公开(公告)号：US20230081823A1

公开(公告)日：2023-03-16

申请号：US17902655

申请日：2022-09-02

Applicant: LG Display Co., Ltd.

Inventor： SoYoung NOH ,  Seunghyo KO ,  KyeongJu MOON

IPC: H01L27/12

Abstract: A thin film transistor substrate can include a thin film transistor on a base substrate, and a capacitor connected to the thin film transistor. The thin film transistor can include an active layer on the base substrate, and a gate electrode spaced apart from the active layer to at least partially overlap the active layer. The capacitor can include a first capacitor electrode disposed on a same layer as the active layer of the thin film transistor, and a second capacitor electrode disposed on a same layer as the gate electrode and overlapping with the first capacitor electrode. The first capacitor electrode can include an active material layer made of a same material as the active layer of the thin film transistor, and a metal-containing layer disposed on the active material layer. The metal-containing layer can include a metal different than the active material layer and can absorb hydrogen.

公开(公告)号：US20230070485A1

公开(公告)日：2023-03-09

申请号：US17897803

申请日：2022-08-29

Applicant: LG DISPLAY CO., LTD.

Inventor： KyeongJu MOON ,  Seunghyo KO ,  Nuri ON

IPC: H01L29/786 ,  H01L29/66

Abstract: A thin film transistor includes an active layer of an oxide semiconductor, a gate electrode provided on or under the active layer while being spaced apart from the active layer and overlapping with at least a portion of the active layer, and a gate insulating film between the active layer and the gate electrode, wherein the active layer includes copper (Cu).