公开(公告)号：US20240250212A1

公开(公告)日：2024-07-25

申请号：US18397741

申请日：2023-12-27

Applicant: LG Display Co., Ltd.

Inventor： Il-Soo KIM ,  Myungsoo HAN ,  Jung-Hun CHOI ,  Hyowon KWON ,  Dongwon YANG

IPC: H01L33/32 ,  H01L25/16

CPC classification number: H01L33/32 ,  H01L25/167

Abstract: Disclosed is a light-emitting device including a light-emitting structure including a first semiconductor layer, an active layer, and a second semiconductor layer; a first electrode connected to the first semiconductor layer; and a second electrode connected to the second semiconductor layer, wherein an energy bandgap of the first semiconductor layer decreases as the first semiconductor layer extends away from the active layer.

公开(公告)号：US20240079522A1

公开(公告)日：2024-03-07

申请号：US18234734

申请日：2023-08-16

Applicant: LG Display Co., Ltd.

Inventor： Dongwon YANG ,  Jung-Hun CHOI

IPC: H01L33/20 ,  H01L33/00 ,  H01L33/44

CPC classification number: H01L33/20 ,  H01L33/0075 ,  H01L33/44 ,  H01L33/32 ,  H01L2933/0025

Abstract: A light-emitting device and a method for manufacturing the light-emitting device are discussed. The light-emitting device can include a nitride semiconductor structure including a first semiconductor layer, an active layer and a second semiconductor layer; a passivation pattern disposed on opposing side surfaces of the nitride semiconductor structure; a first electrode electrically connected to the first semiconductor layer; and a second electrode electrically connected to the second semiconductor layer. An upper surface of the passivation pattern can be disposed to be substantially coplanar with an upper surface of the second semiconductor layer.