公开(公告)号：US10705229B2

公开(公告)日：2020-07-07

申请号：US16207580

申请日：2018-12-03

Applicant: LG Display Co., Ltd.

Inventor： Hyungil Na ,  Jungjune Kim ,  Hanseok Lee

IPC: G01T1/20 ,  H01L27/146

Abstract: An array substrate for a digital X-ray detector, a digital X-ray detector including the same, and a method for manufacturing the same are disclosed. The array substrate reduces a step difference of a PIN diode, removes a bent part from a lower part to reduce characteristic deterioration of the PIN diode, and increases the size of a formation region of the PIN diode to increase a fill factor. To this end, the array substrate allows a source region of an active layer included in a thin film transistor to be in surface contact with a lower electrode of the PIN diode, and disposes the lower electrode over a planarized source region or a base substrate, such that a step difference of the PIN diode is reduced and fill factor is improved.

公开(公告)号：US11209557B2

公开(公告)日：2021-12-28

申请号：US16895785

申请日：2020-06-08

Applicant: LG Display Co., Ltd.

Inventor： Hyungil Na ,  Jungjune Kim ,  Hanseok Lee

IPC: G01T1/20 ,  H01L27/146

Abstract: An array substrate for a digital X-ray detector, a digital X-ray detector including the same, and a method for manufacturing the same are disclosed. The array substrate reduces a step difference of a PIN diode, removes a bent part from a lower part to reduce characteristic deterioration of the PIN diode, and increases the size of a formation region of the PIN diode to increase a fill factor. To this end, the array substrate allows a source region of an active layer included in a thin film transistor to be in surface contact with a lower electrode of the PIN diode, and disposes the lower electrode over a planarized source region or a base substrate, such that a step difference of the PIN diode is reduced and fill factor is improved.

公开(公告)号：US11296139B2

公开(公告)日：2022-04-05

申请号：US16223886

申请日：2018-12-18

Applicant: LG Display Co., Ltd.

Inventor： Hyeji Jeon ,  Seungyong Jung ,  Hanseok Lee ,  Hyungil Na ,  Jungjune Kim

IPC: H01L27/146 ,  H01L31/105 ,  G01T1/20 ,  H01L31/0216 ,  H01L31/0224 ,  H01L31/0232

Abstract: An array substrate for a digital X-ray detector, and an X-ray detector including the same are disclosed, which reduce or minimize a contact resistance between a bias electrode and a PIN diode, and also improve a fill factor of the PIN diode. In the array substrate, a dual bias electrode in which a second bias electrode formed of a transparent conductive material is connected to a first bias electrode that is additionally connected to an upper electrode of the PIN diode, such that total resistance of the bias electrodes is reduced and a line width of the first bias electrode formed of a non-transparent material is reduced, resulting in an increased fill factor of the PIN diode.

公开(公告)号：US10707251B2

公开(公告)日：2020-07-07

申请号：US16197170

申请日：2018-11-20

Applicant: LG Display Co., Ltd.

Inventor： Hanseok Lee ,  Hyungil Na ,  Jungjune Kim ,  Seungyong Jung

IPC: H01L27/146 ,  G01T1/208 ,  H01L31/0224 ,  G01T1/20 ,  H01L31/105 ,  H01L27/12 ,  H01L31/117 ,  H01L31/0216 ,  H01L31/0232

Abstract: An array substrate for a digital X-ray detector and the digital X-ray detector including the same are disclosed. The array substrate effectively protects a PIN diode from external moisture or water, maximizes a light transmission region of a PIN diode, and reduces resistance by maximizing the region of a bias wiring. To this end, a closed-loop bias electrode formed to cover a circumferential surface of a PIN diode is used. In detail, the bias electrode includes a closed loop portion and a contact extension portion. The contact extension portion extends from one end of the closed loop portion so as to directly contact an upper electrode, and includes a hollow part therein.

公开(公告)号：US11199635B2

公开(公告)日：2021-12-14

申请号：US16886127

申请日：2020-05-28

Applicant: LG DISPLAY CO., LTD.

Inventor： Hyungil Na ,  Minseok Yun ,  Sangmo Byun

IPC: H01L27/146 ,  G01T1/20 ,  G01N23/04 ,  A61B6/00

Abstract: A digital X-ray detector, a digital X-ray detection device and a manufacturing method thereof are discussed. The digital X-ray detector includes a base substrate including an active region including a plurality of pixel regions, and a gate-in-panel (GIP) region as at least one side region to the active region; a PIN diode disposed in the active region and over the base substrate; a GIP driver disposed in the GIP region and over the base substrate; and a scintillator layer disposed over the PIN diode and the GIP driver so as to overlay the active region and at least a portion of the GIP region. In the present invention, damage of the driver due to X-ray is minimized while a bezel size is minimized.

公开(公告)号：US10811457B2

公开(公告)日：2020-10-20

申请号：US16121411

申请日：2018-09-04

Applicant: LG DISPLAY CO., LTD.

Inventor： Hyungil Na ,  Hanseok Lee ,  JungJune Kim ,  Seungyong Jung

IPC: H01L27/146 ,  H01L27/12 ,  H01L29/786 ,  G01T1/24 ,  G01T1/20

Abstract: An array substrate for a digital X-ray detector can include a base substrate; a thin film transistor disposed on the base substrate; a PIN diode including a lower electrode electrically connected to the thin film transistor, a first PIN layer disposed on the lower electrode, and an upper electrode disposed on the first PIN layer; a second PIN layer spaced apart from the PIN diode, the second PIN layer being disposed on the thin film transistor; and a bias electrode electrically connected to the upper electrode.

公开(公告)号：US10386503B2

公开(公告)日：2019-08-20

申请号：US16122097

申请日：2018-09-05

Applicant: LG Display Co., Ltd.

Inventor： Seungyong Jung ,  Hanseok Lee ,  Hyungil Na ,  JungJune Kim

IPC: G01T1/20 ,  G01T1/24 ,  H01L27/146 ,  H01L27/12

Abstract: An array substrate for a digital X-ray detector, a digital X-ray detector including the same, and a method for manufacturing the same are provided. A thin film transistor (TFT) array substrate for a digital X-ray detector includes: a base substrate, a thin film transistor over the base substrate, a lower electrode connected to the thin film transistor, a positive-intrinsic-negative (PIN) layer over the lower electrode, the PIN layer including: an N-type semiconductor layer, an intrinsic semiconductor layer, and a P-type semiconductor layer, a bias electrode over the PIN layer, and an upper electrode covering the PIN layer and the bias electrode.