公开(公告)号：US10299391B2

公开(公告)日：2019-05-21

申请号：US15406610

申请日：2017-01-13

Applicant: LG Display Co., Ltd.

Inventor： Bong-Chul Kim ,  Jeong-Hun Kim

IPC: G09F9/30 ,  G03B21/58 ,  H05K5/00 ,  H05K1/02

Abstract: A rollable display device is provided. The rollable display device may include a flexible display panel, a body including a main roller, around which the flexible display panel is wound, and a link drive unit for moving the flexible display panel, and two link assemblies for connecting the link drive unit and the flexible display panel to each other. Each of the link assemblies may include an upper link frame, a lower link frame, a center link connector, and an elastic plate. The upper link frame and the lower link frame may be coupled to the center link connector independently of each other. The elastic plate may allow the lower link frame to operate later than the upper link frame.

公开(公告)号：US08937311B2

公开(公告)日：2015-01-20

申请号：US13717400

申请日：2012-12-17

Applicant: LG Display Co., Ltd.

Inventor： Hyun-Sik Seo ,  Bong-Chul Kim ,  Dae-Won Kim

IPC: H01L29/04 ,  H01L31/036 ,  H01L31/0376 ,  H01L31/20 ,  H01L29/786 ,  H01L29/66 ,  H01L29/45 ,  H01L29/49

CPC classification number: H01L29/786 ,  H01L29/45 ,  H01L29/4908 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/78693

Abstract: A method of fabricating a thin film transistor includes sequentially forming a first metal layer on a substrate and a second metal layer of copper on the first metal layer; performing a plasma process to form a copper nitride layer on the second metal layer; patterning the copper nitride layer, the second metal layer and the first metal layer to form a gate electrode; forming a first gate insulating layer of silicon nitride on the substrate including the gate electrode; forming a second gate insulating layer of silicon oxide on the first gate insulating layer; forming a semiconductor layer on the second gate insulating layer formed of an oxide semiconductor material; and forming a source electrode and a drain electrode on the semiconductor layer, the source electrode spaced apart from the drain electrode.

Abstract translation: 制造薄膜晶体管的方法包括在第一金属层上依次形成基板上的第一金属层和铜的第二金属层; 执行等离子体处理以在所述第二金属层上形成氮化铜层; 图案化所述氮化铜层，所述第二金属层和所述第一金属层以形成栅电极; 在包括所述栅电极的所述衬底上形成氮化硅的第一栅极绝缘层; 在所述第一栅极绝缘层上形成氧化硅的第二栅极绝缘层; 在由氧化物半导体材料形成的第二栅极绝缘层上形成半导体层; 以及在所述半导体层上形成源电极和漏电极，所述源电极与所述漏电极间隔开。

公开(公告)号：US09117846B2

公开(公告)日：2015-08-25

申请号：US14055553

申请日：2013-10-16

Applicant: LG Display Co., Ltd.

Inventor： Sang-Moo Park ,  Bong-Chul Kim ,  Chan-Ki Ha ,  Jin-Woo Kwon ,  Heung-Jo Lee

IPC: H01L29/66 ,  H01L29/786

CPC classification number: H01L29/66742 ,  H01L29/66969 ,  H01L29/7869

Abstract: A method of manufacturing an oxide thin film transistor includes forming a gate electrode on a substrate; forming a gate insulating film the gate electrode; forming an oxide semiconductor layer on the gate insulating film; sequentially forming a lower data metal layer and an upper data metal layer on including the oxide semiconductor layer; forming an upper source pattern and an upper drain pattern by patterning the upper data metal layer by a wet etching; forming a lower source pattern and a lower drain pattern by patterning the lower data metal layer by a dry etching using the upper source pattern and the upper drain pattern as a mask to form a source electrode and a drain electrode; forming a first passivation film on the source and drain electrodes; performing a heat treatment on the oxide semiconductor layer; and forming a second passivation film on the first passivation film.

Abstract translation: 一种氧化物薄膜晶体管的制造方法，包括：在基板上形成栅电极; 形成栅极绝缘膜; 在栅极绝缘膜上形成氧化物半导体层; 在包括所述氧化物半导体层上顺序地形成下数据金属层和上数据金属层; 通过湿蚀刻图案化上数据金属层，形成上源图案和上漏图案; 通过使用上部源图案和上部排列图案作为掩模的干蚀刻图案化下部数据金属层来形成较低的源图案和较低的漏极图案，以形成源极和漏极; 在源极和漏极上形成第一钝化膜; 对氧化物半导体层进行热处理; 以及在所述第一钝化膜上形成第二钝化膜。

公开(公告)号：US20140147967A1

公开(公告)日：2014-05-29

申请号：US14055553

申请日：2013-10-16

Applicant: LG DISPLAY CO., LTD.

Inventor： Sang-Moo Park ,  Bong-Chul Kim ,  Chan-Ki Ha ,  Jin-Woo Kwon ,  Heung-Jo Lee

IPC: H01L29/66

CPC classification number: H01L29/66742 ,  H01L29/66969 ,  H01L29/7869

Abstract: A method of manufacturing an oxide thin film transistor includes forming a gate electrode on a substrate; forming a gate insulating film the gate electrode; forming an oxide semiconductor layer on the gate insulating film; sequentially forming a lower data metal layer and an upper data metal layer on including the oxide semiconductor layer; forming an upper source pattern and an upper drain pattern by patterning the upper data metal layer by a wet etching; forming a lower source pattern and a lower drain pattern by patterning the lower data metal layer by a dry etching using the upper source pattern and the upper drain pattern as a mask to form a source electrode and a drain electrode; forming a first passivation film on the source and drain electrodes; performing a heat treatment on the oxide semiconductor layer; and forming a second passivation film on the first passivation film.

Abstract translation: 一种氧化物薄膜晶体管的制造方法，包括：在基板上形成栅电极; 形成栅极绝缘膜; 在栅极绝缘膜上形成氧化物半导体层; 在包括所述氧化物半导体层上顺序地形成下数据金属层和上数据金属层; 通过湿蚀刻图案化上数据金属层，形成上源图案和上漏图案; 通过使用上部源图案和上部排列图案作为掩模的干蚀刻图案化下部数据金属层来形成较低的源图案和较低的漏极图案，以形成源极和漏极; 在源极和漏极上形成第一钝化膜; 对氧化物半导体层进行热处理; 以及在所述第一钝化膜上形成第二钝化膜。

公开(公告)号：US20130207110A1

公开(公告)日：2013-08-15

申请号：US13717400

申请日：2012-12-17

Applicant: LG Display Co., Ltd.

Inventor： Hyun-Sik Seo ,  Bong-Chul Kim ,  Dae-Won Kim

IPC: H01L29/786 ,  H01L29/66

CPC classification number: H01L29/786 ,  H01L29/45 ,  H01L29/4908 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/78693

Abstract: A method of fabricating a thin film transistor includes sequentially forming a first metal layer on a substrate and a second metal layer of copper on the first metal layer; performing a plasma process to form a copper nitride layer on the second metal layer; patterning the copper nitride layer, the second metal layer and the first metal layer to form a gate electrode; forming a first gate insulating layer of silicon nitride on the substrate including the gate electrode; forming a second gate insulating layer of silicon oxide on the first gate insulating layer; forming a semiconductor layer on the second gate insulating layer formed of an oxide semiconductor material; and forming a source electrode and a drain electrode on the semiconductor layer, the source electrode spaced apart from the drain electrode.

Abstract translation: 制造薄膜晶体管的方法包括在第一金属层上依次形成基板上的第一金属层和铜的第二金属层; 执行等离子体处理以在所述第二金属层上形成氮化铜层; 图案化所述氮化铜层，所述第二金属层和所述第一金属层以形成栅电极; 在包括所述栅电极的所述衬底上形成氮化硅的第一栅极绝缘层; 在所述第一栅极绝缘层上形成氧化硅的第二栅极绝缘层; 在由氧化物半导体材料形成的第二栅极绝缘层上形成半导体层; 以及在所述半导体层上形成源电极和漏电极，所述源电极与所述漏电极间隔开。