公开(公告)号：US09117846B2

公开(公告)日：2015-08-25

申请号：US14055553

申请日：2013-10-16

Applicant: LG Display Co., Ltd.

Inventor： Sang-Moo Park ,  Bong-Chul Kim ,  Chan-Ki Ha ,  Jin-Woo Kwon ,  Heung-Jo Lee

IPC: H01L29/66 ,  H01L29/786

CPC classification number: H01L29/66742 ,  H01L29/66969 ,  H01L29/7869

Abstract: A method of manufacturing an oxide thin film transistor includes forming a gate electrode on a substrate; forming a gate insulating film the gate electrode; forming an oxide semiconductor layer on the gate insulating film; sequentially forming a lower data metal layer and an upper data metal layer on including the oxide semiconductor layer; forming an upper source pattern and an upper drain pattern by patterning the upper data metal layer by a wet etching; forming a lower source pattern and a lower drain pattern by patterning the lower data metal layer by a dry etching using the upper source pattern and the upper drain pattern as a mask to form a source electrode and a drain electrode; forming a first passivation film on the source and drain electrodes; performing a heat treatment on the oxide semiconductor layer; and forming a second passivation film on the first passivation film.

Abstract translation: 一种氧化物薄膜晶体管的制造方法，包括：在基板上形成栅电极; 形成栅极绝缘膜; 在栅极绝缘膜上形成氧化物半导体层; 在包括所述氧化物半导体层上顺序地形成下数据金属层和上数据金属层; 通过湿蚀刻图案化上数据金属层，形成上源图案和上漏图案; 通过使用上部源图案和上部排列图案作为掩模的干蚀刻图案化下部数据金属层来形成较低的源图案和较低的漏极图案，以形成源极和漏极; 在源极和漏极上形成第一钝化膜; 对氧化物半导体层进行热处理; 以及在所述第一钝化膜上形成第二钝化膜。

公开(公告)号：US20140147967A1

公开(公告)日：2014-05-29

申请号：US14055553

申请日：2013-10-16

Applicant: LG DISPLAY CO., LTD.

Inventor： Sang-Moo Park ,  Bong-Chul Kim ,  Chan-Ki Ha ,  Jin-Woo Kwon ,  Heung-Jo Lee

IPC: H01L29/66

CPC classification number: H01L29/66742 ,  H01L29/66969 ,  H01L29/7869

Abstract: A method of manufacturing an oxide thin film transistor includes forming a gate electrode on a substrate; forming a gate insulating film the gate electrode; forming an oxide semiconductor layer on the gate insulating film; sequentially forming a lower data metal layer and an upper data metal layer on including the oxide semiconductor layer; forming an upper source pattern and an upper drain pattern by patterning the upper data metal layer by a wet etching; forming a lower source pattern and a lower drain pattern by patterning the lower data metal layer by a dry etching using the upper source pattern and the upper drain pattern as a mask to form a source electrode and a drain electrode; forming a first passivation film on the source and drain electrodes; performing a heat treatment on the oxide semiconductor layer; and forming a second passivation film on the first passivation film.

Abstract translation: 一种氧化物薄膜晶体管的制造方法，包括：在基板上形成栅电极; 形成栅极绝缘膜; 在栅极绝缘膜上形成氧化物半导体层; 在包括所述氧化物半导体层上顺序地形成下数据金属层和上数据金属层; 通过湿蚀刻图案化上数据金属层，形成上源图案和上漏图案; 通过使用上部源图案和上部排列图案作为掩模的干蚀刻图案化下部数据金属层来形成较低的源图案和较低的漏极图案，以形成源极和漏极; 在源极和漏极上形成第一钝化膜; 对氧化物半导体层进行热处理; 以及在所述第一钝化膜上形成第二钝化膜。