Thin film transistor substrate and method for fabricating the same
    2.
    发明授权
    Thin film transistor substrate and method for fabricating the same 有权
    薄膜晶体管基板及其制造方法

    公开(公告)号:US08969875B2

    公开(公告)日:2015-03-03

    申请号:US13654023

    申请日:2012-10-17

    Inventor: Seung Hee Nam

    CPC classification number: H01L27/124 H01L27/12

    Abstract: The present invention relates to a thin film transistor substrate and method for fabricating the same which can secure an alignment margin and reduce the number of mask steps. A thin transistor substrate according to the present invention includes a gate line and a data line crossing each other to define a pixel, a gate metal pattern under the data line, a thin film transistor having a gate electrode, a source electrode and a drain electrode in the pixel, and a pixel electrode connected to the drain electrode of the thin film transistor by a connection electrode, wherein the data line has a plurality of first slits to disconnect the gate metal pattern from the gate line.

    Abstract translation: 薄膜晶体管基板及其制造方法技术领域本发明涉及薄膜晶体管基板及其制造方法,其可以确保取向余量并减少掩模台阶数。 根据本发明的薄晶体管衬底包括栅极线和彼此交叉以限定像素的数据线,数据线下方的栅极金属图案,具有栅电极,源电极和漏电极的薄膜晶体管 以及通过连接电极连接到薄膜晶体管的漏电极的像素电极,其中数据线具有多个第一狭缝,以将栅极金属图案与栅极线断开。

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