公开(公告)号：US20180204962A1

公开(公告)日：2018-07-19

申请号：US15858798

申请日：2017-12-29

Applicant: LG ELECTRONICS INC.

Inventor： Jaewoo CHOI ,  Chungyi KIM ,  Joohyun KOH

IPC: H01L31/0224 ,  H01L31/18 ,  H01L31/0216

CPC classification number: H01L31/022425 ,  H01L31/02168 ,  H01L31/1868 ,  Y02E10/50 ,  Y02P70/521

Abstract: Disclosed is a solar cell including: a semiconductor substrate; a conductive region on or at the semiconductor substrate; an electrode electrically connected to the conductive region; and a passivation layer on a light incident surface of the semiconductor substrate. The passivation layer includes a first layer in contact with the light incident surface of the semiconductor substrate and formed of silicon oxynitride for ultraviolet stability. The first layer includes a plurality of phases of the silicon oxynitride, and the plurality of phases are formed of the silicon oxynitride having different compositions.

公开(公告)号：US20190296163A1

公开(公告)日：2019-09-26

申请号：US16430018

申请日：2019-06-03

Applicant: LG ELECTRONICS INC.

Inventor： Jaewoo CHOI ,  Chungyi KIM ,  Joohyun KOH

IPC: H01L31/0224 ,  H01L31/18 ,  H01L31/0216

Abstract: A solar cell includes a semiconductor substrate; a conductive region on or at the semiconductor substrate; an electrode electrically connected to the conductive region; and a silicon oxynitride layer on a light incident surface of the semiconductor substrate, wherein the silicon oxynitride layer comprises a first phase region having a first oxygen content and a first nitrogen content; a second phase region having a second oxygen content higher than the first oxygen content and a second nitrogen content lower than the first nitrogen content; and a third phase region having a third oxygen content lower than the second oxygen content and a third nitrogen content lower than the second nitrogen content.

公开(公告)号：US20200343391A1

公开(公告)日：2020-10-29

申请号：US16837755

申请日：2020-04-01

Applicant: LG ELECTRONICS INC.

Inventor： Jaewoo CHOI ,  Hanjong YU ,  Hyoungkyun KONG

IPC: H01L31/0216

Abstract: Provided are a solar cell and a manufacturing method thereof. The solar cell includes a semiconductor substrate, a conductivity type region positioned at or on the semiconductor substrate and including impurities, an electrode electrically connected to the conductivity type region, and an insulating layer positioned on at least one of one surface or the opposite surface of the semiconductor substrate, wherein the insulating layer includes: a first layer positioned on the semiconductor substrate and including an oxygen (O)-based material, a second layer positioned on the first layer, an anti-reflective layer positioned on the second layer, and a third layer positioned on the anti-reflective layer and including a silicon (Si)-based material and a carbon (C)-based material, wherein a bandgap of the first layer is formed to be higher than a bandgap of each of the second layer, the anti-reflective layer, and the third layer.

公开(公告)号：US20180083149A1

公开(公告)日：2018-03-22

申请号：US15600042

申请日：2017-05-19

Applicant: LG ELECTRONICS INC.

Inventor： Chungyi KIM ,  Youngsung YANG ,  Jaewoo CHOI ,  Mihee HEO

IPC: H01L31/0368 ,  H01L31/0216 ,  H01L31/18

Abstract: Disclosed is a solar cell including a control passivation film on one surface of a semiconductor substrate, and being formed of a dielectric material; and a semiconductor layer on the control passivation film, wherein the semiconductor layer including a first conductive region having a first conductive type and a second conductive region having a second conductive type opposite to the first conductive type. The semiconductor substrate includes a diffusion region including at least one of a first diffusion region and a second diffusion region adjacent to the control passivation film, wherein the first diffusion region being locally formed to correspond to the first conductive region and having a doping concentration lower than a doping concentration of the first conductive region, wherein the second diffusion region being locally formed to correspond to the second conductive region and having a doping concentration lower than a doping concentration of the second conductive region.