公开(公告)号：US08841179B2

公开(公告)日：2014-09-23

申请号：US13673436

申请日：2012-11-09

Applicant: LG Electronics Inc.

Inventor： Seongmoo Cho ,  Kwangchoong Kim ,  Eujin Hwang ,  Taehoon Jang

IPC: H01L21/338 ,  H01L29/15 ,  H01L29/66 ,  H01L29/10 ,  H01L29/778 ,  H01L21/205 ,  H01L29/20

CPC classification number: H01L29/7783 ,  H01L21/2056 ,  H01L29/0619 ,  H01L29/1054 ,  H01L29/2003 ,  H01L29/432 ,  H01L29/66462 ,  H01L29/66522 ,  H01L29/7786

Abstract: A semiconductor device including a first GaN layer, an AlGaN layer, a second GaN layer, a gate electrode, a source electrode, and a drain electrode sequentially stacked on a substrate, capable of improving a leakage current and a breakdown voltage characteristics generated in the gate electrode by locally forming a p type GaN layer on the AlGaN layer, and a manufacturing method thereof, and a manufacturing method thereof are provided. The semiconductor device includes: a substrate, a first GaN layer formed on the substrate, an AlGaN layer formed on the first GaN layer, a second GaN layer formed on the AlGaN layer and including a p type GaN layer, and a gate electrode formed on the second GaN layer, wherein the p type GaN layer may be in contact with a portion of the gate electrode.

Abstract translation: 一种半导体器件，包括依次层叠在基板上的第一GaN层，AlGaN层，第二GaN层，栅极电极，源极电极和漏极电极，能够提高漏电流和在 提供了在AlGaN层上局部形成p型GaN层的栅电极及其制造方法及其制造方法。 半导体器件包括：衬底，在衬底上形成的第一GaN层，形成在第一GaN层上的AlGaN层，形成在AlGaN层上并包括ap型GaN层的第二GaN层和形成在第一GaN层上的栅电极 第二GaN层，其中p型GaN层可以与栅电极的一部分接触。