公开(公告)号：US09252220B2

公开(公告)日：2016-02-02

申请号：US14589730

申请日：2015-01-05

Applicant: LG ELECTRONICS INC.

Inventor： Junho Kim ,  Seongmoo Cho ,  Taehoon Jang ,  Eujin Hwang ,  Jaemoo Kim

IPC: H01L29/20 ,  H01L29/36 ,  H01L29/205 ,  H01L29/778 ,  H01L21/02 ,  H01L29/201 ,  H01L29/207

CPC classification number: H01L29/205 ,  H01L21/02458 ,  H01L21/02488 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02631 ,  H01L29/2003 ,  H01L29/201 ,  H01L29/207 ,  H01L29/778 ,  H01L29/7783 ,  H01L29/7786

Abstract: A nitride semiconductor power device includes an AlGaN multilayer, which has changeable Al composition along a depositing direction, and SixNy layer, so as to minimize an increase in a leakage current and a decrease in a breakdown voltage, which are caused while fabricating a heterojunction type HFET device. A semiconductor device includes a buffer layer, an AlGaN multilayer formed on the buffer layer, a GaN channel layer formed on the AlGaN multilayer, and an AlGaN barrier layer formed on the AlGaN multilayer, wherein aluminum (Al) composition of the AlGaN multilayer changes along a direction that the AlGaN multilayer is deposited.

Abstract translation: 氮化物半导体功率器件包括沿着沉积方向具有可变的Al组成的AlGaN多层和SixNy层，以便最小化在制造异质结型时产生的漏电流的增加和击穿电压的降低 HFET器件。 半导体器件包括缓冲层，形成在缓冲层上的AlGaN多层，形成在AlGaN多层上的GaN沟道层和形成在AlGaN多层上的AlGaN阻挡层，其中AlGaN多层的铝（Al）组成沿着 沉积AlGaN多层的方向。

公开(公告)号：US20140054600A1

公开(公告)日：2014-02-27

申请号：US13947641

申请日：2013-07-22

Applicant: LG Electronics Inc.

Inventor： Seongmoo Cho ,  Taehoon Jang

IPC: H01L29/78 ,  H01L29/24 ,  H01L29/205

CPC classification number: H01L29/78 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/24 ,  H01L29/41725 ,  H01L29/42316 ,  H01L29/66462 ,  H01L29/7786

Abstract: This specification is directed to a semiconductor device capable of reducing a leakage current by forming a first GaN layer including a plurality of GaN layers and FexNy layers interposed between the plurality of GaN layers, in a semiconductor device having the first GaN layer, an AlGaN layer, a second GaN layer, a gate electrode, a source electrode and a drain electrode which are deposited in a sequential manner, and a fabricating method thereof.To this end, a semiconductor device according to one exemplary embodiment includes a first GaN layer, an AlGaN layer on the first GaN layer, a second GaN layer on the AlGaN layer, and a source electrode, a drain electrode and a gate electrode formed on a partial area of the second GaN layer, wherein the first GaN layer comprises a plurality of GaN layers and FexNy layers interposed between the plurality of GaN layers.

Abstract translation: 本说明书涉及一种能够通过在具有第一GaN层的半导体器件中形成包括多个GaN层和介于多个GaN层之间的FexNy层的第一GaN层来减少漏电流的半导体器件，AlGaN层 ，第二GaN层，栅极电极，源极电极和漏极电极及其制造方法。 为此，根据一个示例性实施例的半导体器件包括第一GaN层，第一GaN层上的AlGaN层，AlGaN层上的第二GaN层，以及源电极，漏电极和栅电极， 所述第二GaN层的部分区域，其中所述第一GaN层包括插入在所述多个GaN层之间的多个GaN层和FexNy层。

公开(公告)号：US09276103B2

公开(公告)日：2016-03-01

申请号：US13947641

申请日：2013-07-22

Applicant: LG Electronics Inc.

Inventor： Seongmoo Cho ,  Taehoon Jang

IPC: H01L29/78 ,  H01L29/417 ,  H01L29/423 ,  H01L29/66 ,  H01L29/205 ,  H01L29/24 ,  H01L29/778 ,  H01L29/20

CPC classification number: H01L29/78 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/24 ,  H01L29/41725 ,  H01L29/42316 ,  H01L29/66462 ,  H01L29/7786

Abstract: This specification is directed to a semiconductor device capable of reducing a leakage current by forming a first GaN layer including a plurality of GaN layers and FexNy layers interposed between the plurality of GaN layers, in a semiconductor device having the first GaN layer, an AlGaN layer, a second GaN layer, a gate electrode, a source electrode and a drain electrode which are deposited in a sequential manner, and a fabricating method thereof.To this end, a semiconductor device according to one exemplary embodiment includes a first GaN layer, an AlGaN layer on the first GaN layer, a second GaN layer on the AlGaN layer, and a source electrode, a drain electrode and a gate electrode formed on a portion of the second GaN layer, wherein the first GaN layer comprises a plurality of GaN layers and FexNy layers interposed between the plurality of GaN layers.

Abstract translation: 本说明书涉及一种能够通过在具有第一GaN层的半导体器件中形成包括多个GaN层和介于多个GaN层之间的FexNy层的第一GaN层来减少漏电流的半导体器件，AlGaN层 ，第二GaN层，栅极电极，源极电极和漏极电极及其制造方法。 为此，根据一个示例性实施例的半导体器件包括第一GaN层，第一GaN层上的AlGaN层，AlGaN层上的第二GaN层，以及源电极，漏电极和栅电极， 所述第二GaN层的一部分，其中所述第一GaN层包括插入在所述多个GaN层之间的多个GaN层和FexNy层。

公开(公告)号：US09224846B2

公开(公告)日：2015-12-29

申请号：US14251717

申请日：2014-04-14

Applicant: LG ELECTRONICS INC.

Inventor： Jonghoon Shin ,  Woongsun Kim ,  Taehoon Jang

IPC: H01L21/338 ,  H01L29/778 ,  H01L29/66 ,  H01L21/02 ,  H01L29/20

CPC classification number: H01L29/7783 ,  H01L21/02241 ,  H01L29/2003 ,  H01L29/66462 ,  H01L29/7787

Abstract: This specification relates to an enhancement-type semiconductor device having a passivation layer formed using a photoelectrochemical (PEC) method, and a fabricating method thereof.To this end, a semiconductor device according to one exemplary embodiment includes a GaN layer, an AlGaN layer formed on the GaN layer, a p-GaN layer formed on the AlGaN layer, a gate electrode formed on the p-GaN layer, a source electrode and a drain electrode formed on a partial region of the AlGaN layer, and a passivation layer formed on a partial region of the AlGaN layer, the passivation layer formed between the source electrode and the gate electrode or between the gate electrode and the drain electrode, wherein the passivation layer is formed in a manner of oxidizing a part of the p-GaN layer.

Abstract translation: 本说明书涉及具有使用光电化学（PEC）方法形成的钝化层的增强型半导体器件及其制造方法。 为此，根据一个示例性实施例的半导体器件包括GaN层，形成在GaN层上的AlGaN层，在AlGaN层上形成的p-GaN层，形成在p-GaN层上的栅电极，源极 电极和形成在AlGaN层的部分区域上的漏电极，以及形成在所述AlGaN层的部分区域上的钝化层，所述钝化层形成在所述源电极和所述栅电极之间或所述栅电极与所述漏电极之间 ，其中所述钝化层以氧化所述p-GaN层的一部分的方式形成。

公开(公告)号：US08841179B2

公开(公告)日：2014-09-23

申请号：US13673436

申请日：2012-11-09

Applicant: LG Electronics Inc.

Inventor： Seongmoo Cho ,  Kwangchoong Kim ,  Eujin Hwang ,  Taehoon Jang

IPC: H01L21/338 ,  H01L29/15 ,  H01L29/66 ,  H01L29/10 ,  H01L29/778 ,  H01L21/205 ,  H01L29/20

CPC classification number: H01L29/7783 ,  H01L21/2056 ,  H01L29/0619 ,  H01L29/1054 ,  H01L29/2003 ,  H01L29/432 ,  H01L29/66462 ,  H01L29/66522 ,  H01L29/7786

Abstract: A semiconductor device including a first GaN layer, an AlGaN layer, a second GaN layer, a gate electrode, a source electrode, and a drain electrode sequentially stacked on a substrate, capable of improving a leakage current and a breakdown voltage characteristics generated in the gate electrode by locally forming a p type GaN layer on the AlGaN layer, and a manufacturing method thereof, and a manufacturing method thereof are provided. The semiconductor device includes: a substrate, a first GaN layer formed on the substrate, an AlGaN layer formed on the first GaN layer, a second GaN layer formed on the AlGaN layer and including a p type GaN layer, and a gate electrode formed on the second GaN layer, wherein the p type GaN layer may be in contact with a portion of the gate electrode.

Abstract translation: 一种半导体器件，包括依次层叠在基板上的第一GaN层，AlGaN层，第二GaN层，栅极电极，源极电极和漏极电极，能够提高漏电流和在 提供了在AlGaN层上局部形成p型GaN层的栅电极及其制造方法及其制造方法。 半导体器件包括：衬底，在衬底上形成的第一GaN层，形成在第一GaN层上的AlGaN层，形成在AlGaN层上并包括ap型GaN层的第二GaN层和形成在第一GaN层上的栅电极 第二GaN层，其中p型GaN层可以与栅电极的一部分接触。