electrode disposed in the first upper hole, in which a width of the first upper electrode is greater than a width of the first lower electrode.