公开(公告)号：US20240274751A1

公开(公告)日：2024-08-15

申请号：US18566943

申请日：2021-06-07

Applicant: LG ELECTRONICS INC.

Inventor： Dongwook KIM ,  Sukkoo JUNG ,  Daesung KANG ,  Donghun KANG

IPC: H01L33/12 ,  H01L33/00 ,  H01L33/06 ,  H01L33/30

CPC classification number: H01L33/12 ,  H01L33/0062 ,  H01L33/06 ,  H01L33/30

Abstract: The present disclosure relates to a red-light-emitting semiconductor light-emitting device, which is applicable to a technical field related to a display device, for example, can be used in a display device, and to a method for manufacturing same. The present disclosure may comprise: a substrate; a buffer layer located on the substrate; a first conductive contact layer located on the buffer layer; a first conductive constraint layer located on the first conductive contact layer; an active layer located on the first conductive constraint layer; a second conductive constraint layer located on the active layer; and a current concentration structure located on at least one side of between the first conductive contact layer and the first conductive constraint layer and between the second conductive contact layer and the second conductive constraint layer. In this case, the current concentration structure may include: a lattice strain induction layer; and a high resistance layer which is in contact with the lattice strain induction layer, separated from the lattice strain induction layer, and distributed to form a current barrier.

公开(公告)号：US20240395977A1

公开(公告)日：2024-11-28

申请号：US18591736

申请日：2024-02-29

Applicant: LG ELECTRONICS INC.

Inventor： Jina JEON ,  Hyosang YU ,  Hyungjo PARK ,  Donghun KANG ,  Junseok SEONG ,  Hajong BONG

IPC: H01L33/46

Abstract: A semiconductor light emitting device including a light emitting structure and a reflective contact layer disposed below the light emitting structure. Further, the reflective contact layer includes a plurality of ohmic contact areas contacting a first conductivity-type semiconductor layer of the light emitting structure in which a first ohmic contact area has a different size than a second ohmic contact area included in the plurality of ohmic contact areas; and a first reflective layer comprising an AgAu alloy and covering the plurality of ohmic contact areas.