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公开(公告)号：US20220336423A1
公开(公告)日：2022-10-20
申请号：US17633100
申请日：2019-08-07
Applicant: LG ELECTRONICS INC.
Inventor： Jungsub KIM , Yongdae KIM , Yoonchul KIM , Changseo PARK , Jina JEON
IPC: H01L25/075 , H01L23/00 , H01L33/62
Abstract: Disclosed in the present specification are a substrate for transferring, with high reliability, a semiconductor light emitting element, and a method for manufacturing a display device by using same. Particularly, when a semiconductor light emitting element is self-assembled on an assembly substrate by using an electromagnetic field, an assembly groove in which a semiconductor light emitting element for alignment is assembled is formed in the assembly substrate. The semiconductor light emitting element for alignment, assembled in the assembly groove, is used for alignment in a step of being transferred to a final wiring substrate. Unlike conventional alignment keys, the semiconductor light emitting element for alignment reflects an alignment error of semiconductor light emitting elements that occurs during a transfer process after assembly. Therefore, when semiconductor light emitting elements are transferred to a wiring substrate on the basis of the semiconductor light emitting element for alignment, transfer accuracy can be improved.
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公开(公告)号：US20240395977A1
公开(公告)日：2024-11-28
申请号：US18591736
申请日：2024-02-29
Applicant: LG ELECTRONICS INC.
Inventor： Jina JEON , Hyosang YU , Hyungjo PARK , Donghun KANG , Junseok SEONG , Hajong BONG
IPC: H01L33/46
Abstract: A semiconductor light emitting device including a light emitting structure and a reflective contact layer disposed below the light emitting structure. Further, the reflective contact layer includes a plurality of ohmic contact areas contacting a first conductivity-type semiconductor layer of the light emitting structure in which a first ohmic contact area has a different size than a second ohmic contact area included in the plurality of ohmic contact areas; and a first reflective layer comprising an AgAu alloy and covering the plurality of ohmic contact areas.
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公开(公告)号：US20230117219A1
公开(公告)日：2023-04-20
申请号：US18083152
申请日：2022-12-16
Applicant: LG ELECTRONICS INC.
Inventor： Kyoungtae WI , Sunghyun MOON , Jina JEON
Abstract: A display device can include a wiring substrate including a first electrode, a plurality of semiconductor light-emitting elements electrically connected to the first electrode, a conductive adhesive layer on the wiring substrate and around the plurality of semiconductor light-emitting elements, an upper layer on one surface of the conductive adhesive layer and including a plurality of through holes corresponding to the plurality of semiconductor light-emitting elements, respectively, and a second electrode on the upper layer and electrically connected to the plurality of semiconductor light-emitting elements. The upper layer can include a thermosetting adhesive.
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公开(公告)号：US20210313490A1
公开(公告)日：2021-10-07
申请号：US17266406
申请日：2018-08-29
Applicant: LG ELECTRONICS INC.
Inventor： Jungsub KIM , Sunghyun MOON , Younghak CHANG , Jina JEON
IPC: H01L33/38 , H01L25/075 , H01L33/40 , H01L33/44
Abstract: Discussed is a display device having a plurality of semiconductor light-emitting diodes. At least one of the semiconductor light-emitting diodes has a first conductive electrode and a second conductive electrode; a first conductive semiconductor layer on which the first conductive electrode is disposed; a second conductive semiconductor layer that overlaps with the first conductive semiconductor layer, and the second conductive electrode being disposed on the second conductive semiconductor layer; an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer; an undoped semiconductor layer disposed on the second conductive semiconductor layer; and protrusions formed of a porous material allowing electropolishing, and on the undoped semiconductor layer.
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Patent Agency Ranking
5.发明申请公开(公告)号：US20160300745A1
公开(公告)日：2016-10-13
申请号：US14808009
申请日：2015-07-24
Applicant: LG Electronics Inc.
Inventor： Younghak CHANG , Jina JEON
IPC: H01L21/683 , H02N13/00 , H01L25/075 , H01L33/62 , H01L33/24 , H01L33/38
Abstract: A method of transferring a semiconductor light emitting device, and which includes positioning a transfer head having a head electrode facing a semiconductor light emitting device having an undoped semiconductor layer, the semiconductor light emitting device arranged on a carrier substrate; moving the head electrode of the transfer head close to the undoped semiconductor layer of the semiconductor light emitting device; applying a voltage to the head electrode to provide an attachment force to the undoped semiconductor layer by an electrostatic force; and picking-up the semiconductor light emitting device and transferring the semiconductor light emitting device to base substrate.
Abstract translation: 一种转印半导体发光器件的方法，其包括定位具有面向具有未掺杂半导体层的半导体发光器件的头电极的转印头，所述半导体发光器件布置在载体衬底上; 移动所述转印头的头电极靠近所述半导体发光器件的未掺杂的半导体层; 向头电极施加电压，通过静电力向未掺杂的半导体层提供附着力; 并且拾取半导体发光器件并将半导体发光器件传送到基底。
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公开(公告)号：US20220416125A1
公开(公告)日：2022-12-29
申请号：US17763050
申请日：2019-09-25
Applicant: LG ELECTRONICS INC.
Inventor： Jina JEON , Yongdae KIM , Myoungsoo KIM , Yoonchul KIM , Jungsub KIM , Sunghyun MOON , Yeonhong JUNG
IPC: H01L33/38 , H01L33/00 , H01L33/62 , H01L25/075
Abstract: Discussed is a manufacturing method of a display apparatus, and the display apparatus. The display includes a substrate, an adhesive layer located on the substrate and including protruding portions, semiconductor light-emitting diodes located on the adhesive layer, an insulating layer located on the semiconductor light-emitting diodes and the adhesive layer, and wiring electrodes electrically connected to the semiconductor light-emitting diodes, wherein the protruding portions of the adhesive layer are positioned at regular intervals to correspond to the shapes of the contact surfaces of the semiconductor light-emitting diodes in contact with the adhesive layer.
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7.发明申请公开(公告)号：US20200373473A1
公开(公告)日：2020-11-26
申请号：US16965235
申请日：2018-01-29
Applicant: LG ELECTRONICS INC.
Inventor： Kyoungtae WI , Sunghyun MOON , Jina JEON
Abstract: The present invention relates to a method for manufacturing a display device using semiconductor light-emitting elements and a display device. The method for manufacturing a display device according to the present invention comprises the steps of: transferring semiconductor light-emitting elements provided on a growth substrate to an adhesive layer of a temporary substrate; curing the adhesive layer of the temporary substrate; aligning the temporary substrate with a wiring substrate having a wiring electrode and a conductive adhesive layer; compressing the temporary substrate to the wiring substrate so that the semiconductor light-emitting elements bond to the wiring substrate together with the adhesive layer of the temporary substrate, and then removing the temporary substrate; and removing at least a part of the adhesive layer to expose the semiconductor light-emitting elements to the outside, and depositing electrodes on the semiconductor light-emitting elements.
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公开(公告)号：US20210320146A1
公开(公告)日：2021-10-14
申请号：US17259084
申请日：2018-08-29
Applicant: LG ELECTRONICS INC.
Inventor： Jungsub KIM , Sunghyun MOON , Younghak CHANG , Jina JEON
Abstract: A display device is discussed. The Display device includes a plurality of semiconductor light-emitting elements on a substrate, wherein the substrate includes: a base substrate; an insulating layer on the base substrate; and pads protruding farther than the insulating layer and enabling the semiconductor light-emitting elements to in contact, wherein the insulating layer includes inorganic particles, and at least a portion of some of the inorganic particles is formed so as to protrude from a surface of the insulating layer.
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公开(公告)号：US20180277524A1
公开(公告)日：2018-09-27
申请号：US15754900
申请日：2016-08-26
Applicant: LG ELECTRONICS INC.
Inventor： Sunghyun MOON , Younghak CHANG , Jina JEON , Seonhoo KIM , Youngjoo YEE , Hwankuk YUH
IPC: H01L25/075 , H01L33/62 , H01L33/22
CPC classification number: H01L25/0753 , H01L21/677 , H01L21/6835 , H01L33/0095 , H01L33/22 , H01L33/62 , H01L2221/68354 , H01L2933/0033 , H01L2933/0066
Abstract: The present invention relates to a display device and, more particularly, to a transfer head for a semiconductor light-emitting device applied to the display device and a method for transferring a semiconductor light-emitting device. The transfer head for a semiconductor light-emitting device, according to the present invention, comprises: a base substrate; and an electrode unit disposed on the base substrate to generate an electrostatic force by charging an un-doped semiconductor layer of the semiconductor light-emitting device with electric charges, wherein the base substrate and the electrode unit are formed of light-transmitting materials so that at least a part of the semiconductor light-emitting device is viewable through the base substrate and the electrode unit in sequence.
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