公开(公告)号：US20240204010A1

公开(公告)日：2024-06-20

申请号：US18239708

申请日：2023-08-29

Applicant: LG Display Co., Ltd.

Inventor： Soyang Choi ,  Youngjin Yi ,  JungJune Kim ,  Yubeen Lim

IPC: H01L27/12 ,  H01L23/552

CPC classification number: H01L27/1248 ,  H01L23/552 ,  H01L27/1225

Abstract: A thin film transistor substrate comprises a first thin film transistor on a base substrate, a second thin film transistor on the first thin film transistor, and a first protective pattern between the first thin film transistor and the second thin film transistor, wherein the first thin film transistor includes a first active layer on the base substrate, and a first gate electrode spaced apart from the first active layer, the second thin film transistor includes a second active layer on the base substrate, and a second gate electrode spaced apart from the second active layer, the first active layer includes a first channel portion that overlaps the first gate electrode, the second active layer includes a second channel portion that overlaps the second gate electrode, wherein the first protective pattern overlaps the second channel portion and covers the entire second channel portion on a plane.

公开(公告)号：US10811457B2

公开(公告)日：2020-10-20

申请号：US16121411

申请日：2018-09-04

Applicant: LG DISPLAY CO., LTD.

Inventor： Hyungil Na ,  Hanseok Lee ,  JungJune Kim ,  Seungyong Jung

IPC: H01L27/146 ,  H01L27/12 ,  H01L29/786 ,  G01T1/24 ,  G01T1/20

Abstract: An array substrate for a digital X-ray detector can include a base substrate; a thin film transistor disposed on the base substrate; a PIN diode including a lower electrode electrically connected to the thin film transistor, a first PIN layer disposed on the lower electrode, and an upper electrode disposed on the first PIN layer; a second PIN layer spaced apart from the PIN diode, the second PIN layer being disposed on the thin film transistor; and a bias electrode electrically connected to the upper electrode.

公开(公告)号：US10386503B2

公开(公告)日：2019-08-20

申请号：US16122097

申请日：2018-09-05

Applicant: LG Display Co., Ltd.

Inventor： Seungyong Jung ,  Hanseok Lee ,  Hyungil Na ,  JungJune Kim

IPC: G01T1/20 ,  G01T1/24 ,  H01L27/146 ,  H01L27/12

Abstract: An array substrate for a digital X-ray detector, a digital X-ray detector including the same, and a method for manufacturing the same are provided. A thin film transistor (TFT) array substrate for a digital X-ray detector includes: a base substrate, a thin film transistor over the base substrate, a lower electrode connected to the thin film transistor, a positive-intrinsic-negative (PIN) layer over the lower electrode, the PIN layer including: an N-type semiconductor layer, an intrinsic semiconductor layer, and a P-type semiconductor layer, a bias electrode over the PIN layer, and an upper electrode covering the PIN layer and the bias electrode.

公开(公告)号：US20250120290A1

公开(公告)日：2025-04-10

申请号：US18904592

申请日：2024-10-02

Applicant: LG Display Co., Ltd.

Inventor： Yubeen Lim ,  Soyang Choi ,  Hanseok Lee ,  JungJune Kim

IPC: H10K59/80 ,  H10K59/12 ,  H10K59/65 ,  H10K102/00

Abstract: A display apparatus with a moisture barrier structure and a method for manufacturing the display apparatus are disclosed. The display apparatus includes a first thin film transistor on a substrate, a separation layer disposed on the first thin film transistor and including an organic material, an inorganic insulating layer on the separation layer, a buffer layer on the inorganic insulating layer, a second thin film transistor on the buffer layer, and a display element connected to any one of the first thin film transistor and the second thin film transistor, wherein the separation layer has a recess, the recess has an opening in a direction toward the inorganic insulating layer, and the inorganic insulating layer is not disposed in the opening.

公开(公告)号：US10297622B2

公开(公告)日：2019-05-21

申请号：US15675220

申请日：2017-08-11

Applicant: LG DISPLAY CO., LTD.

Inventor： HyungIl Na ,  JungJune Kim

IPC: H01L27/12 ,  H01L27/32 ,  H01L29/49 ,  H01L29/423 ,  H01L29/786

Abstract: An OLED device includes a low-temperature poly-silicon (LTPS) thin-film transistor having a first channel layer, a first gate electrode, a first source electrode and a first drain electrode; an oxide semiconductor thin-film transistor having a second channel layer, a second gate electrode, a second source electrode and a second drain electrode; and a functional layer between the first channel layer and the first gate electrode. The second channel layer is in contact with an upper surface of the functional layer.