公开(公告)号：US20130140572A1

公开(公告)日：2013-06-06

申请号：US13691143

申请日：2012-11-30

Applicant: LG Display Co., Ltd.

Inventor： JongWoo KIM ,  ChangHo OH ,  WonHyung YOO ,  SangYoon PAIK ,  JunKi KANG ,  JongHoon KIM

IPC: H01L33/16 ,  H01L33/00

CPC classification number: H01L27/124 ,  G02F1/13452 ,  H01L29/78669 ,  H01L29/78678 ,  H01L33/005 ,  H01L33/16

Abstract: An array substrate having a wiring of a pad region formed without an insulating film or without an insulating film and an organic film to reduce abnormal operations due to an increase in resistance caused by a contact margin at a high temperature, and a method for manufacturing the same are provided. The array substrate includes: an insulating substrate including a pad region and a thin film transistor (TFT) formation region; a first electrode layer formed in the pad region of the substrate; and a second electrode formed on the first electrode layer in an overlapping manner.

公开(公告)号：US20150021608A1

公开(公告)日：2015-01-22

申请号：US14510954

申请日：2014-10-09

Applicant: LG Display Co., Ltd.

Inventor： JongWoo KIM ,  ChangHo OH ,  WonHyung YOO ,  SangYoon PAIK ,  JunKi KANG ,  JongHoon KIM

IPC: H01L27/12 ,  H01L29/786

CPC classification number: H01L27/124 ,  G02F1/13452 ,  H01L29/78669 ,  H01L29/78678 ,  H01L33/005 ,  H01L33/16

Abstract: An array substrate having a wiring of a pad region formed without an insulating film or without an insulating film and an organic film to reduce abnormal operations due to an increase in resistance caused by a contact margin at a high temperature, and a method for manufacturing the same are provided. The array substrate includes: an insulating substrate including a pad region and a thin film transistor (TFT) formation region; a first electrode layer formed in the pad region of the substrate; and a second electrode formed on the first electrode layer in an overlapping manner.

Abstract translation: 具有不具有绝缘膜或不具有绝缘膜而形成的焊盘区域的布线的阵列基板和由于高温下的接触边缘引起的电阻增加而导致的异常操作的有机膜的制造方法 同样提供。 阵列基板包括：绝缘基板，包括焊盘区域和薄膜晶体管（TFT）形成区域; 形成在所述基板的所述焊盘区域中的第一电极层; 以及以重叠的方式形成在第一电极层上的第二电极。