公开(公告)号：US20240395977A1

公开(公告)日：2024-11-28

申请号：US18591736

申请日：2024-02-29

Applicant: LG ELECTRONICS INC.

Inventor： Jina JEON ,  Hyosang YU ,  Hyungjo PARK ,  Donghun KANG ,  Junseok SEONG ,  Hajong BONG

IPC: H01L33/46

Abstract: A semiconductor light emitting device including a light emitting structure and a reflective contact layer disposed below the light emitting structure. Further, the reflective contact layer includes a plurality of ohmic contact areas contacting a first conductivity-type semiconductor layer of the light emitting structure in which a first ohmic contact area has a different size than a second ohmic contact area included in the plurality of ohmic contact areas; and a first reflective layer comprising an AgAu alloy and covering the plurality of ohmic contact areas.